Ni/SnO_2复合薄膜的制备与光电性能

采用旋涂法将溶胶-凝胶法制备的Ni/Sn O2凝胶在玻璃基底上镀膜,得到了Ni/Sn O2复合薄膜,探讨了镍掺杂量、煅烧温度对薄膜结构和形貌的影响。通过X射线衍射、红外光谱、扫描电子显微镜等测试手段对Ni/Sn O2复合膜的结构和形貌进行表征。结果显示,500℃下煅烧的薄膜样品的结晶度较高,粒径小,颗粒分布均匀。用紫外-可见分光光度计和四探针电阻仪对其进行光学、电学性能测试,结果显示:适量的Ni掺杂可以提高Sn O2薄膜在近紫外光区的吸收,Ni/Sn O2薄膜在近紫外光区的吸收随着Ni2+掺杂摩尔分数从5%增加到10%而逐渐减小。当Ni2+掺杂摩尔分数为6%时,Ni/Sn O2复合薄膜的导电性能最好。     

噻胺酮麻醉剂对鼠S180肿瘤31P MRS的影响

对实验动物肿瘤进行活体³¹P MRS研究首要的是有效地固定动物.本文初步研究了用噻胺酮麻醉后的小鼠S180肿瘤在麻醉过程中³¹P MRS随时间的变异性.研究发现噻胺酮是一个安全系数高、起效快、麻醉过程适宜且对肿瘤的³¹P MRS无显著影响的麻醉药.因而噻胺酮适用于连续测定³¹P MRS的需要.     

用序列二次规划法设计ICF 靶区光路

 运用序列二次规划法设计了靶区光路。由ICF 柱面靶间接驱动实验对多路激光束排布的要求, 建立靶区数学模型, 用本文设计结果构筑光路排布线框实体。该三维线框以特征线代表60路激光驱动光束实体, 以特征线段的转折点代表240面反射镜的空间位置。     

环状输出UR90束旋转非稳腔的实验研究

 提出一种适合于高功率超音速横流氧碘化学激光器的环状输出的UR90束转非稳腔,采用FFT 方法模拟了具有非均匀分布的小信号增益时最低阶模的光场强度分布。利用大口径铜蒸汽激光器, 通过实验研究了在放大倍率为1.21和1.13的情况下,环状输出UR90腔正向模与反向模的基本特性, 得到较好的实验结果。     

巧用晶体三极管测小电容

在没有电容表的情况下，电容有无容量一般是用万用表的欧姆档大致估测，利用电容的充、放电作用，根据表针摆动角度的大小来估量其容量的大小．但这种方法只适用于容量大于几千pF的电容，当电容容量小于2000PF时，即使使用XIokQ的电阻档，表针也几乎不动，此时就难以判定是电容     

Si（Li）谱仪测定X射线荧光谱中CrKβ谱线化学位移的探索

采用放射源＾２４１Ａｍ５９．６ｋｅＶγ射线分别激发金属Ｃｒ、Ｃｒ２Ｏ３和Ｋ２ＣｒＯ４，用Ｓｉ（Ｌｉ）谱仪比较测量其Ｋｘ射线的能量。实验表明Ｋ２ＣｒＯ４和ＣｒＫβ能峰相对于金属Ｃｒ有２．１２±０．２７ｅＶ的位移。     

基于传送带量子纠缠光的卫星钟差测量

卫星钟差确定受限于经典测量的散粒噪声极限,钟差测量精度仅为ns量级.基于军民领域对高精度时间基准的迫切需求,提出了一种基于双路六延迟传送带量子纠缠光的卫星钟差测量方案,并且该方案以传送带协议为基础.首先,通过自发参量下转换制备了频率纠缠光信号.然后,利用HOM(Hong-Ou-Mandel)干涉仪对频率纠缠光信号进行了...     

高触发信号和功率合成的高峰值功率皮秒脉冲源

对于目标的攻击、干扰和探测,超宽带时域脉冲源的幅值直接影响其攻击、干扰和探测的强度和效果。基于雪崩晶体管的Marx电路被广泛应用在产生此类信号源上,传统的Marx电路可以一定程度上提高输出电压的幅值,但由于雪崩晶体管功率容量较低等原因,雪崩晶体管的Marx电路输出电压幅度会随级数增加而达到饱和。针对此类问题,为了产生更高幅值的脉冲信号,综合采用提高触发信号和使用宽带功率合成器的手段。最终利用26级Marx电路作为触发信号,4路40级Marx电路进行功率合成的方法,实现了输出电压幅值为8.7 kV、上升沿约为180 ps的技术指标,并通过机理分析了高触发信号对雪崩晶体管Marx电路的影响,通过实验得到了印证。     

Epitaxial Bi2Sr2CuOy thin films as p-type transparent conductors

Development of p-type transparent conducting thin films is tireless due to the trade-off issue between optical transparency and conductivity. The rarely concerned low normal state resistance makes Bi-based superconducting cuprates the potential hole-type transparent conductors, which have been realized in Bi₂Sr₂CaCu₂O_y thin films. In this study, epitaxial superconducting Bi₂Sr₂CuO_y and Bi₂Sr_1.8Nd_0.2CuO_y thin films with superior normal state conductivity are proposed as p-type transparent conductors. It is found that the Bi₂Sr_1.8Nd_0.2CuO_y thin film with thickness 15 nm shows an average visible transmittance of 65% and room-temperature sheet resistance of 650 Ω/sq. The results further demonstrate that Bi-based cuprate superconductors can be regarded as potential p-type transparent conductors for future optoelectronic applications.     

Note on Implementation of Three-Qubit SWAP Gate

In this paper, the synthesis and implementation of three-qubit SWAP gate is discussed. The three-qubit SWAP gate can be decomposed into product of 2 two-qubit SWAP gates, and it can be realized by 6 CNOT gates. Research illustrated that although the result is very simple, the current methods of matrix decomposition for multi-qubit gate can not get that. Then the implementation of three-qubit SWAP gate in the three spin system with Ising interaction is investigated and the sequence of control pulse and drift process to implement the gate is given. It needs 23 control pulses and 12 drift processes. Since the interaction can not be switched on and off at will, the realization of three-qubit SWAP gate in specific quantum system also can not simply come down to 2 two-qubit SWAP gates.