石墨烯/聚吡咯复合材料与电化学应用研究进展

石墨烯由于其特殊的单原子层结构决定了其具有丰富而新奇的物理化学性质.在发现后的短短十年间,已在物理学、化学、材料科学与工程等领域产生了重要的影响,成为备受瞩目的国际研究前沿和热点.在石墨烯的研究和应用中,最重要的问题就是如何实现其可控制备,组装及功能化应用.近年来,包括本课题组在内的国内外很多研究人员一直在积极探索石墨烯及其功能复合物的制备及应用新途径,其中石墨烯与导电高分子聚吡咯(PPy)的复合是研究的重要内容之一,并且取得了一系列有价值的研究成果.本文对石墨烯/PPy复合结构的可控制备进行了系统的归纳与总结,也讨论了其在催化、驱动器、超级电容器和传感器等电化学应用领域的最新进展,并对相关领域的发展趋势做了展望.     

多层GaAlInP半导体发光材料的双晶衍射分析与拟合

应用双晶衍射仪对MOCVD外延生长所得到的一个GaAlInP双异质结(DH)的单晶多层结构进行测试与分析。应用双晶衍射的动力学理论模拟此样品的摇摆曲线，并结合界面的融合、晶格崎变与缺陷的散射来解释测试结果。对衍射谱的展宽提供了合理的解释，比较肯定地确定了此样品的结构与晶体质量。涉及缺陷对衍射FWHM的展宽的解释与关于缺陷的半动力学衍射理论相比，简单明了，实用于实际的生产检测。并根据分析结论对晶体质量的改进提供技术方案，改进了晶体质量。     

Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers

The advantages of InGaN based light-emitting diodes with InGaN/GaN multilayer barriers are studied.It is found that the structure with InGaN/GaN multilayer barriers shows improved light output power,lower current leakage,and less efficiency droop over its conventional InGaN/GaN counterparts.Based on the numerical simulation and analysis,these improvements on the electrical and the optical characteristics are mainly attributed to the alleviation of the electrostatic field in the quantum wells(QWs) when the InGaN/GaN multilayer barriers are used.     

基于荧光玻璃的高效LED白光技术

采用高温熔融法制备了一定质量比例的SiO_2-YAG∶Ce~(3+)片状荧光玻璃,厚度为0.2 mm,分析其XRD物相、光学和SEM微观结构、PL光谱。结果表明:荧光玻璃保留了晶相,荧光粉颗粒在玻璃基质中均匀分布,荧光玻璃和荧光粉的激发响应关系一致。在465 nm蓝光激发下,发射波长均在535 nm附近,表明荧光玻璃除含有玻璃相,还有荧光粉的物质结构特性。将不同波长蓝光芯片与不同荧光粉含量的荧光玻璃进行封装测试,结果表明:器件的流明效率可达到234.81 lm/W;色温和显色指数均随荧光粉含量增加而单调下降,呈现高色温和低显色指数;荧光粉质量分数从6%增加至15%时,不同波长激发下的色坐标x与y呈现大致相同的线性变化率。采用450 nm激光激发荧光玻璃,测试样品温度变化发现温升较缓,温降迅速,耐热性能优越。实验结果表明,将荧光玻璃用于LED白光照明封装,能实现流明效率和耐热性能的大幅提升,形成良好的白光输出。     

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.     

Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes

In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence(PL) full-width at half maximum(FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence(EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment.     

一种合成聚(2-甲氧基-5-(2′-乙基-己氧基)-对苯乙炔)的新方法

聚对苯乙炔 (ＰＰＶ)及其衍生物是制备聚合物发光二极管的最重要的聚合物之一[1] .这主要是因为它们具有优越的电致发光性能 ,易于合成以及良好的环境稳定性[2 ] .而聚 (2 甲氧基 5 (2′ 乙基 己氧基 ) 对苯乙炔 ) (ＭＥＨ ＰＰＶ)由于其可溶性好 ,发光效率和亮度高 ,在电致发光领域广受关注 .现在有许多ＭＥＨ ＰＰＶ的多步化学合成方法以及电化学合成方法 .但是 ,这些方法常常产率低 ,成本高且产品不纯 .本文报道一种固 液两相反应一步合成分子量大、溶解性好的ＭＥＨ ＰＰＶ的新方法 .1　主要原料对甲氧基苯酚 (纯度≥ 98% ,Ａｌｄｒ…     

Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide (Ta-doped ITO) films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $\sim 5.65\times 10^{ - 5}$~$\Omega \cdot$cm$^{2}$ and show the transmittance of $\sim $98% at a wavelength of 440~nm when annealed at 500~\du. Blue light emitting diodes (LEDs) fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21~V at an injection current of 20~mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20~mA in comparison with that of LEDs with conventional Ni/Au contacts.     

GaN外延片中载流子浓度的纵向分布

采用适合宽禁带半导体材料的电化学电容电压(ECV)分析仪,对掺硅GaN外延片用硫酸逐层进行了精密腐蚀后,在此基础上得到了在进口MOCVD设备上生产的GaN基外延片的载流子浓度纵向分布.探讨了该分布与晶体生长过程及晶体质量的关系,测量分析结果可为生长工艺参数的优化提供参考.还采用主扩散模型对测量结果进行高斯拟合,得出了高温时(1030℃)硅在GaN中的扩散系数,并由此估算了硅在GaN外延片中的扩散宽度.该结果可为GaN外延层结构设计提供参考.     

不同前驱体制备的SO_4~(2-)/AC催化剂在二甲醚直接氧化合成聚甲氧基二甲醚中的反应性能

分别用硫酸、硫酸铵作为前驱体,活性炭(AC)作为载体,采用浸渍法制备了SO_4~(2-)/AC双功能催化剂(SO_4~(2-)离子和AC载体分别提供催化剂的酸性和氧化还原性),考察了其在二甲醚(DME)直接氧化合成聚甲氧基二甲醚(DMMx)反应中的催化性能。结果表明,不同前驱体制备的SO_4~(2-)/AC催化剂表现出显著的催化活性差异。40%H_2SO_4/AC催化剂具有较好的反应活性,DME转化率为8.4%,DMM1-2的选择性达到59.7%,并且没有COx的生成;而在40%(NH_4)_2SO_4/AC催化剂上,反应主要生成了COx,DMM选择性仅2.7%,且无DMM2生成。XRD、BET、NH_3-TPD及O_2-TPD-MS等表征结果显示,H_2SO_4/AC催化剂中适量的弱酸性位和氧化还原性位有利于DME直接氧化合成DMMx。经过SO_4~(2-)修饰的催化剂促进了O2在活性炭表面的活化;前驱体H_2SO_4的加入提高了催化剂表面的弱酸性位数量,而(NH_4)_2SO_4的引入却促使催化剂表面产生中强酸性位。