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Germanium ions were implanted into SiO2 films which were thermally grown on crystalline Si at an energy of 60 keV and with doses of 1×1015 and 1×1016 cm-2.Under an ultraviolet excitation of ~5.0 eV,the implanted f ilms annealed at various temperatures exhibit intense violet luminescence with a peak at 396 nm.It is ascribed to the T1→S0 transition in GeO,which was formed during implantation and annealing process. 相似文献
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嵌入硅基多孔氧化铝中的荧光染料的发光性质研究 总被引:3,自引:0,他引:3
3种不同的荧光染料被分别嵌入硅基多孔氧化铝模板中,并且在室温下得到了蓝光、绿光和红光波长的荧光发射.实验中同时观测到上述荧光光谱的蓝移现象.研究结果表明,荧光染料沉积在不同的模板(如硅基多孔氧化铝、多孔硅)中,其相互作用的机理是不同的.模板发光机制的差异将直接影响荧光染料的发光性质. 相似文献
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