Characteristics and properties of metal aluminum thin film prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology

Metal aluminum (Al) thin films are prepared by 2450-MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for thin-film preparation and annealing of as-deposited films related to the surface square resistivity. The square resistivity of as-deposited Al film is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structure analysis we conclude that the square resistivity is determined by neither contaminant concentration nor surface morphology, but by both crystallinity and crystal size in this process.     

烟用有机肥中氯离子含量测定方法的比较

为科学指导烟草栽培中有机肥的施用,以保证烟叶氯含量在适宜范围内,保障烟叶质量,研究比较了离子色谱法、连续流动分析法、硝酸银滴定法和佛尔哈德法测定烟用有机肥中氯离子含量.几种测定氯离子含量的方法比较结果为:离子色谱法和连续流动分析法测定烟用有机肥中氯离子含量的结果均较好,且方法不存在显著差异;硝酸银滴定法对低含量样品的检测偏差较大;佛尔哈德法不适宜用于测定烟用有机肥中氯离子含量.离子色谱法和连续流动分析法的平均回收率分别为102.4％、103.1％,方法检出限分别为0.05mg/L、0.30mg/L,对样品测定的平均相对标准偏差分别为2.41％和2.77％.     

热晕瞬态效应的数值模拟

根据瞬态四维（４Ｄ）热晕程序，研究了激光大气传输中热晕瞬变效应及如何过渡到等压近似下的热晕状态，并与等压近似下４Ｄ热晕程序计算结果作了对比，在大约四倍流体力学时间，瞬态４Ｄ热晕程序计算结果逼近等压近似下的结果；另外，还作了相位补偿计算，对光强每平方厘米几千瓦的情况，在理想的自适应光学系统动力学条件下，瞬变阶段的热畸变能相当有效地实时补偿。     

LBM伪势MRT三维模型GPU并行计算的性能优化

格子Boltzmann方法伪势模型算法中的格点间计算未完全局部化,因此在并行计算时需要更多次的全局内存读写、使用更多数量的寄存器和线程同步操作,从而导致GPU并行计算效率下降.本文针对伪势模型并行计算的局限性,基于三维十五速格子结构的多松弛时间伪势模型,以气液相分离为算例,通过合并访问的方式提高全局内存的读写效率;并提出一种"定向转移"算法,提高格子边界格点获取邻居格点数据的效率;最后探索不同资源分配中各种因素对计算效率的影响,总结最优资源分配的方法.     

Minority Carrier Lifetime in As-Grown Germanium Doped Czochralski Silicon

The minority carrier lifetime of as-grown germanium-doped Czochralski （GCZ） silicon wafers doped with germanium concentrations [Ge]=10^16-10^18 cm^-3 is investigated in comparison with conventional CZ silicon samples. It is found that the lifetime distribution along the ingot changes with the variation of[Ge]. There is a critical value of [Ge] = 10^16 cm^-3 beyond which Ge can obviously influence the lifetime of as-grown ingots. This phenomenon is considered to be associated with the competition or combination between the oxygen related thermal donors （TDs） and electrically active Ge-related complexes. The related formation mechanisms and distributions are also discussed.     

β-delayed neutron decay of 21N

The β-delayed neutron and γ spectra of neutron-rich nucleus ²¹N using β-γ and β-n coincidence measurements were presented in this paper. Thirteen new neutron groups ranging from 0.28 MeV to 4.98 MeV and with a total branching ratio 88.7±4.2% were observed. One γ transition among the excited states of ²¹O, and four γ transitions among the excited states of ²⁰O were identified in the β decay chain of ²¹N. The ungated half-life of 83.8±2.1 ms was also determined for ²¹N.     

Recent advances in MXene: Preparation,properties, and applications

Owing to the exceptional properties of graphene, intensive studies have been carried out on novel two-dimensional (2D) materials. In the past several years, an elegant exfoliation approach has been used to successfully create a new family of 2D transition metal carbides, nitrides, and carbonitrides, termed MXene, from layered MAX phases. More recently, some unique properties of MXene have been discovered leading to proposals of potential applications. In this review, we summarize the latest progress in development of MXene from both a theoretical and experimental view, with emphasis on the possible applications.     

光学消像旋高精度位置控制系统的算法与实现

为了解决周视光电观瞄设备中光学消像旋齿轮传动所带来的误差大、间隙难以控制等不足,本文提出去掉光学消像旋的机械传动,将其变为无机械传动的位置控制系统.结合现代控制理论,在分析了光学消像旋位置控制系统中被控对象模型的基础上,设计以比例-积分-微分控制器为主,非线性控制为辅的融合控制算法.以单片机C8051作为控制核心,编码器作为位置传感器,光电转台方位角度作为控制信号,组成位置控制系统并进行调试、试验测试,测试结果表明其实现的光学消像旋性能优于含有机械传动的光学消像旋性能,最终实现光学消像旋高精度位置控制.     

强激光大气传输中拉曼散射的数值计算

用经典理论推导了强激光大气传输中由于氮的转动受激Ｒａｎｍａｎ散射所造成的对传输功率的限制方程，并计算了光强的阈值，得到了阈光强与激光波长和脉宽的关系；此外，还研究了二维效应和激光脉冲系列通过大气时声子激发的累加效应。     

多孔硅的电致发光

９０年代安发展起来的发光多孔硅材料在发光的全色性，电致发光的效率以及稳定性等方面取得不少重要进展。介绍了几种多孔硅发光二极管结构及有关的电致发光机理，从共进展的速度以及目前已达量子效率＞１０＾－＾４的水平来看，其进入实际应用的前景是乐观的。