Clock recovery from NRZ data at 10 Gb/s using SOA loop mirror and mode-locked fiber ring laser based on SOA

All-optical clock recovery from non-return-to-zero (NRZ) data using an semiconductor optical amplifier (SOA) loop mirror and a mode-locked SOA fiber laser is firstly schematically explained and experimentally demonstrated at 10 Gb/s. Furthermore, the pulse quality of the recovered clock is effectively improved by using a continuous-wave (CW) assist light in the gain region of SOA, through which the amplitude modulation is reduced from 57.2% to 8.47%. This scheme is a promising method for clock recovery from NRZ data in the future all-optical communication networks.     

Cross section of the impact single ionization of B2＋ by H＋

The ionization process of B2+ by H+ impact is studied using the continuum-distorted-wave eikonal-initial-state (CDW-EIS) method and the modified free electron peak approximation (M-FEPA), respectively. Total, single-, and double- differential cross sections from 1s and 2s orbitals are presented for the energy range from 10 keV/u to 10 MeV/u. Comparison between the results from the two methods demonstrates that the total and single-differential cross sections for the high-energy incident projectile case can be well evaluated using the simple M-FEPA model. Moreover, the M-FEPA model reproduces the essential features of the binary-encounter (BE) bump in the double-differential cross sections. Thus, the BE ionization mechanism is discussed in detail by adopting the M-FEPA model. In particular, the double- and single-differential cross sections from the 2s orbital show a high-energy hip, which is different from those from the 1s orbital. Based on Ref. [1], the Compton profiles of B2+ for 1s and 2s orbitals are given, and the hips in DDCS and SDCS from the 2s orbital are explained.     

缓冲层生长温度对In0.82Ga0.18As 薄膜结构及电学性能的影响

采用低压金属有机化学气相沉积(LP-MOCVD)技术,两步生长法在InP衬底上制备In_0.82Ga_0.18As材料。研究缓冲层的生长温度对In_0.82Ga_0.18As薄膜的结构及电学性能的影响。固定外延薄膜的生长条件,仅改变缓冲层生长温度(分别为410,430,450,470 ℃),且维持缓冲层其他生长条件不变。用拉曼散射研究样品的结构性能,测量四个样品的拉曼散射光谱,得到样品的GaAs的纵向光学(LO)声子散射峰的非对称比分别为1.53,1.52,1.39和1.76。测量样品的霍耳效应表明,载流子浓度随缓冲层生长温度变化而改变,同时迁移率也随缓冲层生长温度变化而改变。通过实验得出:缓冲层的生长温度能够影响In_0.82Ga_0.18As薄膜的结构及电学性能。最佳的缓冲层生长温度为450 ℃。     

聚合物基片对柔性有机发光器件性能的影响

以聚合物基片柔性ITO膜为透明电极，制备了ITO／TPD／Alq3／Al结构柔性有机发光器件，并与在相同条件下制备的玻璃基片相同结构器件作了比较。研究了不同基片对有机材料及器件性能的影响，指出选择不易吸湿、耐温高、热胀系数小的聚合物材料，提高柔性ITO膜的附着力和导电性，结合柔性ITO膜的具体特性。优化有机层的蒸镀条件，是提高柔性有机发光器件发光亮度和稳定性的重要途径。     

基于非参数背景抑制的弱小目标管线法检测

介绍了一种红外图像背景抑制的非参数方法(E_kernel)。提出了一种弱小目标的管线检测算法。E_kernel方法不同于传统的线性或非线性背景预测,它对背景杂波分布的统计特性不敏感,受其影响较小,具有非参数特性。管线检测算法对序列图像做若干相同的顺序处理,采用并行分布式计算,处理时间短。仿真试验表明,该算法能有效地检测出低信噪比红外序列图像中的弱小目标的运动轨迹,具有较高的实时性。     

First-principles calculations of structure and high pressure phase transition in gallium nitride

The phase transitions of semiconductor GaN from the Wurtzite (WZ) structure and the zinc-blende (ZB) structure to the rocksalt (RS) structure are investigated by using the first-principles plane-wave pseudopotential density functional method combined with the ultrasoft pseudopotential scheme in the generalized gradient approximation (GGA) correction. It is found that the phase transitions from the WZ structure and the ZB structure to the RS structure occur at pressures of 46.1 GPa and 45.2 GPa, respectively. The lattice parameters, bulk moduli and their pressure derivatives of these structures of GaN are also calculated. Our results are consistent with available experimental and other theoretical results. The dependence of the normalized formula-unit volume $V/V_{0 }$ on pressure $P$ is also successfully obtained.     

