改进次最佳检测在侧扫声呐底混响抑制中的应用*

侧扫声呐进行沉底小目标探测时,底混响是主要背景干扰。底混响通常是一种非平稳、非高斯的带限噪声,它使得白噪声条件下的滤波器性能受到限制。在混响背景下常利用自回归模型对接收信号进预行白化处理,但对于实际侧扫声呐应用,白化后直接匹配滤波的处理效果不甚理想。针对此问题,在自回归模型预白化的基础上,提出采用一种次最佳检测与多分辨二分奇异值分解相结合的改进方法。该方法首先对接收信号进行分段处理,利用改进Burg算法估计每段数据自回归模型的系数及阶数;然后构造白化滤波器对分段数据预白化,并对白化后的数据进行多分辨二分奇异值分解;最后应用ostu方法对原始声图和处理后的声图进行目标检测。仿真与实验结果表明,该方法明显提高了信混比,改善了侧扫声呐沉底静态小目标的成图质量,有利于后期实现基于图像的目标自动检测。     

Nanoelectronic devices---resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

This paper reports that InAs/In$_{0.53}$Ga$_{0.47}$As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm$^{2}$ has been obtained for diodes with AlAs barriers of ten monolayers, and an In$_{0.53}$Ga$_{0.47}$As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.     

激光诱导Cu等离子体特性研究

实验在大气环境下测定激光诱导Cu等离子体的时间分辨发射光谱,通过对ICCD门宽、ICCD与激光脉冲延迟、增益、激光能量等参数的调节来达到最佳的时间分辨光谱.利用最佳光谱图,通过测定的光谱强度和Stark展宽计算激光诱导Cu等离子体的电子温度和电子密度,得出激光诱导Cu等离子体的电子温度和电子密度时间演化特性.结果表明在本实验条件下延时100-1000 ns范围内变化时,相应的电子温度范围为15000 K-5000 K,在200 ns-500 ns时下降的很快,在500 ns后电子温度下降的越来越平稳;延时在200-900 ns之间变化,等离子体的电子密度一直在下降,延时200-600 ns下降着延时的增加的平缓,600-900 ns下降的很快,随着时间的演化,电子密度也越来越小.     

基于Matlab的同态滤波器的优化设计

介绍同态滤波器的基本原理,基于Matlab软件,设计了适用的同态滤波器模型,并给出了其表达式参数,在此基础上,将同态滤波方法应用到彩色图像的光照补偿和对比度增强中。结果表明:经处理后的图像,局部对比度增强效果明显,较好地保持了图像的原始面貌,取得了预期的理想滤波效果。基于Matlab的同态滤波,能更好地适合人眼的视觉特性,提供了图像分析与判读的一种新方法。     

基于线阵CCD的迈克耳孙干涉仪条纹计数器

通过CCD图像传感器对光干涉信号进行捕捉与采集,并将捕捉信号送至ARM微控制器,利用芯片内部的A/D转换单元将模拟信号转换成数字信号,然后对数字信号进行分析、变换、测量处理,将干涉图像、干涉环变换方向及计数结果显示在液晶屏上,该方法消除了人工记录干涉圆环数目时因疲劳而产生的计数误差,提高了测量精度.     

兰州充气谱仪的焦平面探测系统

在兰州充气谱仪上,设计安装了一套新的焦平面探测系统,该系统包括飞行时间(TOF) 探测器、盒型硅(Si-box) 探测器阵列和反符合(Veto) 探测器3 部分。Si-box 探测器阵列是由3 块位置灵敏硅探测器(PSSD) 和8 块周边硅探测器(SSD) 构成,它对注入核的 衰变的探测效率达到80% 左右。Si-box 探测器阵列与TOF 探测器关联可以有效区分注入信号和 衰变信号。Veto 探测器与Si-box 探测器阵列和TOF 探测器关联可以反符合掉高能轻粒子对注入信号和 衰变信号的干扰。简要介绍了PSSD 的能量和位置刻度方法。这套探测器系统已经应用于40Ca+175Lu 和40Ca+169Tm 的实验。实验结果表明,该探测器系统具备很好的本底抑制能力,能够给出干净的a衰变能谱,结合能量-时间-位置关联测量方法可以实现对单原子的探测和鉴别,总体上达到了预期的设计要求。A new designed focal plane detection system was mounted at the gas-filled recoil separator at Institute of Modern Physics, Chinese Academy of Sciences, which consisted of a time-of-flight (TOF) detector, a silicon-box (Sibox) detector array and a silicon veto detector. Three position sensitive silicon detectors (PSSD) were surrounded by eight side silicon detectors (SSD) without position sensitive, forming a box of the detector open from the front side. The detection efficiency for -decays of implanted nuclei was about 80%. The anticoincidence condition for the signals from the TOF detector and Si-box detector array was used to distinguish between the pulses originating from the implanted nuclei and their -decays. The veto detector information was used to discriminate events due to high-energy charged particles．External energy calibration and position calibration of PSSD are described concisely in this work. This systemhas been used in experiments of 40Ca+175Lu and 40Ca+169Tm. Clean a-decay spectra obtained in these reactions indicated the detection system has a good performance in background suppression. Evaporation residues can be identified by the energy-time-position correlation method. On the whole, the new designed focal plane detection system has achieved thedesign requirements.     

充气反冲核谱仪焦平面探测阵列的GEANT4模拟

充气反冲核谱仪(SHANS)是目前国内合成缺中子锕系新核素、研究重核素a衰变性质的重要实验装置.为进一步提高焦平面探测阵列对重核素a衰变粒子和射线的探测效率,计划对现有探测装置进行升级.本文的主要工作是采用基于蒙特卡罗方法的GEANT4软件对现有的谱仪探测器阵列进行模拟,并与实验测量数据进行比较,以验证程序的准确性.结...     

A Small Signal Equivalent Circuit Model for Resonant Tunnelling Diode

We report a resonant tunnelling diode （RTD） small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In0.53Ga0.47As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current-voltage （I-V） characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunnelling process, is also calculated to be 2.09ps.     

188Tl的πh9/2(○×)νi13/2扁椭球转动带的旋称反转研究

利用能量为170MeV的35Cl束流,通过157Gd(35Cl,4n)熔合蒸发反应研究了188Tl的高自旋态能级结构.依据实验结果建立了188Tl基于πh9/2(○×)νi13/2组态的转动带.根据双奇Tl核能级结构的相似性,指定了188Tlπh9/2(○×)νi13/2扁椭球转动带的自旋值.结果表明在188Tl中,πh9/2(○×)νi13/2扁椭球转动带在低自旋区具有旋称反转性质.利用包含了质子-中子剩余相互作用的准粒子-转子模型,定性地解释了πh9/2(○×)νi13/2扁椭球转动带的低自旋区旋称反转现象.