InGaN基白光LED光谱特征和结温相关性研究

 以InGaN蓝光+荧光粉的白光LED为研究对象,在恒定环境温度下改变驱动电流,利用光谱仪测得不同LED结温下的光谱曲线。通过分析实验数据,得出光谱特征与该型LED结温的关系。结果表明：InGaN基白光LED蓝光和荧光的峰值波长与结温没有明显的线性关系;蓝光的光谱线宽以及荧光和蓝光峰值强度的比值与结温具有良好的线性关系。     

物理实验教学中思维可视化策略的应用——以沪教版九年级物理“用电流表、电压表测电阻”为例

"用电流表、电压表测电阻"实验是初中物理最重要的且难度较大的学习内容之一,将思维可视化的策略应用于测电阻实验方案的设计、对比分析和方案择优,可以帮助学生在电学实验以及其他复杂问题的思考上得到物理思维能力的提升.     

TC11钛合金光谱分析标准物质的研制

研制了TC11钛合金光谱分析标准物质,采用合理的熔炼和锻造工艺保证了标准物质的均匀性．经方差法和极差法检验,各元素均匀性良好。采用9家权威实验室协作定值,确定的标准值准确可靠,与国内外同类标准物质比对,结果表明,该套标准物质达到了同类标准物质国际先进水平。     

Sodium beta-alumina thin films as gate dielectrics for A1GaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

<正>Sodium beta-alumina（SBA） is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al₂O₃ as the precursors.The X-ray diffraction（XRD） spectrum reveals that the deposited thin film is amorphous.The binding energy and composition of the deposited thin film,obtained from the X-ray photoelectron spectroscopy（XPS） measurement,are consistent with those of SBA.The dielectric constant of the SBA thin film is about 50.Each of the capacitance-voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN.The interface trap density of metal-insulator-semiconductor high-electron-mobility transistor（MISHEMT） is measured to be（3.5～9.5）×10¹⁰ cm^-2·eV^-1 by the conductance method.The fixed charge density of SBA dielectric is on the order of 2.7×10¹² cm^-2.Compared with the AlGaN/GaN metal-semiconductor heterostructure high-electronmobility transistor（MESHEMT）,the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However,the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from—5.5 V to—3.5 V.From XPS results,the surface valence-band maximum（VBM-E_F） of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition.The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum （VBM-E_F）,the reduction of interface traps and the effects of sodium ions,and/or the fixed charges in SBA on the two-dimensional electron gas（2DEG）.     

直流脉冲磁控反应溅射技术制备掺铝氧化锌薄膜的研究

文章采用直流脉冲磁控反应溅射(DCPsputtering)技术,在不同氧氩比(GFR)条件下玻璃衬底上制备了一系列掺铝氧化锌(AZO)薄膜,并利用X射线衍射、扫描电子显微镜和分光光度计从宏观应力和微观晶格畸变的角度研究了GFR对薄膜结构、表面形貌和光学特性的影响.制备的多晶AZO薄膜呈现了明显的ZnO-(103)择优取向,这归结于3小时薄膜沉积过程中伴随的退火引起的薄膜晶面能转变.随着GFR的增大,AZO薄膜内宏观拉应力先增大到最大值,随后宏观压应力随着GFR的继续增大而增大.薄膜中的宏观应力明显随着GFR从拉应力向压应力转变.这与晶格微观畸变诱导的微观应力的研究结果趋势恰恰相反.随着GFR的增加,薄膜在可见光区的平均透射率先增加后减小,薄膜晶粒尺寸诱导的晶界散射是影响薄膜透射率的主导机制.     

HPLC结合紫外光谱法快速定性定量分析四种竹叶黄酮碳苷

采用HPLC结合紫外光谱法,同时测定四种竹叶黄酮碳苷(荭草苷、异荭草苷、牡荆苷和异牡荆苷)。采用Waters XTerra MS C18色谱柱(250mm×4.6mm,5μm),流动相为乙腈和0.5%甲酸水溶液,等梯度洗脱,流速1mL·min-1,柱温30℃,检测波长360nm。建立各个组分在0.1~10.0mg·L-1范围内系列浓度的混合标准工作曲线,其相关系数R2均优于0.999,且在22min内得到较好分离。方法检出限介于0.03~0.07mg·L-1,定量限介于0.04~0.08mg·L-1。分别将标准品与样品中四种黄酮碳苷的紫外光谱(240~400nm)进行比对,荭草苷、异荭草苷、牡荆苷和异牡荆苷相应的光谱曲线形状以及特征吸收波长都表现出高吻合度。取竹叶样品经热回流提取,石油醚萃取及AB-8大孔树脂纯化后,再采用HPLC结合紫外光谱法检测得荭草苷、异荭草苷、牡荆苷和异牡荆苷四种黄酮碳苷相对于竹叶黄酮粉的百分含量分别为13.73,49.68,7.85和30.70mg·g-1,平均回收率为34.90%~87.64%,相对标准偏差为0.41%~10.83%。本方法实现了在较短时间内快速分析竹叶中四种黄酮碳苷,样品稳定,重现性好,为市售竹叶黄酮碳苷的质量控制提供参考。     

光谱分析用标准物质/样品均匀性不同检验规则比较及其不确定度评定

通常光谱分析用标准物质/样品均匀性检验采用方差分析、平均值法或极差法,但在实际应用中,当采用不同的方法时,有时可能得出相反的结论,本文以实例进行剖析说明并计算其不均匀性所引入的标准不确定度,同时对各种均匀性检验规则的特点进行了比较,指出方差分析法及平均值法优点在于不仅其数理统计意义清晰明确,而且便于最终不确定度评定与分析,推荐使用方差分析或平均值法.     

Optical properties of aluminum-doped zinc oxide films deposited by direct-current pulse magnetron reactive sputtering

A series of （103）-oriented aluminum-doped zinc oxide （AZO） films were deposited on glass substrates via direct- current pulse magnetron reactive sputtering at different O2-to-Ar gas flow ratios （GFRs）. The optical properties of the films were characterized using the fitted optical constants in the general oscillator model （which contains two Psemi-Tri oscillators） through the use of measured ellipsometric parameters. The refractive index dispersion data below the interband absorption edge were analyzed using a single-oscillator model. The fitted optical energy gap obtained using the single- oscillator model clearly shows a blue shift, followed by a red shift, as the GFR increases from 0.9/18 to 2.1/18. This shift can be attributed to the change in the free electron concentration of the film, which is closely related to the film stress. In addition, the fitted β value indicates that the AZO film falls under the ionic class. The pbotoluminescence spectrum indicates a photoluminescence mechanism of the direct and wide energy gap semiconductor.     

Strong-field response time and its implications on attosecond measurement

To measure and control the electron motion in atoms and molecules by the strong laser field on the attosecond time scale is one of the research frontiers of atomic and molecular photophysics. It involves many new phenomena and processes and raises a series of questions of concepts, theories, and methods. Recent studies show that the Coulomb potential can cause the ionization time lag (about 100 attoseconds) between instants of the field maximum and the ionization-rate maximum. This lag can be understood as the response time of the electronic wave function to the strong-field-induced ionization event. It has a profound influence on the subsequent ultrafast dynamics of the ionized electron and can significantly change the time—frequency properties of electron trajectory (an important theoretical tool for attosecond measurement). Here, the research progress of response time and its implications on attosecond measurement are briefly introduced.