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Ge2 Sb2 Te5相变薄膜光学及擦除性能研究 总被引:2,自引:1,他引:1
利用蓝绿激光对非晶态Ge2Sb2Te5 相变薄膜进行擦除性能的研究,分别用1000 ns,500 ns,100 ns,60 ns脉宽的蓝绿激光进行实验.结果表明,一定脉宽下,反射率对比度随擦除功率的增加而增大.并且,在1000 ns,500 ns,100 ns,60 ns的激光作用时间范围内,非晶态薄膜均可转变成晶态.对于脉宽为60 ns的蓝绿激光,擦除功率大于4.49 mW以后,薄膜的反射率对比度高于15%,这表明Ge2Sb2Te5相变薄膜在短脉宽、低擦除功率条件下,可具有较高的晶化速度.同时,分析了非晶态和晶态Ge2Sb2Te5相变薄膜的光谱特性,对比研究了780 nm,650 nm,514 nm和405 nm波长处的反射率和反射率对比度,提出了Ge2Sb2Te5相变薄膜用于蓝光光盘的改进方法. 相似文献
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We prepare TeOx thin films by vacuum evaporation of TeO2 powder.It is found that the as-deposited TeOx films can represent a two-component system comprising crystalline tellurium particles dispersed in an amorphous TeO2 matrix.Results of the static recording test show that the TeOx films have good writing sensitivity for shortwavelength laser beam (514.5nm).Primary results of the dynamic recording test at 514.5 nm are also reported.The carrier-to-noise ratio of 30dB is obtained for the disc using a TeOx film as the recording medium.Atomic force microscopy is used to study the microstructure of recorded marks.Micro-area morphology images show that the marks are mechanically deformed,and depressions and bulges have been imaged in the recorded marks,resulting in the scattering of the reading laser beam.The analytical results of transmission electron microscopy show that there is not obvious difference between the phase states of the tellurium particles before and after laser irradiation.Recording mechanisms of the TeOx thin films are discussed based on the experimental results. 相似文献
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Crystallization is induced by pulsed laser irradiation of as-deposited amorphous Ge_2Sb_2Te_5 films. Changes of the irradiated areas have been analyzed with the reflectivity contrast. As laser fluences increasing, the reflectivity contrast increases from 0%-2% to 14%-16%, which indicates the structure of asdeposited films transforms from amorphous to crystalline phases. The process of crystallization driven by the movement and rearrangement of atoms is described. And also the influence of the pulse duration on the threshold of crystallization is discussed, the results show that a lower threshold of crystallization can be produced for as-deposited films irradiated by the laser with short pulse duration. However, by the laser with long pulse duration, crystallization can only be formed with a higher threshold. The crystallization of films by irradiation of laser pulses is studied by Raman spectra. 相似文献
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A novel symmetrical charge transfer fluorene-based compound 2,7-bis (4-methoxystyryl)-9, 9-bis (2-ethylhexyl)-9H-fluorene (abbreviated as BMOSF) was synthesized and its nonlinear absorption was investigated using two different laser systems: a 140-fs, 800-nm Ti:sapphire laser operating at 1-kHz repetition rate and a 38-ps, 1064-nm Nd:YAG pulsed laser operating at 10-Hz repetition rate, respectively. Unique nonlinear absorption properties in this new compound were observed that rise from multiphoton absorption. The nonlinear absorption coefficients were measured to be 6.02×10-3 cm/GW (due to two-photon absorption, exciting wavelength is 800 nm) and 3.6×10-20 cm3/W2 (due to three-photon absorption, exciting wavelength is 1064 nm). This new compound possesses strong fluorescence induced by two-photon absorption and obvious three-photon absorption optical limiting effects. 相似文献
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酞菁铜薄膜的光记录特性 总被引:8,自引:3,他引:8
研究了有机染料酞菁铜(CuPc)真空蒸镀薄膜在可见及近红外区域的吸收光谱和光学常数,发现酞菁铜薄膜在550-750nm波长范围内具有较强的吸收,在静态测试仪上测试了酞菁铜薄膜的光存储记录特性,发现用低功率氦氖激光照样品时薄膜反射率变化较大,在酞菁记录层上覆盖金属反射层将提高写入激光的阈值能量并且增大反射率的对比度。 相似文献
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