OPTIMAL CONTROL OF A POPULATION DYNAMICS MODEL WITH HYSTERESIS

This paper addresses a nonlinear partial differential control system arising in population dynamics.The system consist of three diffusion equations describing the evolutions of three biological species:prey,predator,and food for the prey or vegetation.The equation for the food density incorporates a hysteresis operator of generalized stop type accounting for underlying hysteresis effects occurring in the dynamical process.We study the problem of minimization of a given integral cost functional o...     

基于鱼群算法的OFDMA自适应资源分配

针对多用户正交频分多址系统自适应资源分配问题, 提出了一种新的子载波和基于鱼群算法的功率自适应分配算法. 该算法首先对总功率在子载波间均等分布的条件下进行子载波分配,然后引入鱼群算法并根据给出的兼顾用户公平性与系统容量的适应度函数,通过全局搜索实现用户间的功率分配. 仿真结果表明,新算法在保证用户公平性的同时, 还实现了系统总的传输速率最大化. 关键词： 多用户正交频分多址 资源分配 鱼群算法 速率最大化     

Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor

A new analytical model to describe the drain-induced barrier lowering (DIBL) effect has been obtained by solving the two-dimensional (2D) Poisson's equation for the dual-channel 4H-SiC MESFET (DCFET). Using this analytical model, we calculate the threshold voltage shift and the sub-threshold slope factor of the DCFET, which characterize the DIBL effect. The results show that they are significantly dependent on the drain bias, gate length as well as the thickness and doping concentration of the two channel layers. Based on this analytical model, the structure parameters of the DCFET have been optimized in order to suppress the DIBL effect and improve the performance.     

双极晶体管微波损伤效应与机理

结合Si基n⁺-p-n-n⁺外延平面双极晶体管, 考虑了器件自热、高电场下的载流子迁移率退化和载流子雪崩产生效应, 建立了其在高功率微波(high power microwave, HPM)作用下的二维电热模型. 通过分析器件内部电场强度、电流密度和温度分布随信号作用时间的变化, 研究了频率为1 GHz的等效电压信号由基极和集电极注入时双极晶体管的损伤效应和机理. 结果表明集电极注入时器件升温发生在信号的负半周, 在正半周时器件峰值温度略有下降, 与集电极注入相比基极注入更容易使器件毁伤, 其易损部位是B-E结. 对初相分别为0和π的两个高幅值信号的损伤研究结果表明, 初相为π的信号更容易损伤器件, 而发射极串联电阻可以有效的提高器件的抗微波损伤能力.     

栅漏间表面外延层对4H-SiC功率MESFET击穿 特性的改善机理与结构优化

本文提出了一种带栅漏间表面p型外延层的新型MESFET结构并整合了能精确描述4H-SiC MESFET工作机理的数值模型,模型综合考虑了高场载流子饱和、雪崩碰撞离化以及电场调制等效应. 利用所建模型分析了表面外延层对器件沟道表面电场分布的改善作用,并采用突变结近似法对p型外延层参数与器件输出电流(I_ds)和击穿电压(V_B)的关系进行了研究.结果表明,通过在常规MESFET漏端处引入新的电场峰来降低栅极边缘的强电场峰并在栅漏之间的沟道表面引入p-n结内建电场进一步降低电场峰值,改善了表面电场沿电流方向的分布.通过与常规结构以及场板结构SiC MESFET的特性对比表明,本文提出的结构可以明显改善SiC MESFET的功率特性.此外,针对文中给定的器件结构,获得了优化的设计方案,选择p型外延层厚度为0.12 μupm,掺杂浓度为5× 10¹⁵ cm^-3,可使器件的V_B提高33%而保持I_ds基本不变.     

