ICP-AES测定工业用氢氧化钠中Fe、Si、Ca和Mg

电感耦合等离子体-原子发射光谱法(ICP-AES)同时测定了工业用氢氧化钠中Fe、Si、Ca、Mg,探讨了功率对测定结果的影响,用离峰扣背景法消除背景干扰,用基体校正系数消除基体干扰,加标回收率在97.9%—105%之间。     

活性炭富集—GFAAS法测定乙烯气中的砷含量

提出一种乙烯气中砷的富集，消解方法，详细地考察了实验条件，用ＧＦＡＡＳ法对乙然气中砷含量进行了测定。相对标准偏差〈４．７％，测定结果与氢化物原子荧光法测定结果相吻合。     

π±介子上康普顿散射过程的重新计算

用微扰量子色动力学重新计算了π^±介子上的康普顿散射过程的截面和相位.此计算把实康普顿散射作为虚康普顿散射的一种极限情形进行了处理,重点是通过比较不同模型的分布振幅对物理可观察量的影响,说明分布振幅在端点区域的行为对康普顿散射过程截面和相位的影响,由此探索用微扰量子色动力学计算这个问题的自洽性问题.     

Transfer ionization cross-sections measured in collisions of highly charged argon ions with neon target

: Multiple electron transfer processes are studied for Arq+n- Ne (q= 8, 9, 11, 12) collisions by using multi-parameter coincidence techniques. Various electron transfer processes are identified experimentally and the related cross-sections are measured. The dependence of transfer ionization cross-sections on the recoil charge states is compared with the results from the modified molecular classical overbarrier model. It is found that the modified model described the experimental results reasonably.     

Photonic band structures of two-dimensional photonic crystals with deformed lattices

Using the plane-wave expansion method, we have calculated and analysed the changes of photonic band structures arising from two kinds of deformed lattices, including the stretching and shrinking of lattices. The square lattice with square air holes and the triangular lattice with circular air holes are both studied. Calculated results show that the change of lattice size in some special ranges can enlarge the band gap, which depends strongly on the filling factor of air holes in photonic crystals; and besides, the asymmetric band edges will appear with the broken symmetry of lattices.     

Electrical Characteristics of Copper Phthalocyanine Thin-Film Transistors with Polyamide-6/Polytetrafluoroethylene Gate Insulator

Polyamide-6（PA 6）/polytetrafluoroethylene is studied as a potential gate dielectric for flexible organic thin film transistors. The same method used for the formation of organic semiconductor and gate dielectric films greatly simplifies the fabrication process of devices. The fabricated transistors show good electrical characteristics. Ambipolar behaviour is observed even when the device is operated in air.     

模拟蚂蚁觅食行为的乳腺钙化点边缘提取

针对计算机辅助乳腺癌诊断中钙化点的提取具有较大难度的问题,计算了乳腺数字图像中每个像素点的最大梯度值。首先按照等梯度合并的原则将像素点划分为像素组,按照等分整个梯度区间的原则给定初始梯度聚类中心,模拟蚁群觅食行为中学习机制,以概率选择的方式进行像素点组的聚类得到新的聚类中心,然后再以模糊C均值法(FCM)对得到的聚类进行优化,从而提取出属于钙化点边缘的像素点。实验证明,通过选择适当的参数,用此方法提取乳腺钙化点边缘的效果良好。     

掺锗硅基高非线性光纤超连续光源研究

利用非线性偏振旋转锁模掺铒光纤激光器和1100m长的掺锗硅基高非线性光纤制作了超连续光源,获得了从1150～1750nm的超宽带输出光谱,其中1150～1350nm波段光谱起伏小于3dB,1600～1700nm波段平坦度优于1dB,并有很好的向长波延展空间。光谱展宽的机理为孤子分裂与受激拉曼散射,而四波混频使光谱进一步展宽。     

纳秒激光诱导C60分子碎裂中轻碎片离子C+n(n《30)的产生机理研究

采用飞行时间质谱计测量了纳秒激光诱导C60分子碎裂中轻碎片离子C n(n≤11)的初始平均动能,结果显示轻碎片离子具有相同的初始平均动能(约为0.34 eV),并且该动能在一定范围内不随激光通量的变化而明显改变.结合前人的实验结果,对纳秒激光诱导C60分子碎裂中轻碎片离子C n(n<30)的主要产生模式作了新的阐述,即C60分子级联发射15个C2分子和一个电子形成自身不稳定的C 30离子,在皮秒时间尺度内C 30离子的笼形结构塌陷,进而轻碎片离子产生.     

Dependence of Crystal Quality and β Value on Synthesis Temperature in Growing Gem Diamond Crystals

High quality Ib gem diamond single crystals were synthesized in cubic anvil high-pressure apparatus （SPD- 6 × 1200） under 5.4GPa and 1230℃-1280℃. The （100） face of seed crystal was used as growth face, and Ni70Mn25Co5 alloy was used as solvent/catalyst. The dependence of crystal quality andβ value （the ratio of height to diameter of diamond crystal） on synthesis temperature was studied. When the synthesis temperature is between 1230℃ and 1280℃, theβ value of the synthetic high-quality gem diamond crystals is between 0.4 and 0.6. The results show that when theβ value is between 0.4 and O. 45, the synthetic diamonds are sheet-shape crystals; however, when theβ value is between 0.45 and 0.6, the synthetic diamonds are tower-shape crystals. In addition, when theβ value is less than 0.4, skeleton crystals will appear. When theβ value is more than 0.6, most of the synthetic diamond crystals are inferior crystals.