排序方式: 共有82条查询结果,搜索用时 0 毫秒
21.
光学读出式红外成像技术是近年来研究的热点,本文讨论了镜面弯曲对光学检测灵敏度的影响。由双材料微悬臂梁组成的非致冷焦平面阵列通过体刻蚀工艺加工而成,由于残余应力的影响,制成的焦平面阵列将会发生弯曲,应力导致的镜面弯曲将会降低光学探测灵敏度。本文通过傅立叶光学模拟了镜面弯曲对光学探测灵敏度的影响,并通过实验验证了该模型。实验和模拟结果表明,在镜面曲率为0.1mm-1时,光学探测灵敏度将会降低到理想情况的40%。最后我们用这个模型评价了通过表面修饰来提高光学性能的效果。 相似文献
22.
A COMPARATIVE STUDY OF THE OPENING AND CLOSING PROCESS OF TWO TYPES OF MECHANICAL HEART VALVES USING ALE FINITE ELEMENT METHOD 总被引:1,自引:0,他引:1
ACOMPARATIVESTUDYOFTHEOPENINGANDCLOSINGPROCESSOFTWOTYPESOFMECHANICALHEARTVALVESUSINGALEFINITEELEMENTMETHODACOMPARATIVESTUDYOF... 相似文献
23.
24.
25.
26.
本文基于势能~杂交/混合有限元格式,导出了具有分离转动变量的4节点四边形Reissner-Mindlin板元MP4、MP4a和圆柱壳元MCS4.所有这些单元都显示了良好的收敛性;不含有多余机动模式;当趋于薄板/壳极限时,不存在“自锁”现象.本文还指明了在C~0和C~1连续的单元列式中使用的修正泛函,存在相互联系.本文的方法可导出Prathap的一致场列式,也可导出RIT/SRIT的位移协调模型. 相似文献
27.
An optical readout uncooled infrared detector, employing a substrate-free focal plane array with pitch size 60μm, is established. The reflector deformation induced by the stress mismatching of the bi-layer structure is discussed and, in turn, a universal solution to determine both the optical readout sensitivity and the optimal filter position is found. By applying this solution, the optical readout sensitivity for the ideal plane reflector could theoretically increase by 80% as compared with the conventional operation, and the sensitivity loss caused by the reflector deformation can also be reduced to a reasonable level. 相似文献
28.
富硅氮化硅薄膜的荧光发射 总被引:2,自引:0,他引:2
室温下在3.45eV的激光激发下,对950℃温度下淀积的LPCVD富硅的SiNx薄膜中,观测到5个高强度的可见荧光的发射。其峰位位置分别为2.7,2.69,2.4,2.3,2.1eV。通过TEM、IR、XPS等的分析研究表明,该样品为纳米硅镶嵌结构的a-SiNx:H复合膜,分析了其微结构的成因及其与膜内应力之间的相互关系。经过1000~1200℃快速退火(RTA)处理,原PL谱蓝移并只出现了峰位为3.0,2.8eV的两个紫蓝色荧光的发射,用能隙态模型对此结果做了初步的分析和讨论。认为薄膜中纳米硅团簇的密度、尺寸的变化和亚稳态缺陷态对其PL峰以及膜应力起着十分重要的作用。 相似文献
29.
Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
The thickness effect of the TiN capping layer on the time dependent dielectric breakdown(TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer.From the charge pumping measurement and secondary ion mass spectroscopy(SIMS) analysis,it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density.In addition,the influences of interface and bulk trap density ratio N_(it)/N_(ot) are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo(kMC) method.The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. 相似文献
30.
Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes.The reliability of thin dielectric films becomes a limitation to device manufacturing,especially to the breakdown characteristic.In this work,a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up,and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation.It is found that all degradation factors,such as trap generation rate time exponent m,Weibull slope β and percolation factor s,each could be expressed as a function of trap density time exponent α.Based on the percolation relation and power law lifetime projection,a temperature related trap generation model is proposed.The validity of this model is confirmed by comparing with experiment results.For other device and material conditions,the percolation relation provides a new way to study the relationship between trap generation and lifetime projection. 相似文献