光折变光栅在超短脉冲光照射下衍射的研究

利用Kogelnik单色光在体光栅中衍射效率公式推导出超短脉冲光读出稳态光折变体光栅时的衍射光频谱表达式,并在此基础上导出了脉冲光读出时的总衍射光强及总光强衍射效率.研究发现衍射光的频谱分布、总光强及衍射效率与光栅周期Λ、光栅厚度d和读出光脉冲宽度Δτ有密切的关系.通过调整这些参量,光折变光栅可以对入射的超短脉冲光实现不同程度的滤波作用.该结论可用于超短脉冲的整形研究.     

基于上海激光电子γ源的天体核合成关键反应12C(α,γ)16O的反应率研究

正在研制的上海激光电子γ源是MeV量级的高品质γ光束线站，基于该装置可以开展一系列核天体物理实验, 从而更准确的确定各天体核合成反应的反应率. 本文研究了天体核合成中的关键反应¹²C(α,γ)¹⁶O的反应率. 根据多组实验和理论截面数据分别计算了反应率, 并给出了这些反应率计算结果的平均值和统计误差. 根据该结果拟合了理论反应率的解析形式, 确定了新的参数. 进而给出俘获反应¹²C(α,γ)¹⁶O在He燃烧环境下的反应率和误差, 并讨论了电子屏蔽效应对天体反应率的修正.     

FAR-INFRARED AND INFRARED REFLECTIONS OF Tl2Ba2Ca2Cu3O10 FILM

The far-infrared and infrared reflection spectra of Tl₂Ba₂Ca₂Cu₃O₁₀ superconducting film are reported in this paper. It is found there are three sharp reflection edges in both the superconducting and normal states, their positions being near ≈ 150, ≈ 350 and ≈600 cm^-1. We attribute these reflection spectra to the Drude free carriers and a wide mid-infrared absorption band. When the incident angle increases from 7° to 30°, some additional stractures appear in the refiection spectra, which are the A_2u phonon modes vibrating along c-axis.     

利用飞秒脉冲光谱全息实现空域信息向时域信息的转换

在Mazurenko提出的时域超短脉冲光谱全息结构的基础上,提出了改进型的飞秒脉冲光谱全息结构,并推导了当输入脉冲光场中包含时、空分布时光谱全息的记录和再现。结果发现当在光谱全息记录和再现时,如果频谱面上添加空间滤波器,可以实现飞秒脉冲包含的空域信息向时域信息的转换。结论可以应用到超短脉冲整形,超高速光通信和光信息处理等领域。     

光折变透镜

利用光折变Fe:LiNbO3晶体强光伏特效应,本文从理论上讨论用高斯光束入射晶体记录光折变透镜的可能性。并讨论了记录的透焦距与记录光和非相干光光强比之间关系。相对于其它透镜记录方法,利用光伏特效应记录透镜具有不需外加电场的优点,所实现的透镜具有小型化可集成等优点。     

TlBaCaCuO外延膜的光响应

在波长γ＝６３２．８ｎｍ，入射功率约０．８ｍ的Ｈｅ－Ｎｅ激光照射下，对ＴｌＢａ２Ｃａ２ＣｕＯ２（Ｔｌ－２２１２）外延膜的光响应行为进行了实验研究。结果显示：在样品转变温度（Ｔｃ＝１０５．５Ｋ）附近，ＴｌＢａ－ＣａＣｕＯ外延膜的光响应行为表现为辐射热与非辐射热效应共存现象。光响应信号电平与样品温度、偏置电流、及入射光束的调制频率等诸因素有密切关系的关系。实验结果还表明，辐射热与非辐射热效应的响应行为     

二次曲面非球面度计算方法及公式

本文用分析、对比的方法简要叙述了计算非球面度过去沿用公式存在的缺陷,特别是在工艺方面的不适用性,根据实际工艺提出了新的计算方法和公式,并进行了推导。利用这些公式既能准确表达非球面度的概念,也可直接用于指导生产加工。     

守恒方程的差分型格子气方法

给出了守恒型模型方程的差分型格子气方法，通过定义广义的分布函数，将原方程的求解问题化成关于分布函数的差分算法。该方法的意义在于建立格子气方法和差分法之间的联系，是而可以构造真正用于空气动力的格子气模型，使格子敢方法在可压缩领域成为一种实用方法。     

Fabrication and Properties of Double-Side Tl2Ba2CaCu2O8 Thin Film on CeO2 Buffered Sapphire Substrate

The double-side Tl2Ba2 CaCu2O8 （Tl-2212） superconducting thin films were fabricated on CeO2 buffered sapphire substrates. The reactive magnetron sputtering technique was used to grow CeO2 buffer thin films on sapphire substrates. Making use of the metal cerium as a sputtering source, the depositing rate is much higher compared with the CeO2 target. The Ti-2212 thin films on CeO2 buffered sapphire substrates were fabricated by adc magnetron sputtering and post-annealing process. The x-ray diffraction indicates that the thin film is pure Tl-2212 phase with the e-axis perpendicular to the substrate surfaces, and epitaxially grown on the CeO2 buffered sapphire. The critical transition temperature Tc is around 106K, the critical current density Jc is around 3.5 MA/cm^2 at 77K, and the microwave surface resistance R8 at 77K and 10 CHz of the film is as low as 390μ Ω.     

Phase Locking and Chaos in a Josephson Junction Array Shunted by a Common Resistance

The dynamics of a Josephson junction array shunted by a common resistance are investigated by using numerical methods. Coexistence of phase locking and chaos is observed in the system when the resistively and capacitively shunted junction model is adopted. The corresponding parameter ranges for phase locking and chaos are presented. When there are three resistively shunted junctions in the array, chaos is found for the first time and the parameter range for chaos is also presented. According to the theory of Chernikov and Schmidt, when there are four or more junctions in the array, the system exhibits chaotic behavior. Our results indicate that the theory of Chernikov and Schmidt is not exactly appropriate.