排序方式: 共有90条查询结果,搜索用时 12 毫秒
31.
通过分析门极换流晶闸管(GCT)透明阳极的电流输运过程,研究了透明阳极的机理,导出 了透明阳极电子电流密度的表达式.并利用MEDICI软件对GCT的开关特性进行了模拟,验证了 理论分析的正确性.另外,将GCT与具有普通阳极的门极可关断晶闸管(GTO)进行比较,分 析了透明阳极的特性,结果表明将透明阳极与缓冲层结合使用,可以更好地协调GCT的阻断 特性、通态特性及开关特性之间的矛盾,从而有效地改善GCT的综合特性.结论得到了实验结 果的证实.
关键词:
透明阳极
电力半导体器件
门极换流晶闸管
注入效率 相似文献
32.
Thermal concentrators and cloaks with ellipsoidal shapes are designed by utilizing the transformation thermotics method and finite element simulations.The thermal conductivities for the concentrator and cloak are directly derive in Cartesian coordinates.The simulation results show that the ellipsoidal thermal concentrator can focus heat flux into a central region and that the ellipsoidal thermal cloak can guide heat flux around the cloaked region smoothly without disturbing the external temperature distribution and heat flux.The present method can be extended to design arbitrarily shaped thermal metadevices with novel properties. 相似文献
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34.
为满足电力电子电路对功率开关二极管高频化的发展要求,提出了一种大功率低功耗快速软恢复p+(SiGeC)-n--n+异质结二极管.与常规的Si p-i-n二极管相比,在正向电流密度不超过1000 A/cm2情况下,p+(SiGeC)-n--n+二极管的正向压降减少了约1/5,有效降低了器件的通态功耗;反向恢复时间缩短了一半多,反向峰值电流降低了约25%,软
关键词:
快速软恢复
大功率低功耗
SiGeC/Si异质结功率二极管 相似文献
35.
This paper proposes a novel super junction (SJ) SiGe switching power
diode which has a columnar structure of alternating p- and
n- doped pillar substituting conventional n- base region
and has far thinner strained SiGe p+ layer to overcome the
drawbacks of existing Si switching power diode. The SJ SiGe diode
can achieve low specific on-resistance, high breakdown voltages and
fast switching speed. The results indicate that the forward voltage
drop of SJ SiGe diode is much lower than that of conventional Si
power diode when the operating current densities do not exceed
1000 A/cm2, which is very good for getting lower operating
loss. The forward voltage drop of the Si diode is 0.66V whereas that
of the SJ SiGe diode is only 0.52 V at operating current density of
10 A/cm2. The breakdown voltages are 203 V for the former and
235 V for the latter. Compared with the conventional Si power diode,
the reverse recovery time of SJ SiGe diode with 20 per cent Ge
content is shortened by above a half and the peak reverse current is
reduced by over 15%. The SJ SiGe diode can remarkably improve the
characteristics of power diode by combining the merits of both SJ
structure and SiGe material. 相似文献
36.
A surface crystallization phenomenon on bonding pads and wires of integrated circuit
chip is reported in this paper. Through a lot of experiments, an unknown failure
effect caused by mixed crystalline matter is revealed, whereas non-plasma fluorine
contamination cannot cause the failure of bonding pads. By experiments combined with
infrared spectroscopy analysis, the surface crystallization effect is studied. The
conclusion of the study can provide the guidance for IC fabrication, modelling and
analysis. 相似文献
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38.
假设问题中所含随机过程为鞅,本文证明了带随机过程的随机规划问题共最优值过程与最优解集过程分别为实值上鞅与集值上鞅,且存在最优鞅通过程。 相似文献
39.
硫酸铵母液中Cl-不断循环富集导致设备腐蚀严重,同时影响硫酸铵结晶及品质。本文运用硫酸钙铝法和脱硫灰铝法分别对硫酸铵母液进行除氯研究,采用筛分法对晶体粒径进行分析、扫描电子显微镜(Scanning Electron Microscope, SEM)对晶体尺寸、形貌进行表征,X射线衍射仪(X-ray Diffractometer,XRD)分析晶体物相。研究表明:除氯剂最佳投加量为3.0 g硫酸钙和0.8 g偏铝酸钠,3.0 g脱硫灰和0.8 g偏铝酸钠,对应除氯率分别为31.70%和36.38%。在转速200 r/min,反应温度为75 ℃,两种除氯剂加入会使ρ(Cl-)快速下降,此为Cl-与Ca2+和AlO2-反应形成了不溶钙铝氯化合物;除氯剂加入过量会使NaAlO2发生双水解,解离出OH-,抑制Cl-与Ca2+、AlO2-反应,导致Cl-去除率下降。硫酸钙铝法所产生的钙铝氯化合物会附着在晶粒活性表面进而增大硫酸铵结晶介稳区宽度,抑制晶体正常生长,导致结晶量减少;脱硫灰铝法中杂质金属可将OH-消耗和减小硫酸铵结晶介稳区宽度,所含大量SO42-会使硫酸铵结晶量增加,但晶体纯度降低。相关研究结果可为减少氨法脱硫设备腐蚀及优化硫酸铵结晶提供参考。 相似文献
40.