A New Exponential Gravity

We propose a new exponential f（R） gravity model with f（R） = （R - λc） e^λ（c/R）n and n 〉 3, λ ≥ 1, c 〉 0 to explain late-time acceleration of the universe. At the high curvature region, the model behaves like the A CDM model. In the asymptotic future, it reaches a stable de-Sitter spaeetime. It is a cosmologically viable model and can evade the local gravity constraints easily. This model shares many features with other f（R） dark energy models like Hu-Sawicki model and ExponentiM gravity model. In it the dark energy equation of state is of an oscillating form and can cross phantom divide line ωde = -1. In particular, in the parameter range 3 〈 n ≤ 4, λ ～ 1, the model is most distinguishable from other models. For instance, when n = 4, λ = 1, the dark energy equation of state will cross -1 in the earlier future and has a stronger oscillating form than the other models, the dark energy density in asymptotical future is smaller than the one in the high curvature region. This new model can evade the local gravity tests easily when n 〉 3 and λ 〉 1.     

Microwave damage susceptibility trend of bipolar transistor as a function of frequency

We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by high-power microwave (HPM) as a function of frequency. The dependences of the burnout time and the damage power on the signal frequency are obtained. Studies of the internal damage process and the mechanism of the device are carried out from the variation analysis of the distribution of the electric field, current density, and temperature. The investigation shows that the burnout time linearly depends on the signal frequency. The current density and the electric field at the damage position decrease with increasing frequency. Meanwhile, the temperature elevation occurs in the area between the p-n junction and the n-n⁺ interface due to the increase of the electric field. Adopting the data analysis software, the relationship between the damage power and the frequency is obtained. Moreover, the thickness of the substrate has a significant effect on the burnout time.     

椭圆涡环相互作用的离散涡数值模拟

本文发展了三维离散涡模型研究了单个椭圆涡环以及两个沿同一轴线运动涡环的相互作用.首先用两个相向运动圆涡环的碰撞过程与实验的对比验证了模型的有效性,随后研究了单个椭圆涡环的运动,得到了其长短轴交替互换周期的表达式.最后以此为基础分别研究了沿同一轴线两个椭圆涡环的相向碰撞和交替穿越过程,发现碰撞后生成的新涡环变大而形状与涡环的初始形状相似,而在两个椭圆涡环的相随运动中其长短轴交替互换则始终贯穿于交替穿越过程.     

一种基于压缩感知的信道缩短滤波器设计

鉴于使用信道缩短滤波器的系统的复杂度会随着滤波器中非零抽头的增加而快速增大, 运用盲自适应子空间追踪(Blind Adaptive Subspace Pursuit, BASP)算法设计了一种稀疏滤波器来减少非零抽头. 首先在最小均方误差(Minimum Mean Square Error, MMSE)准则下, 将信道缩短问题转化为稀疏滤波器的设计问题, 然后通过加入稀疏度盲估计过程, 使滤波器可以自适应地改变稀疏度, 最后在子空间追踪算法(Subspace Pursuit, SP)的框架下实现非零抽头不连续的稀疏滤波器设计. 仿真结果表明, 设计的稀疏滤波器有效地实现了信道缩短, 运用该滤波器的系统可在更低的复杂度下获得更高的精度.     

涡环发展及其与气泡相互作用的数值模拟

本文发展了三维离散涡模型用于模拟无粘不可压缩涡环的发展及其与气泡的相互作用,涡环被离散为平均分布在其中心线上的球形涡元,由Biot-Sarvart定律叠加每个涡元的诱导速度得到涡环的运动速度.涡环横截面上的涡量分布由二阶高斯分布来近似,而涡环随时间的演化则采用具有二阶精度的预测-校正算法.利用本文发展的三维离散涡模型,首先对圆涡环的发展进行了模拟,运动速度同理论解对比非常吻合,验证了模型的有效性.随后分别模拟了不同强度、不同核径比、不同长短轴比单个椭圆涡环的运动,成功再现了椭圆涡环的长短轴交替互换等现象,得到了不同工况下椭圆涡环随时间发展和演化的定性规律.最后本文将三维离散涡法与气泡运动方程相耦合,对涡环和气泡的相互作用进行了模拟,得到的气泡运动轨迹结果与实验结果非常一致,说明本文提出的三维涡模型可以推广到三维两相的情形.