具有变视场性能的中红外光谱系统设计与研究

为了用同一设备对目标在中红外光谱段同时实现跟踪和捕获,针对像元尺寸为15μm×15μm的新型大面阵640×512红外探测器,设计了一套大面阵中红外光谱变视场探测成像系统,系统光谱范围为3.7~4.8μm,F数为4.0,窄视场为0.45°,宽视场为0.90°,通过利用机械机构在窄视场结构中切入两片透镜实现宽视场结构,应用二次成像技术不仅有效减小了前固定组透镜口径,而且实现了100%冷光阑匹配,减小了进入红外探测器的杂光。该系统仅采用了锗和硅两种常用的红外材料,为了有效校正系统的轴外像差和高级像差,并保证变视场系统两种结构的齐焦性,系统应用了非球面技术。设计结果表明,奈奎斯特频率33lp·mm-1处,系统的窄视场和宽视场的传递函数值均优于0.2,所有视场畸变均小于0.5%,具有优良的成像性能。在极端温度-35~55℃范围时,该大面阵中红外光谱变视场探测成像系统窄视场结构和宽视场结构的成像质量变化不大,满足使用要求。     

Synergistic influences of titanium,boron, and oxygen on large-size single-crystal diamond growth at high pressure and high temperature

The synergistic influences of boron, oxygen, and titanium on growing large single-crystal diamonds are studied using different concentrations of B₂O₃ in a solvent-carbon system under 5.5 GPa-5.7 GPa and 1300 ℃-1500 ℃. It is found that the boron atoms are difficult to enter into the crystal when boron and oxygen impurities are doped using B₂O₃ without the addition of Ti atoms. However, high boron content is achieved in the doped diamonds that were synthesized with the addition of Ti. Additionally, boron-oxygen complexes are found on the surface of the crystal, and oxygen-related impurities appear in the crystal interior when Ti atoms are added into the FeNi-C system. The results show that the introduction of Ti atoms into the synthesis cavity can effectively control the number of boron atoms and the number of oxygen atoms in the crystal. This has important scientific significance not only for understanding the synergistic influence of boron, oxygen, and titanium atoms on the growth of diamond in the earth, but also for preparing the high-concentration boron or oxygen containing semiconductor diamond technologies.     

极化诱导实现AlGaN薄膜材料中的超高电子浓度(1020cm-3)掺杂

材料的载流子浓度和迁移率是影响器件性能的关键因素, 变温Hall测试结果证明杂质掺杂AlGaN中的载流子浓度和迁移率随温度 降低而减小.然而极化诱导掺杂的载流子浓度和迁移率不受温度变化的影响.以准绝缘 的GaN体材料作为衬底, 在组分分层渐变的AlGaN中实现的极化诱导掺杂浓度 仅仅在10¹⁷ cm^-3数量级甚至更低. 本研究采用载流子浓度为10¹⁶ cm^-3量级的非有意n型掺杂GaN模板为衬底, 用极化诱导掺杂技术在分子束外延生长的AlGaN薄膜材料中实现了高 达10²⁰ cm^-3 量级的超高电子浓度. 准绝缘的体材GaN半导体作衬底时, 只有表面自由电子作为极化掺杂源, 而非有意掺杂的GaN模板衬底除了提供表面自由电子外,还能为极化电场 提供更多的自由电子"源", 从而实现超高载流子浓度的n型掺杂.     

神光Ⅲ原型装置的近背向散射光诊断系统

近背向散射光诊断系统的建立对于精密测量近背向散射光能量份额具有重要意义,它为惯性约束聚变物理实验激光能量与靶耦合效率参数提供了重要的数据支撑。介绍了神光Ⅲ原型装置的近背向散射光诊断系统,包括其主要功能、技术要求、光学设计与机械设计要点。该诊断系统以离轴椭球镜及靶室外的光学传递组为核心元件,具有灵活可靠的支撑和调节结构。在原型装置上使用该系统进行了打靶试验考核,结果表明该系统能进行稳定测量,数据结果符合预期。     

微波场中Josephson结的微波发射与吸收研究

采用数值仿真方法,研究微波场中约瑟夫森结微波感应台阶处的功率特性。发现微波场中约瑟夫森结不止吸收辐射,也发射辐射的情况。得到微波辐照和结电阻对功率吸收和发射的影响规律。结果表明,处于发射功率的状态对应的偏置电流范围占整个台阶总电流范围的比例可以趋于50%。这一发现对约瑟夫森结理论和应用研究具有重要的意义。     

