硝基苯并咪唑衍生物的合成、表征及抑菌活性的测定

以苯并咪唑为原料,经硝化、二茂铁磺酰化等步骤,合成了8种未见文献报道的硝基苯并咪唑衍生物,其结构经MS,¹H NMR和元素分析确证.由于硝基苯并咪唑的互变异构,二茂铁磺酰化后,产生两个异构体,用X射线衍射仪测定了化合物2a的晶体结构.初步的抑菌实验结果表明,该系列化合物具有良好的抑菌作用,其抑菌活性均优于对照药剂50%多菌灵可湿性粉剂.     

Analysis and Optimal Design of a Novel SiGe／Si Power Diode for Fast and Soft Recovery

We propose a novel p (Si1-xGex)-n^--n^ hetero-junction power diode with three-step gradual changing doping concentration in the base region,and the structure mechanism is analysed.The fast and soft reverse recovery characteristics have been obtained and the optimal design of the changing doping concentration gradient andthe percentage of Ge is carried out.Compared to the conventional structure of p^ (Si1-xGex)-n^--n^ with a constant doping concentration,the softness factor S increases nearly two times,the reverse recovery time and the peak reverse current are reduced over 15% for the device with the optimized concentration gradient,while the forward drop is almost unchanged.Taking into account of the improvement of the whole characteristics of the novel device,we obtain the optimal percentage of Ge to be 20%.     

发光层掺杂对红光OLED性能影响研究

制备高效率、高亮度的红光有机发光二极管是显示器实现全彩色的关键,对高性能的红光有机发光二极管器件研究具有十分重要的意义.本文主要研究了掺杂剂(DCJTB)浓度对红光有机发光二极管性能影响.实验采用真空热蒸镀的方法,选取结构为ITO／2-TNATA(20 nm)/NPB(30 nm)/AlQ(50 nm):(X%)DCJTB／AlQ(30 nm)／LiF(0.8 nm)／Al(100 nm)的红光器件,在高准确度膜厚控制仪的监控下,实现了有机薄膜功能材料的精确蒸镀.研究表明:红光掺杂剂掺杂浓度为(2.5~3.0)%时,在12 V电压下,可以得到发光亮度最高达到8 900 cd/m²,发光效率大于2.8 cd/A,且发光光谱波长为610~618 nm较为理想的红光有机发光二极管器件.     

锂氧电池关键技术研究

锂氧电池是一种用金属锂作负极,以氧气作为正极反应物的金属空气电池,由于其具备较高的理论比能量且环境友好等优势,近年来开始备受关注。本文主要概述了锂氧电池关键技术的最新研究进展,包括正极材料、催化剂、电解质、负极及电池结构等,并在此基础上对其未来发展趋势进行了展望,以期对其他金属空气电池的研究提供新思路和手段。     

(1-x)CaTiO3-xLaAlO3陶瓷的微波介电性能研究

通过传统的固相反应法制备了(1-x)CaTiO3-xLaAlO3陶瓷,系统地研究了LaAlO3含量的变化对陶瓷的晶体结构、微观结构和微波介电性能的影响.结果表明,LaAlO3含量的增加导致(1-x)CaTiO3-xLaAlO3陶瓷的晶格结构发生畸变,使得陶瓷的介电常数下降、Q·f值增加,并使其谐振频率温度系数向负值处发生偏移.LaAlO3的含量为x=0.33时,(1-x)CaTiO3-xLaAlO3陶瓷的烧结温度为1460℃,展示了良好的微波介电性能:εr=45.3、Q·f=36218 GHz、τf=-0.5 ppm/℃.     

微柱电泳与紫外-可见分光光度法的在线联用

自制了紫外-可见分光光度计的微柱电泳高效分离附件, 介绍了X射线衍射法在电泳微柱制备中的应用以及微柱电泳与紫外-可见分光光度法的在线联用。使用水热法合成均匀石英微米晶粒,采用X射线衍射法表征和控制产物的晶相,并用扫描电子显微镜观察产物形貌。将合成的石英微米晶粒均匀填充在2 mm i.d.石英管中,制成电泳微柱。通过微柱电泳与紫外-可见分光光度法在线联用,对非衍生的色氨酸、苯丙氨酸和酪氨酸进行了分离检测。检出限分别为0.037, 0.20和0.20 μmol·L-1,色氨酸的分离效率为每米4.5×104,电泳微柱的样品容量达到35 μL。实验结果表明,填充石英微米晶粒的微柱电泳可抑制大柱径电泳热效应,增大样品容量,提高检测灵敏度。微柱电泳与常规紫外-可见分光光度法联用可简便地对混合物进行在线分离和测定,进一步拓宽了紫外-可见分光光度计在光谱重叠组分痕量分析中的应用。     

A Novel Method for the Initial-Condition Estimation of a Tent Map

Based on the connection between the tent map and the saw tooth map or Bernoulli map, a novel method for the initial-condition estimation of the tent map is presented. In the method, firstly the symbolic sequence generated from the tent map is converted to the forms obtained from the saw tooth map and Bernoulli map, and then the relationship between the symbolic sequence and the initial condition of the tent map can be obtained from the initial-condition estimation equations, which can be easily obtained, hence the estimation of the tent map can be achieved finally. The method is computationally simple and the error of the estimator is less than 1/2N. The method is verified by software simulation.     

半超结SiGe高压快速软恢复开关二极管

将SiGe材料的优异性能与半超结结构的优势相结合,提出了一种半超结SiGe功率二极管, 可适应高频化电力电子电路对功率二极管低通态压降、高击穿电压、较小的反向漏电流以及快而软的反向恢复特性的要求,显著提高器件的各种特性. 关键词： 半超结 硅锗二极管 高压 快速软恢复     

基于Optiwave的脊形SiGe OI光波导结构设计

利用有效折射率的数值解法,计算出了SiGe OI脊形光波导的有效折射率.通过对SiGe OI光波导结构参量的理论分析和计算,得到了SiGe OI脊形光波导传输单模光波时内外脊高H,h及脊宽W的尺寸.通过Optiwave软件对SiGe OI脊形光波导进行建模仿真,验证了理论分析和计算的正确性.     

A Novel Fully Depleted Air AlN Silicon-on-Insulator Metal--Oxide--Semiconductor Field Effect Transistor

A novel fully depleted air A1N silicon-on-insulator （SOD metai-oxide-semiconductor field effect transistor （MOS- FET） is presented, which can eliminate the self-heating effect and solve the problem that the off-state current of SOI MOSFETs increases and the threshold voltage characteristics become worse when employing a high thermal conductivity material as a buried layer. The simulation results reveal that the lattice temperature in normal SOI devices is 75K higher than the atmosphere temperature, while the lattice temperature is just 4 K higher than the atmosphere temperature resulting in less severe self-heating effect in air A1N SOI MOSFETs and A1N SOI MOSFETs. The on-state current of air A1N SOI MOSFETs is similar to the A1N SOI structure, and improves 12.3% more than that of normal SOI MOSFETs. The off-state current of A1N SOI is 6. 7 times of normal SOI MOSFETs, while the counterpart of air A1N SOI MOSFETs is lower than that of SOI MOSFETs by two orders of magnitude. The threshold voltage change of air A1N SOl MOSFETs with different drain voltage is much less than that of A1N SOI devices, when the drain voltage is Mased at 0.8 V, this difference is 28mV, so the threshold voltage change induced by employing high thermal conductivity material is cured.