稀土化合物Y_(1-x)Gd_xCo_5的磁性分析

在Hamiltonian中考虑了交换作用、自旋-自旋偶极作用、Zeeman作用,应用参数拟合的方法,对稀土化合物Y_(1-x)Gd_xCo_5的磁性实验数据进行了理论分析。这些实验数据包括温度为4.2K和300K的磁化曲线以及自发磁化曲线等。理论计算结果与磁性实验数据相符合,并进一步揭示了Hamiltonian中各种作用对磁性的贡献。     

电子全息对磁隧道结势垒层的研究

利用电子全息显微学方法，从理论和实验两方面，系统研究了磁隧道结势垒层的内势分布，指出了一些在实验过程中应予以注意的实验现象，提出了可能的解决方法. 关键词： 电子全息 磁隧道结 平均内势     

Current-Induced Resistive Effect in Cu/MgO/La0.9Sr0.1 MnO3 Trilayers on SrTiO3 （001） Substrates

Cu/MgO/La0.9Sr0.1MnO3 pillars are fabricated on SrTiO3 （001） substrates by the micro-fabrication patterning processes. Their electric transport properties have been measured in the temperature range from the temperature smaller than the Curie one to 300K. At 125K there emerges abrupt breaks of output voltage in voltage-current （Ⅴ-Ⅰ） curves, corresponding to switching in resistance to metastable states, and finally two closed loops are formed with double threshold biases. Around room temperature the Ⅴ-Ⅰ characteristics are non-ohmic and show some gradual hysteresis when sweeping the current in a round-trip scan. A large current-induced resistive change △R/R0, ～-63.2%, is obtained under a current density of 1.0 × 10^4 Acm^-2. Especially, △ R/ R0 depends linearly on the applied current and is independent of the applied magnetic field. The current-induced resistive effect should be of interest for various applications such as switching and field effect devices.     

成分调制的La1－xSrxMnO3复合隧道结

利用磁控溅射和Sr成分的调制以及原位热处理方法，在10mm×10mm大小的(001) 取向SrTiO_３单晶衬底上制备出三明治结构为La_0.7Sr_0.3MnO３(100nm)/La_0.96Sr_0.04MnO_３ (5nm)/ La0.7Sr_0.3MnO_３ (100nm) 的隧道结外延薄膜，然后再次 利用磁控溅射方法，在三层单晶膜上方继续沉积Ir_２２Mn_７８(15n m)/Ni_７９Fe_２１(5nm)/Pt(20nm)等金属三层膜.最后利用深紫外曝 光和Ar离子束刻蚀等微加工技术，制备出长短轴分别为12和6μm或者8和4μm大小的椭圆形L a_１-xSr_xMnO_３成分调制的复合磁性隧道结.在4.2K和 外加磁场8 T的测试下，La_１-xSr_xMnO_３成分调制的复 合磁性隧道结其隧穿磁电阻(TMR)比值达到3270%, 直接从实验上证实了铁磁性La_{0.7Sr0.3MnO３金属氧化物的自旋极化率（97%）可接近100％，具 有很好的半金属性质. 关键词： １-x}Sr_xMnO_３')" href="#">La_１-xSr_xMnO_３ 半金属 成分调制 复合磁性隧道 结 隧穿磁电阻     

Abnormal magnetoresistance behavior in Nb thin films with rectangular arrays of antidots

Magnetoresistance in superconducting Nb films perforated with rectangular arrays of antidots （holes） is investigated at various temperatures and currents. Normally, the magnetoresistance increases with the increasing magnetic field. In this paper, we report a reverse behavior in a certain range of high fields after vortex reconfiguration transition, where the resistances at non-matching fields are smaller than those in the low field regime. This phenomenon is due to a strong caging effect, in which the interstitial vortices are trapped among the pinned multiquanta vortices. This effect is temperature and current dependent.     