利用飞秒脉冲光谱全息实现空域信息向时域信息的转换

在Mazurenko提出的时域超短脉冲光谱全息结构的基础上,提出了改进型的飞秒脉冲光谱全息结构,并推导了当输入脉冲光场中包含时、空分布时光谱全息的记录和再现。结果发现当在光谱全息记录和再现时,如果频谱面上添加空间滤波器,可以实现飞秒脉冲包含的空域信息向时域信息的转换。结论可以应用到超短脉冲整形,超高速光通信和光信息处理等领域。     

Monte Carlo study of the universal area distribution of clusters in the honeycomb O（n） loop model

We investigate the area distribution of clusters (loops) in the honeycomb O(n) loop model by means of the worm algorithm with n = 0.5, 1, 1.5, and 2. At the critical point, the number of clusters, whose enclosed area is greater than A, is proportional to A-1 with a proportionality constant C. We confirm numerically that C is universal, and its value agrees well with the predictions based on the Coulomb gas method.     

CeO_2缓冲层热处理对Tl-2212薄膜超导特性的影响

本文采用原子力显微镜(AFM)和XRD研究了生长在蓝宝石(11-02)基片上的CeO_2缓冲层在不同的退火温度和退火时间下表面形貌和相结构的变化,以及对Tl-2212薄膜超导特性的影响.AFM和XRD研究表明,CeO_2薄膜在流动氧环境中退火,表面形貌发生显著的变化;CeO_2薄膜在最佳条件下退火后,可获得原子级光滑表面,结晶质量明显提高.实验结果表明,缓冲层的结晶质量和表面粗糙度与Tl-2212薄膜的超导特性密切相关.在经过最佳条件退火后的CeO_2缓冲层上制备了厚度为500 nm无裂纹的Tl-2212超导薄膜,其临界转变温度(T_c)达到107 K,液氮温度下临界电流密度(J_c)为3.9 MA/cm~2(77 K,0 T),微波表面电阻(R_s)约为281 μΩ(77 K,10 GHz).     

反向胶束法制备聚3,4-乙烯二氧噻吩纳米粒子的光电性能和热稳定性

采用聚合和掺杂同时进行的反向胶束体系制备了粒径分散较小的聚3,4-乙烯二氧噻吩(PEDOT)纳米粒子, 利用紫外-可见光光谱(UV-Vis)、X射线衍射(XRD)和扫描电子显微镜(SEM)等分析方法对纳米粒子进行了表征. 实验结果发现, 氧化剂用量、超声处理、聚合温度及掺杂程度对PEDOT纳米粒子的形貌、电性能及热稳定性有不同程度的影响. 根据实验结果对反向胶束法制备PEDOT纳米粒子过程进行优化发现, 在PEDOT纳米粒子聚合过程中, 甲基苯磺酸有效掺杂浓度约为0.17 mol/L时, PEDOT链的取向最规则, 在6.7°, 12.7°, 25°出现衍射峰, 掺杂剂的有效掺杂使得纳米粒子中分子链的取向不同, 并可以获得较高的电导率(>100 S/cm)的PEDOT纳米粒子, 当粒子的尺寸小于20 nm后电导率降低; 热失重法(TG)分析结果表明, PEDOT纳米粒子的热稳定性比普通块材好, 掺杂剂浓度对纳米粒子的热稳定性有一定影响.     

Investigation of fast pitch angle scattering of runaway electrons in the EAST tokamak

This paper reports that an experimental investigation of fast pitch angle scattering(FPAS) of runaway electrons in the EAST tokamak has been performed.From the newly developed infrared detector(HgCdTe) diagnostic system,the infrared synchrotron radiation emitted by relativistic electrons can be obtained as a function of time.The FPAS is analysed by means of the infrared detector diagnostic system and the other correlative diagnostic systems(including electron-cyclotron emission,hard x-ray,neutrons).It is found that the intensity of infrared synchrotron radiation and the electron-cyclotron emission signal increase rapidly at the time of FPAS because of the fast increase of pitch angle and the perpendicular velocity of the energetic runaway electrons.The Parail and Pogutse instability is a possible mechanism for the FPAS.