Isoscaling of projectile-like fragments

In this paper, the isotopic and isotonic distributions of projectile fragmentation products have been simulated by a modified statistical abrasion--ablation model and the isoscaling behaviour of projectile-like fragments has been discussed. The isoscaling parameters α and β have been extracted respectively, for hot fragments before evaporation and cold fragments after evaporation. It looks that the evaporation has stronger effect on α than β. For cold fragments, a monotonic increase of α and β with the increase of Z and N is observed. The relation between isoscaling parameter and the change of isospin content is discussed.     

半导体黄光发光二极管新材料新器件新设备

在可见光范围内,半导体发光二极管(LED)发展很不平衡,黄光LED光效(光功率效率)长期远低于其他颜色光效.本文基于GaN/Si体系,从材料生长、芯片制造、器件物理和专用装备等方面进行了系统研究,解决了外延膜龟裂、位错过多、量子阱应力过大、InGaN黄光阱材料相分离、空穴浓度不足、阱材料生长温度过低、衬底吸光、电极挡光等问题,率先实现了高光效黄光LED关键性突破.所研制的黄光LED器件,在20 A/cm~2驱动下波长565 nm黄光LED光效达26.7%,对应164 lm/W;在1 A/cm~2驱动下波长577 nm黄光LED光效达42.8%,对应248 lm/W.基于高光效黄光LED,开发了无荧光粉、多基色LED照明新光源,实现了纯LED照明光源在路灯、氛围灯等方面应用.     

Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quantum-Well Light-Emitting Diodes with V-Shaped Pits Grown on Si Substrates

Effect of hydrogen(H_2) treatment during the GaN barrier growth on the electroluminescence performance of green In GaN/GaN single-quantum-well light-emitting diodes(LEDs) grown on Si substrates is experimentally investigated. We prepare two LED samples with different carrier gas compositions during the growth of GaN barrier. In the H_2 free LED, the GaN barrier is grown in full nitrogen(N_2) atmosphere. For the other H_2 treated LED, a mixture of N_2 and H_2 was used as the carrier gas. It is observed that V-shaped pits decrease in size after H_2 treatment by means of the scanning electron microscope. Due to the fact that the p–n junction interface would be closer to the p-GaN as a result of smaller V-shaped pits, the tunneling barrier for holes to inject into the In GaN quantum well would become thicker after H_2 treatment. Hence, the external quantum efficiency of the H_2 treated LED is lower compared to the H_2 free LED. However, LEDs would exhibit a better leakage behavior after H_2 treatment during the GaN barrier growth because of more effective blocking of the threading dislocations as a result of the H_2 etching at V-shaped pits.     

平滑的PL和分布位点过程之间离的渐近分布

在随机右删失情况下,我们证明了基于平滑ＰＬ估计和平滑ＰＬ分位点估计的Ｂａｈａｄｕｒ－Ｋｉｅｆｅｒ型过程的弱极限定理。     

聚合物反应加工过程中的原位合金化

用反应加工方法将具有不同性能的高分子材料通过共价键或离子键组装在一起,制备具有各共混组分优良性能的新型高分子合金材料,是当前高分子材料科学发展较快的领域之一.本文分别就聚合物/聚合物共混体系和聚合物/可聚合性单体共混体系原位合金化问题进行了讨论,简要概括了国内外该领域研究取得的最新成果.     

α-Fe2O3纳米立方体的水热合成及其光催化性能研究

采用简单水热法合成出了成分纯净、光催化性能优良的α-Fe2O3纳米立方体,并对合成产物进行物相分析、形貌观察、微观结构分析、氮气吸脱附测试及光催化性能测试.结果表明:该α-Fe2O3纳米材料形貌均一,呈规则的立方体形状,立方体边长为90~150 nm.合成产物为六方相结构,成分纯净、结晶性高;对亚甲基蓝、甲基橙、罗丹明B三种有机染料具有良好的光催化活性.     

过冷液氮温度下块材的悬浮特性及其仿真研究

随着温度的降低,超导块材表现出的超导特性也随之变化.本文结合现有实际应用的车载超导块材冷却方法,通过改变气压的方式营造过冷液氮温度条件,探究块材组合与Halbach轨道之间的悬浮特性.由于实验测量存在一定局限性,只能完成部分工况条件下的研究.为了更加系统全面的研究,本文对过冷状态下超导块材的悬浮特性进行仿真计算,通过与实验结果对比来确定仿真参数.结果显示,仿真计算与实验数据吻合度较高,为后期的研究工作提供了仿真工具.     

Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection

It is observed that the radiative recombination rate in InGaN-based light-emitting diode decreases with lattice temperature increasing.The effect of lattice temperature on the radiative recombination rate tends to be stable at high injection.Thus,there should be an upper limit for the radiative recombination rate in the quantum well with the carrier concentration increasing,even under the same lattice temperature.A modified and easily used ABC-model is proposed.It describes that the slope of the radiative recombination rate gradually decreases to zero,and further reaches a negative value in a small range of lattice temperature increasing.These provide a new insight into understanding the dependence of the radiative recombination rate on lattice temperature and carrier concentration in InGaN-based light-emitting diode.     

SiC表面圆环槽边缘效应实验研究

基于固体边缘效应,对碳化硅(SiC)表面激光加工圆环形沟槽的润湿特性进行实验研究,通过分析去离子水在圆环槽上的润湿性能及其在边缘处的铺展行为,获得了环槽深度与环槽宽度对液滴在边缘处最大表观接触角的影响规律.结果表明,SiC圆环槽阻碍液滴铺展,光滑基体表面上接触角为70°,激光加工圆环槽深度为290μm,宽度为1 mm时...     

电子计算机的发展现状及应用

近年来由于电子计算机的迅速发展,它的应用范围日益广泛,目前已深入到国民经济的各个领域,越来越多地引起人们的重视。电子计算机到目前还只有二十多年的历史,但已发展成为一门极其重要的尖端技术。自从1947年美国建造了第一台电子数字计算机ENIAC,到现在,许多国家建立了计算机工业体系,并且从1965年开始形成一门独立的计算机科学。目前全世界约有16万台电子数字计算机在运行,用于科学计算、实时控制、数据处理和生产过程的自动化等方面。近年来电子计算机产量增加非常迅速,每年近2万台之多。