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本文的目的在于探索一种新的适用于红外热波检测技术的热激励方式——太赫兹(THz)热激励. 文中介绍了THz波周期性热激励的热传导理论模型; 尝试利用返波振荡器(返波管backward wave oscillator, BWO)太赫兹源对一块碳纤维基底吸波涂层板进行周期性THz热激励, 红外热像仪连续观测和记录试件表面温场变化, Canny边缘算法处理热图像显示缺陷; 检测结果与闪光灯脉冲激励的结果进行比较, 讨论了太赫兹波激励红外热波检测技术可能的优势. 实现了THz技术与红外热波无损检测技术的结合. 相似文献
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本文基于理想可压缩流体压力传输方程及增量型TotaILagrangian列式,建立了考虑固体域几何非线性的固液耦合系统有限元方程,并开展了非线性分析工作。本文的方法可用于流体域远大于固体域,从而可仅仅研究固体域非线性响应的情况。由于流体域每个节点仅有一个未知量(压力),故流体域的计算规模得以大大减缩。同时,因为本文方法仅需对固体域进行非线性分析,故显著地简化了固液耦合非线性问题的求解工作。本文的方法亦可用于三维分析。 相似文献
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ALEFINITEELEMENTANALYSISOFTHEOPENINGANDCLOSINGPROCESSOFTHEARTIFICIALMECHANICALVALVE(张建海)(陈大鹏)(邹盛铨)ALEFINITEELEMENTANALYSISOFT... 相似文献
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常温下对低压化学气相沉积制备的纳米硅镶嵌结构的a-SiNx∶H薄膜进行低能量高剂量的C 注入后,在800~1 200℃高温进行常规退火处理。X射线光电子能谱(XPS)及X射线光电子衍射(XRD)等实验结果表明,当退火温度由800℃升高到1200℃后,薄膜部分结构由SiCxNy转变成SiNx和SiC的混合结构。低温下利用真空紫外光激发,获得分别来自于SiNx、SiCxNy、SiC的,位于2.95,2.58,2.29 eV的光致发光光谱。随着退火温度的升高,薄膜的结构发生了变化,发光光谱也有相应的改变。 相似文献
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光学读出红外热成像系统中,焦平面阵列(FPA)反光板的初始弯曲降低了系统的光学检测灵敏度。针对FPA的设计制作,提出了两种降低其反光板初始弯曲的优化设计方案:减薄反光板上金层厚度和制作带加强筋的反光板。在理论分析的基础上,设计制作了单元尺寸为200μm的反光板金层减薄FPA,其反光板曲率半径提高至原来金层未减薄FPA的4.71倍,系统光学检测灵敏度提高了5.2倍;单元尺寸为60μm的反光板带加强筋FPA,其反光板曲率半径提高至原来没有加强筋FPA的4.29倍,系统光学检测灵敏度提高了1.18倍。实验验证了理论分析的结果。 相似文献
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This paper describes a micro thermal shear stress sensor with a cavity underneath, based on vacuum anodic bonding and bulk micromachined technology. A Ti/Pt alloy strip, 2μm×100μm, is deposited on the top of a thin silicon nitride diaphragm and functioned as the thermal sensor element. By using vacuum anodic bonding and bulk-si anisotropic wet etching process instead of the sacrificial-layer technique, a cavity, functioned as the adiabatic vacuum chamber, 200μm×200μm×400μm, is placed between the silicon nitride diaphragm and glass (Corning 7740). This method totally avoid adhesion problem which is a major issue of the sacrificial-layer technique. 相似文献
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The copolymers of chloroethyl methacrylate (CMA), glycidyl methacry-late (GMA), and methyl methacrylate (MMA) were synthesized in benzene solution. Theirbreadths of the molecular weight distributions are 2.1 and 2.3, respectively The ther-mal stability of P(GMA-CMA) is superior to that of P(CMA-MMA). The resolutionsof P(CMA-MMA) and P(GMA-CMA) photoresists were found to be 0.1~0.16μm and0.17 ~0.2μm, respectively. 相似文献
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Upgrading design of the 3B1A beamline for x-ray nanometre lithography of microelectronic devices at BSRF
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Beijing Synchrotron Radiation Facility is a partly dedicated synchrotron radiation source operated in either parasitic or dedicated mode. The 3B1A beamline, extracted from a bending magnet, was originally designed as a soft x-ray beamline for submicro x-ray lithography with critical lateral size just below 1μm in 1988 and no change has been made since it was built. But later the required resolution of x-ray lithography has changed from sub-micrometre to the nanometre in the critical lateral size. This beamline can longer more meet the requirement for x-ray nano lithography and has to be modified to fit the purpose. To upgrade the design of the 3B1A beamline for x-ray nano lithography, a mirror is used to reflect and scan the x-ray beam for the nano lithography station, but the mirror's grazing angle is changed to 27.9mrad in the vertical direction, and the convex curve needs to be modified to fit the change; the tiny change of mirror scanning angle is firstly considered to improve the uniformity of the x-ray spot on the wafer by controlling the convex curve. 相似文献
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