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11.
We report on a forest-like-to-desert-like pattern
evolution in the growth of an organic thin film observed by using an
atomic force microscope. We use a modified diffusion limited
aggregation model to simulate the growth process and are able to
reproduce the experimental patterns. The energy of electric dipole
interaction is calculated and determined to be the driving force for
the pattern formation and evolution. Based on these results, single
crystalline films are obtained by enhancing the electric dipole
interaction while limiting effects of other growth
parameters. 相似文献
12.
Large scale, high density boron carbide nanowires have been synthesized by using an improved carbothermal reduction method with B/B203/C powder precursors under an argon flow at 1100℃. The boron carbide nanowires are 5-10 μm in length and 80-100 nm in diameter. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) characterizations show that the boron carbide nanowire has a B4C rhombohedral structure with good crystallization. The Raman spectrum of the as-grown boron carbide nanowires is consistent with that of a B4C structure consisting of B11C icosahedra and C-B-C chains. The room temperature photoluminescence spectrum of the boron carbide nanowires exhibits a visible range of emission centred at 638 nm. 相似文献
13.
Monolayer MoS2 of high mobility grown on SiO2 substrate by two-step chemical vapor deposition
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Jia-Jun Ma 《中国物理 B》2022,31(8):88105-088105
We report a novel two-step ambient pressure chemical vapor deposition (CVD) pathway to grow high-quality MoS2 monolayer on the SiO2 substrate with large crystal size up to 110 μm. The large specific surface area of the pre-synthesized MoO3 flakes on the mica substrate compared to MoO3 powder could dramatically reduce the consumption of the Mo source. The electronic information inferred from the four-probe scanning tunneling microscope (4P-STM) image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements. Furthermore, the direct van der Pauw transport also confirms its relatively high carrier mobility. Our study provides a reliable method to synthesize high-quality MoS2 monolayer, which is confirmed by the direct 4P-STM measurement results. Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides (TMDs) on the SiO2 substrate and is essential to further development of the TMDs-related integrated devices. 相似文献
14.
Bulk SnSe is an excellent thermoelectrical material with the highest figure-of-merit value of ZT=2.&making it promising in applications.Temperature-dependent electrical and thermoelectrical properties of SnSe nanoplates are studied at low temperature.Conductivity drops and rises again as temperature is lowered.The Seebeck coefficient is positive at room temperature and becomes negative at low temperature.The change of the sign of the Seebeck coefficient indicates influence of bipolar transport of the semiconductive SnSe nanoplate.The bipolar transport is caused by the Fermi energy changing with temperature due to different contributions from donors and acceptors at different temperatures. 相似文献