大功率半导体激光调制系统及内部调制特性

从半导体激光直接调制理论出发,对直接调制过程中影响半导体激光器高频调制性能的因素进行了研究;运用PSpice建立半导体激光器等效电路模型,仿真研究了电学寄生参数对半导体激光器调制特性的影响且提出了相应的提高其调制性能的方法。在研究半导体激光器调制特性的基础上,设计了一种半导体激光直接调制系统。运用OrCAD/PSpice对直接调制驱动系统进行仿真。研制的半导体激光调制系统实现了频率为1 MHz、平均功率为1.1 W的调制激光输出。     

水平腔面发射半导体激光器研究进展

近年来,水平腔面发射半导体激光器具有高功率、高光束质量及易封装集成等优良性能,已成为激光器领域的研究热点。本文详细阐述了几种水平腔面发射半导体激光器的结构设计、工作原理以及激光输出特性,并对该激光器国内外最新研究进展与发展现状进行了总结和论述。在此基础上,对该激光器的研究方向和发展趋势进行了分析与展望。目前,水平腔面发射半导体激光器的激光输出功率可达瓦级,美国Alfalight公司引入曲线形光栅的单一发射器输出功率可达73 W。随着应用领域的不断拓展,中远红外波段水平腔面发射激光器将成为未来的研究焦点。     

金辅助催化方法制备GaAs和GaAs/InGaAs纳米线结构的形貌表征及生长机理研究

利用金（Au）辅助催化的方法,通过金属有机化学气相沉积技术制备了GaAs纳米线及GaAs/InGaAs纳米线异质结构.通过对扫描电子显微镜（SEM）测试结果分析,发现温度会改变纳米线的生长机理,进而影响形貌特征.在GaAs纳米线的基础上制备了高质量的纳米线轴、径向异质结构,并对生长机理进行分析.SEM测试显示,GaAs/InGaAs异质结构呈现明显的“柱状”形貌与衬底垂直,InGaAs与GaAs段之间的界面清晰可见.通过X射线能谱对异质结样品进行了线分析,结果表明在GaAs/InGaAs轴向纳米线异质结构样品中,未发现明显的径向生长.从生长机理出发分析了在GaAs/InGaAs径向纳米线结构制备过程中伴随有少许轴向生长的现象.     

侧向微结构宽脊波导分布反馈1.06μm半导体激光器

为了改善宽脊波导半导体激光器侧模特性和光谱特性,提出了一种具有侧向微结构脊波导和高阶脊表面光栅的分布反馈半导体激光器.该激光器在宽脊波导的两侧刻蚀微结构区,基于各阶侧模光场分布不同的特性,增大了谐振腔内基侧模与高阶侧模的损耗差,消除了远场光斑"多瓣"现象并且输出功率有所提升;同时,借助高阶脊表面光栅,器件的线宽得到了进...     

和厚朴酚对非小细胞肺癌细胞的辐射增敏效应

研究了和厚朴酚（HNK）对非小细胞肺癌（NSCLC）细胞系A549和H1299对低线性能量转移（LET） X射线和高LET碳离子的辐射增敏效应。首先用CCK-8检测了HNK对A549和H1299细胞的生长抑制情况,发现20 μmol/L的HNK处理对细胞的生长抑制作用较弱。用该浓度HNK预处理细胞2 h后给予不同剂量X射线或碳离子的照射,克隆存活法检测细胞的辐射敏感性,Annexin-PI双染法检测细胞凋亡,γH2AX焦点法检测DNA的双链断裂（DSB）损伤。实验结果显示:与X射线相比,NSCLC细胞对碳离子更敏感,HNK预处理仅对碳离子照射有辐射增敏作用;与碳离子单独照射相比,HNK预处理联合碳离子照射诱导了更明显的细胞凋亡;在照射后24 h,HNK预处理联合碳离子照射引起的细胞γH2AX焦点阳性率维持在较高水平,而X射线照射没有这些效应。实验结果表明,HNK预处理抑制了NSCLC细胞DNA的DSB修复,诱导了细胞凋亡的发生,从而提高了细胞对碳离子的辐射敏感性。The radiosensitizing effect of Honokiol (HNK) on non-small cell lung carcinoma (NSCLC) cell lines A549 and H1299 to low-linear energy transfer (LET) X-rays and high-LET carbon ions was investigated in this study. First, the inhibitory effects of HNK on the growth of A549 and H1299 cells were detected by CCK-8 assay, and 20 μmol/L HNK treatment was found to induce a growth inhibitory effect slightly in these two cell lines. Cells were pre-treated with HNK and then irradiated with X-rays and carbon ions of different doses. Cellular radiosensitivity, apoptosis and DNA damage were analyzed by clonogenic survival, Annexin-PI staining and γH2AX foci, respectively. The results showed the cells were more sensitive to carbon ion irradiation compared to X-rays and the radiosensitization of HNK was only observed after carbon ion irradiation. Furthermore, the co-treatment led to higher apoptosis rate 48 h after irradiation and increased the positive rate of γH2AX foci 24 h after irradiation in A549 and H1299 cells compared with those in the groups treated with carbon ion irradiation alone. These phenomena were not observed after X-ray irradiation. Our data suggest that the pre-treatment with HNK inhibited DNA DSB repair, induced apoptosis and then enhanced the cellular radiosensitivity to carbon ions in NSCLC cells.     

Lateral characteristics improvements of DBR laser diode with tapered Bragg grating

Broad area semiconductor laser (BAL) has poor lateral beam quality due to lateral mode competition, which limits its application as a high-power optical source. In this work, the distributed Bragg reflector laser diode with tapered grating (TDBR-LD) is studied. By changing the lateral width, the tapered grating increases the loss of high-order lateral modes, thus improving the lateral characteristics of the laser diode. The measuring results show that the TDBR-LD can achieve a single-lobe output under 0.9 A. In contrast to the straight distributed Bragg reflector laser diode (SDBR-LD), the lateral far field divergence of TDBR-LD is measured to be 5.23° at 1 A, representing a 17% decline. The linewidth of TDBR-LD is 0.4 nm at 0.2 A, which is reduced by nearly 43% in comparison with that of SDBR-LD. Meanwhile, both of the devices have a maximum output power value of approximate 470 mW.     

高温LDAs侧面脉冲泵浦Nd:YAG激光器

设计了一台紧凑型高温激光二极管阵列侧面泵浦Nd:YAG脉冲激光器.通过半导体制冷器控制泵浦源工作温度在60℃,其发射中心波长为808 nm,谱线宽度为4 nm.模拟了泵浦源在40℃、50℃和60℃条件下60 s内的温度场分布.实验所用激光增益介质为Nd:YAG晶体,尺寸为φ5 mm×50 mm,掺Nd3+摩尔浓度为1....