Determination of the time resolution for neutron scintillation detectors by multi-coincidence measurement

Based on the multi-coincidence measurement, the time resolution of three liquid scintillation detectors (BC501A) were determined strictly by solving the coincidence equations, where the influence from electronics estimated by self coincidence measurement as well as the background had been considered. The result of this work agreed well with the result that was deduced from the traditional method, and it will be helpful to analyze the energy resolution of neutron time of flight spectra measured by using such detectors at CIAE (China Institute of Atomic Energy).     

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Silicon germanium(SiGe) heterojunction bipolar transistor(HBT) on thin silicon-on-insulator(SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology.The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion,which is different from that of a bulk counterpart.A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation.The Early voltage shows a kink with the increase of the reverse base-collector bias.Large differences are observed between SOI devices and their bulk counterparts.The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design,the simulation and the fabrication of high performance SOI SiGe devices and circuits.     

Dopant diffusion and surface morphology of vanadium implanted 4H-silicon carbide

The diffusion behaviours of vanadium implanted p- and n-type 4H-SiC are investigated by using the secondary ion mass spectrometry (SIMS). Significant redistribution, especially out-diffusion of vanadium towards the sample surface is not observed after 1650℃ annealing for both p- and n-type samples. Atomic force microscopy (AFM) is applied to the characterization of surface morphology, indicating the formation of continuous long furrows running in one direction across the wafer surface after 1650℃ annealing. The surface roughness results from the evaporation and re-deposition of Si species on the surface during annealing. The chemical compositions of sample surface are investigated using x-ray photoelectron spectroscopy (XPS). The results of C 1s and Si 2p core-level spectra are presented in detail to demonstrate the evaporation of Si from the wafer and the deposition of SiO₂ on the sample surface during annealing.     

面向靠桥率及道口冲突率的航班-机位指派问题优化模型及其启发式算法研究

在给定航班时刻表条件下,对于进出港航班的机位分配,除了必须满足航班、飞机和机位之间的技术性要求之外,还要考虑尽量提高整个机场的机位利用率,且方便旅客出入港及时、安全和便捷.文章以飞机机型、所属航空公司、客运/货运航班、国内/国际航班等匹配条件为约束条件,以航班-机位分配完成率、靠桥率、道口非冲突率为目标,建立了一个航班...     

GaN FP-HEMTs中击穿电压与电流崩塌的关系

研究了钝化在抑制电流崩塌的同时，会引起HEMT器件击穿电压的下降.而采用场板结构的AlGaN/GaN场板HEMT器件(FP-HEMT)的击穿电压从46V提高到了148V，表明了场板对提高击穿电压有显著作用(3倍以上).接着，比较了FP-HEMT器件与常规HEMT器件，钝化后HEMT器件在应力前后的电流崩塌程度，得出了采用场板结构比之钝化对器件抑制电流崩塌有更明显作用的结论.从理论上和实验上都表明，采用场板结构能够很好解决提高击穿电压与抑制电流崩塌之间的矛盾. 关键词： GaN 场板 击穿电压 电流崩塌     

蒸镀法制备全有机并五苯薄膜场效应晶体管

以全蒸镀方法在真空室内一次性制备了正装结构的全有机并五苯薄膜场效应晶体管。正装结构全蒸镀法有利于简化工艺制备程序,缩小器件尺寸,提高集成度。制备的绝缘层厚度仅为50nm的全有机薄膜场效应晶体管,器件的工作电压降至10V,相同电压下饱和输出电流有了明显提高。筛选适当的有机绝缘材料,改善全有机薄膜场效应晶体管有源层/绝缘层的界面性能,使阈值电压几乎降至0V,场效应迁移率提高了3倍多,输出饱和电流也有了明显的提高。     

Hyperbolic Bending of Vortex Lines with Finite Number and Length in Rotating Trapped Bose-Einstein Condensates

The minimal energy configurations of hyperbolic bending vortex lines in the rotating trapped Bose-Einstein condensates are investigated by using a variational ansatz and numerical simulation. The theoretical calculation of the energy of the vortex lines as a function of the rotation frequency gives self-consistently vortex number, curvature and configuration. The numerical results show that bending is more stable than straight vortex line along the z-axis, and the vortex configuration in the xy-plane has a little expansion by increasing z.     

Synthesis and characterization of p-type boron-doped IIb diamond large single crystals

High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K.The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively.The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique.The electrical properties including resistivities,Hall coefficients,Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method.The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized.With the increase of quantity of additive boron,some high-index crystal faces such as {113} gradually disappear,and some stripes and triangle pits occur on the crystal surface.This work is helpful for the further research and application of boron-doped semiconductor diamond.     

基于知识的X-射线荧光光谱研究进展

本文评述了X-射线荧光光谱中专家系统与知识工程等的研究进展,介绍了光谱定性专家系统、结合模糊逻辑了模式识别算法的光谱解释系统、知识控制系统及相关领域的研究情况。     

极紫外光源及高荷态离子诱导下甲烷的脱氢通道碎裂机制

CH₄广泛存在于行星大气之中,研究CH₄的解离动力学对了解宇宙中气体演化的过程具有重要的价值.目前,CH₄²⁺ →CH₃⁺+H⁺碎裂通道已被大量研究,但针对该通道的解离机制的解释尚存在一定争议.本实验利用高分辨反应显微成像谱仪,开展了25—44 eV的极紫外(extreme ultraviolet, XUV)光电离实验及1 MeV Ne⁸⁺与CH₄的碰撞实验.通过符合测量得到了CH₃⁺和H⁺两种离子的动能,重构了两体解离的动能释放(kinetic energy release, KER),并研究了CH₄²⁺解离产生CH₃⁺+H⁺解离路径下的碎裂动力学过程.在光电离实验中,观测到KER谱上存在4.75 eV和6.09 e...