Bi2Te3-xSex(x≤3)同晶化合物电子结构的第一性原理研究

本文采用基于密度泛函理论的第一性原理全势能线性缀加平面波方法(FLAPW),分析了Bi₂Te_3-xSe_x体系中各原子自旋轨道耦合(SOI)的p_1/2修正对体系性质的影响,并对Bi₂Te_3-xSe_x(x≤3)同晶化合物的电子特性进行系统的理论研究,首次计算出Bi₂S 关键词： 2Te_3-xSe_x(x≤3)同晶化合物')" href="#">Bi₂Te_3-xSe_x(x≤3)同晶化合物 第一性原理 电子结构 自旋轨道耦合     

Design of new seismometer based on laser Doppler effect

In order to improve the resolution of seismic acquisition,a new seismic acquisition system based on tangential laser Doppler effect with an optimized differential optical configuration is proposed.The relative movement of the inertia object and the immobile frame is measured by laser Doppler effect,which can avoid the electromagnetic and thermometric interference,and the adoption of frequency-modulated (FM) transmission can improve the ability of anti-jamming.The frequency bandwidth is properly determined by analyzing the frequency of the Doppler signal.The velocity, displacement,acceleration, and frequency to be measured can be real-time acquired by frequency/velocity (F/V) converting the FM Doppler signal. A 100-dB dynamic range and the linear frequency range of 1.0 to 1000 Hz are realized.     

中能重离子微束辐照装置的研制

微束辐照装置是将辐照样品的束斑缩小到微米量级,能够对辐照粒子进行准确定位和精确计数的实验平台,是开展辐照材料学、辐照生物学、辐照生物医学以及微加工的有力工具.中国科学院近代物理研究所(IMP)正在研制中能重离子微柬辐照装置.该装置以兰州重离子加速器(HIRFL)系统提供的中能和低能重离子束流为基础,采用磁聚焦方式形成微米束.束运线上两台铅垂方向的偏转磁铁辅以四极磁铁构成对称消色差系统,将束流导向地下室,再用高梯度的三组合四极透镜强聚焦形成微米束斑,在真空中或大气中辐照样品.它将成为国内首台能够提供从低能(10MeV/u)到中能(100MeV/u)的重离子微束的公共实验平台,用于定位、定量照射靶物质(生物细胞、组织或其它非生物材料等),有助于深入揭示重离子与物质相互作用的本质,也为探索重离子辐照效应的应用提供新的手段.     

虫蛀玉米种子的空气耦合超声波检测

提出了一种基于空气耦合超声波技术的玉米种子虫蛀孔洞颗粒和完好颗粒分类识别方法·首先根据玉米颗粒的弹性模量、泊松比和密度等物理量计算出了玉米颗粒的声速,并根据检测精度需求设定了激励信号频率。然后采用MATLAB对采集的两类种子超声波信号数据进行分析处理,并分析了种子厚度和摆放方位对超声波响应特征的影响。最后建立了K近邻(KNN)、簇类独立软模式法(SIMCA)、Fisher线性判别(LDA)和决策树(DT)识别模型,并对模型性能进行了测试.结果表明;种子孔洞深度、胚部厚度和正反面方位不同,即超声波在种子表面的反射程度不同、在种子中传播声程不同,则起声波信号衰减程度不同,导致接收到信号的幅值不同,且样本点在主成分分析(PCA)特征空间的分布也不同。4种识别模型均可以实现对两类玉米的分类识别,其中KNN模型性能最佳,其对虫蛀孔洞颗粒和完好颗粒的正确识别率分别为98%100%,误差带为2%,0。此结果说明采用空气耦合超声波技术可以实现对玉米种子虫蛀孔洞颗粒的检测。