Fabrication and Properties of Double-Side Tl2Ba2CaCu2O8 Thin Film on CeO2 Buffered Sapphire Substrate

The double-side Tl2Ba2 CaCu2O8 （Tl-2212） superconducting thin films were fabricated on CeO2 buffered sapphire substrates. The reactive magnetron sputtering technique was used to grow CeO2 buffer thin films on sapphire substrates. Making use of the metal cerium as a sputtering source, the depositing rate is much higher compared with the CeO2 target. The Ti-2212 thin films on CeO2 buffered sapphire substrates were fabricated by adc magnetron sputtering and post-annealing process. The x-ray diffraction indicates that the thin film is pure Tl-2212 phase with the e-axis perpendicular to the substrate surfaces, and epitaxially grown on the CeO2 buffered sapphire. The critical transition temperature Tc is around 106K, the critical current density Jc is around 3.5 MA/cm^2 at 77K, and the microwave surface resistance R8 at 77K and 10 CHz of the film is as low as 390μ Ω.     

Phase Locking and Chaos in a Josephson Junction Array Shunted by a Common Resistance

The dynamics of a Josephson junction array shunted by a common resistance are investigated by using numerical methods. Coexistence of phase locking and chaos is observed in the system when the resistively and capacitively shunted junction model is adopted. The corresponding parameter ranges for phase locking and chaos are presented. When there are three resistively shunted junctions in the array, chaos is found for the first time and the parameter range for chaos is also presented. According to the theory of Chernikov and Schmidt, when there are four or more junctions in the array, the system exhibits chaotic behavior. Our results indicate that the theory of Chernikov and Schmidt is not exactly appropriate.     

Study of the microstructural transformations of borate glass and barium metaborate crystals induced by femtosecond laser

This paper describes the microstructural transformations of borate glass and barium metaborate crystals induced by femtosecond laser. Such structural transformations were verified by Raman spectroscopy. The borate glass is transformed into low temperature (LT) phase of barium metaborate (BaB_2O_4) crystals after being irradiated for 10 min by a femtosecond laser. In addition, after 20 min of irradiation, high temperature (HT) phase of BaB_2O_4 crystals is also produced. Further studies demonstrate that LT phase BaB_2O_4 crystals are formed in the HT phase BaB_2O_4 crystals after femtosecond laser irradiation for 10 s.     

Lattice Boltzmann方法模拟多孔介质Klinkenberg效应

格子Boltzmann数值模拟方法是研究复杂的多孔介质结构特别是Klinkenberg效应的有效方法之一，对处理复杂边值问题尤其有效，用格子Boltzmann方法研究了气流穿越多孔介质问题，并将数值计算结果与实验结果进行了比较，结果表明格子Boltzmann方法是数值模拟气流穿越多孔介质问题的有效方法之一。     

Tl系超导薄膜金属涂层的生长与特性研究

我们研究了Tl-2212超导薄膜在带有YSZ/CeO2缓冲层和带有CeO2/YSZ/CeO2缓冲层的Ni金属RABiTS基带上的生长情况.基带上的缓冲层是采用PLD方法制备的,Tl-2212薄膜的制备采用了磁控溅射和后热处理两步方法.XRD 实验结果表明,Tl-2212薄膜都具有很好的C轴垂直于膜面的织构,并具有双向外延生长特性.在CeO2/YSZ/CeO2/Ni基带上制作的Tl-2212薄膜的Tc达到102.8 K,Jc(77 K,0 T)达到2.6 MA/cm2;在YSZ/CeO2/Ni基带上薄膜Tc可达97.7 K,Jc(77 K,0 T)也可以达到0.45 MA/cm2.     

高温退火对蓝宝石基片的表面形貌和对CeO缓冲层以及Tl-2212超导薄膜长的影响

研究了蓝宝石(1102)基片在不同温度和时间下退火时表面形貌和表面相结构的变化,以及它对CeO2缓冲层和T1-2212超导薄膜生长的影响.原子力显微镜(AFM)研究表明,在流动氧环境中1000℃温度下退火,蓝宝石(1102)的表面首先局部区域形成台阶结构,然后表面形成叠层台阶结构,随着退火时间的延长.表面发生了台阶合并现象,表面形貌最终演化为稳定的具有光滑平台的宽台阶结构.XRD测试表明,通过高温热处理可以大幅度提高蓝宝石基片表面结构的完整性.在1000℃温度下热处理20 h的蓝宝石(1102)基片上可以生长出具有面内取向的CeO2(001)缓冲层.在具有缓冲层的蓝宝石基片上可以制作出高质量c轴织构的外延11-2212超导薄膜,其临界转变温度(Tc)为104.7 K,液氮温度下临界电流密度(Jc)达到3.5 MA/cm2,微波表面电阻R(77 K,10 GHz)约为390μΩ.     

热噪声对约瑟夫森结I-V特性及微波感应台阶的影响研究

采用数值仿真的方法研究了热噪声对约瑟夫森结I-V特性及微波感应台阶的影响。研究表明,热噪声导致约瑟夫森结的I-V特性曲线呈现"圆拱化",也使得微波感应台阶高度减小。得出了取不同约瑟夫森结临界电流和结电阻时,热噪声对台阶的影响规律     

飞秒脉冲通过多层体光栅后的衍射光强分布

基于单层体光栅的耦合波理论和矩阵光学知识,推导出飞秒脉冲通过多层体光栅衍射后的耦合波方程,并由此得到衍射光强谱和瞬时衍射效率表达式.研究结果发现衍射光强谱和瞬时衍射光强分布是与多层体光栅的结构参量,如中间填充层厚度、光栅层厚度、光栅常量及体光栅材料的折射率调制度有关系的.通过调节这些参量,获得了不同形状和不同宽度的衍射脉冲.该结果可用于设计基于多层体光栅的光通信和光脉冲整形器件.     

嵌入到Fabry-Perot谐振腔的双晶约瑟夫森结阵列的阻抗匹配和相位锁定研究

在He等人所做的嵌入到Fabry-Perot谐振腔中约瑟夫森结阵列的微波辐照研究基础上,提出了同时实现约瑟夫森结阵列阻抗匹配和相位锁定的方法,进行了相关的电磁仿真和数值计算.双晶约瑟夫森结阵列被制作在YSZ双晶基片上,同时被嵌入到Fabry-Perot谐振腔内.通过在基片上制作与结阵列集成的串联馈电半波偶极天线阵,并对其结构进行优化实现了结与天线的匹配,数值计算表明结的辐射效率达到94%;利用天线阵辐射场的特征和对模型合理的设计,使Fabry-Perot谐振腔和基片同时谐振在合适的模式下,从而使结阵列与谐 关键词： 约瑟夫森结阵列 阻抗匹配 相位锁定 Fabry-Perot谐振腔     

约瑟夫森结(阵列)与谐振器的耦合效应研究

利用一种新的电路模型系统研究了约瑟夫森结(阵列)与谐振器的耦合效应.以结的电压自锁定台阶幅度ΔI为目标值,得到了谐振电路的电阻R、谐振频率fr对耦合的影响规律,并给出了合理解释;以结阵列的相位互锁定强度IL为目标,研究了IL对锁定电压VL的依赖关系,同时,通过相关计算将其与通常电路模型下得到的结果进行了比较.