一种数据非易失性、多功能和可编程的自旋逻辑研究进展

自旋(磁)逻辑器件具有数据非易失性、CMOS电路兼容性、操作速度快等优点,是开发计算存储相融合的非冯·诺依曼计算机架构的理想候选方案之一.本文进一步演示基于自旋霍尔效应的自旋逻辑方案.利用自旋霍尔效应不仅能够实现基本的布尔逻辑功能和数据存储功能,还可以利用自旋轨道力矩磁矩翻转的对称性要求、偏置磁场要求等,进一步实现自旋逻辑器件的可编程和多功能特性.利用这些特点,同一自旋霍尔逻辑器件可以实现"与"、"或"、"非"、"与非"、"或非"等功能.因为这些特性,基于自旋霍尔效应的自旋逻辑单元有望成为后续自旋逻辑器件和电路的核心器件,推动后者的持续开发与广泛应用.     

Dependence of Interlayer AF Coupling on Ferromagnetic Layer Thickness in [Pt/Co]5/Ru/[Co/Pt]5 Multilayers

We study magnetization reversal in the interlayer coupled [Pt/Co]5/Ru/[Co/Pt]5 multilayers （MLs） by means of the measurement of extraordinary Hall effect （EHE）. Fitting experimental data to a simple model, we determine the interlayer coupling strength for various thicknesses of the ferromagnetic layers at a fixed Ru spacer thickness. It is found that the dependence of interlayer coupling strength on the Pt layer thickness is much stronger than the previous report in the ferromagnetic/nonmagnetic/ferromagnetic multilayers.     

Magnetization Reversal Mechanism for CoFeB Ferromagnetic Nanotube Arrays

CoFeB nanotube arrays are fabricated in anodic aluminum oxide （AAO） membranes and track etched polycarbonate （PCTE） membranes by using an electrochemical method, and their magnetic properties are investigated by vibrating sample magnetometry. The coercivity Hc and remanent squareness SQ of these CoFeB nanotube arrays are derived from hysteresis loops as a function of angle between the field and tube axis, The He（8） curves for CoFeB nanotube arrays in AAO and PCTE membranes show M-type variation, while they change shape from M to mountain-type as the tube length increases. However, the overall easy axis perpendicular to tube axis does not change with tube length. The different angular dependences are attributed to different magnetization reversal mechanisms.     

自旋电子学材料、物理和器件设计原理的研究进展

文章介绍了作者所在实验室在巨磁电阻(GMR)、隧穿磁电阻(TMR)、庞磁电阻(CMR)和反铁磁钉扎薄膜材料以及单晶金属氧化物、高自旋极化率材料、P-N异质结和纳米环磁随机存储器原理型演示器件设计等研究方面取得的一些重要研究成果和进展.例如:在Al-O势垒磁性隧道结材料体系里,获得室温磁电阻超过80%的国际最好结果;获得两种高性能层状反铁磁钉扎材料体系;发现具有大的电致电阻效应的CMR薄膜材料,并可期望用于电流直接进行磁信息写和读操作的磁存储介质;发现双势垒磁性隧道结中的量子阱态共振隧穿和磁电阻振荡效应,以及纳米器件体系中自旋翻转长度的观测新方法,可用于新型自旋电子学材料及相关器件的人工辅助设计;利用电子自旋共振谱探测和研究了金属氧化物的微观自旋结构和各向异性;在[CoFe/Pt]n磁性金属多层膜中,观测到超高灵敏度的反常霍尔效应;利用纳米环状磁性隧道结作为存储单元,研制出一种新型纳米环磁随机存储器MRAM原理型演示器件.     

混合稀土化合物Y_（1－x）Tb_xCo_（5＋0．1x）的磁性

研究了白旋一轨道作用、晶场作用、交换作用、自旋一自旋偶极作用和Ｚｅｅｍａｎ作用，对稀土化合物Ｙ＿（ｌ－ｘ）ＴｂｘＣｏ＿（５＋０．１ｘ）的磁性实验数据进行了理论分析，理论计算结果与实验符合得较好，并进一步讨论了各种作用对磁性的贡献．