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21.
The Monte Carlo simulation is performed to investigate the quantum
mechanical (QM) effects on heat generation in nano-scale metal oxide
semiconductor field effect transistors (MOSFETs) by solving the
quantum Boltzmann equation. The influence of QM effects both in real
space and $K$ space on the heat generation is investigated. 相似文献
22.
In this work, we investigate strain effects induced by the
deposition of gate dielectrics on the valence band structures in Si
(110) nanowire via the simulation of strain distribution and the
calculation of a generalized 6 × 6k$\cdot$p strained
valence band. The nanowire is surrounded by the gate dielectric. Our
simulation indicates that the strain of the amorphous SiO2 insulator is negligible without considering temperature factors. On
the other hand, the thermal residual strain in a nanowire with
amorphous SiO2 insulator which has negligible lattice misfit
strain pushes the valence subbands upwards by chemical vapour
deposition and downwards by thermal oxidation treatment. In contrast
with the strain of the amorphous SiO2 insulator, the strain of
the HfO2 gate insulator in Si (110) nanowire pushes the valence
subbands upwards remarkably. The thermal residual strain by
HfO2 insulator contributes to the up-shifting tendency. Our
simulation results for valence band shifting and warping in Si
nanowires can provide useful guidance for further nanowire device
design. 相似文献
23.
研究了HfN/HfO2高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中,负偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO2高K栅结构的等效氧化层厚度(EOT)为1.3nm,内含原生缺陷密度较低.研究表明,由于所制备的HfN/HfO2高K栅结构具有低的原生缺陷密度,因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征,而非工艺缺陷引起的;进一步研究表明,该HfN/HfO2高K栅结构中观察到的NBTI与传统的SiO2基栅介质p-MOSFET器件中观察到的NBTI具有类似的特征,可以被所谓的反应-扩散(R-D)模型表征: HfN/HfO2栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理,即在负偏置和温度应力作用下,从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的发生,并由此产生了Si+陷阱在Si衬底界面的积累和H原子在介质层内部的扩散,这种Si+陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 相似文献
24.
Monte Carlo simulation of in-plane spin-polarized transport in GaAs/GaAlAs quantum well in the three-subband approximation 总被引:2,自引:0,他引:2 下载免费PDF全文
We develop a Monte Carlo (MC) tool incorporated with the three-subband
approximation model to investigate the in-plane spin-polarized transport in
GaAs/GaAlAs quantum well. Using the tool, the effects of the electron
occupation of higher subbands and the intersubband scattering on the spin
dephasing have been studied. Compared with the corresponding results of the
simple one-subband approximation model, the spin
dephasing length is reduced four times under 0.125\,kV/cm of driving electric field at
300K by the MC tool incorporated with the three-subband approximation model,
indicating that the three-subband approximation model predicts significantly
shorter spin dephasing length with temperature increasing. Our simulation
results suggest that the effects of the electron occupation of higher
subbands and the intersubband scattering on the spin-dependent transport of
GaAs 2-dimensional electron gas need to be considered when the driving
electric field exceeds the moderate value and the lattice temperature is
above 100K. The simulation by using the MC tool incorporated with the
three-subband approximation
model also indicates that, under a certain driving electric field and
lattice temperature, larger channel widths cause spins to be depolarized faster.
Ranges of the three components of the spins are different for three
different injected spin polarizations due to the anisotropy of spin--orbit
interaction. 相似文献
25.
Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation 总被引:1,自引:0,他引:1 下载免费PDF全文
A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC)
method for solving the quantum Boltzmann equation, including collision
broadening and quantum potential corrections, is developed to extend the MC
method to the study of nano-scale semiconductor devices with obvious quantum
mechanical (QM) effects. The quantum effects both in real space and momentum
space in nano-scale semiconductor devices can be simulated. The effective
mobility in the inversion layer of n and p channel MOSFET is simulated and
compared with experimental data to verify this method. With this method 50nm
ultra thin body silicon on insulator MOSFET are simulated. Results indicate
that this method can be used to simulate the 2D QM effects in semiconductor
devices including tunnelling effect. 相似文献
26.
This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature. 相似文献