一种氮烷基化的2-(5-溴-4-甲基噻吩)-咪唑[4，5-f]-[1，10]-菲咯啉三羰基铼(Ⅰ)配合物的聚集诱导荧光增强效应

本文旨在探索基于2-噻吩-咪唑[4,5-f]-[1,10]-菲咯啉（TIP）结构的三羰基铼（Ⅰ）配合物的聚集诱导荧光增强（AIEE）性质。研究了2-（5-溴-4-甲基噻吩）-咪唑[4,5-f]-[1,10]-菲咯啉（1）与不同溴代烷烃之间的氮烷基化反应,并成功制备了3种具有不同氮烷基链结构的TIP衍生物（2a~2c）。氮烷基链引入可以明显提高其在有机溶剂中的溶解性以及不同程度影响TIP中相邻咪唑环和噻吩环的二面角。通过配体2a与五羰基氯化铼的配位反应成功制备了一个具有AIEE性质的三羰基铼（Ⅰ）配合物3。通过对三羰基铼（Ⅰ）配合物3进行X射线单晶衍射的分析,发现该配合物的AIEE活性取决于其松弛的分子堆积结构以及多重的分子间氢键作用。     

Efficient scheme of quantum SWAP gate and multi-atom cluster state via cavity QED

In this paper, we propose a physical scheme to realize quantum SWAP gate by using a large-detuned single-mode cavity field and two identical Rydberg atoms. It is shown that the scheme can also be used to create multi-atom cluster state. During the interaction between atom and cavity, the cavity is only virtually excited and thus the scheme is insensitive to the cavity field states and cavity decay. With the help of our scheme it is very simple to prepare the N-atom cluster state with perfect fidelity and probability. The practical feasibility of this method is also discussed.     

Quantum entanglement in the mode-mode competition system

Considering a two-level atom interacting with the competing two-mode field, this paper investigates the entanglement between the two-level atom and the two-mode field by using the quantum reduced entropy, and that between the two-mode field by using the quantum relative entropy of entanglement. It shows that the two kinds of entanglement are dependent on the relative coupling strength of atom-field and the atomic distribution, and exhibit the periodical evolution. The maximal atom-field entanglement state can be prepared via the appropriate selection of system parameters and interaction time.     

微波等离子体离子束刻蚀技术

自行设计研制了一台微波电子回旋共振等离子体刻蚀系统。该系统采用微波直接通过石英窗口产生右旋圆极化波，由Nd—Fe—B永磁磁钢形成高强磁场，通过共振磁场区域内的电子回旋共振效应产生均匀的高密度等离子体。利用该系统，结合光刻技术和反应离子束刻蚀技术，在以碳氢（CH）等元素为主要组成的有机聚合物（PMMA）表面制备出线宽3-4μm的光栅形图形。原子力显微镜（AFM）测试结果表明，所得图形线条清晰，侧边比较陡直。     

控制成核生长大尺寸C60，C70单晶

通过改进双温区双温度梯度方法，成功地控制成核密度，分别生长出线度可达6mm和5mm的大尺寸C₆₀，C₇₀单晶，并对其表面形貌和晶体结构进行了研究. 关键词：     

液相外延制备InGaAsP/InP掩埋异质结若干工艺问题的讨论

本文对InGaAsP/InP(DC-PBH)激光器掩埋异质结液相外延生长中的几个关键工艺问题进行了研究,提出了获得有利于沟道掩埋生长的理想沟道几何图形的新的腐蚀配方(Br_2/HBr),对二次外延再生长光刻腐蚀面损伤层和有害杂质的去除采用了阳极氧化工艺,同时探索了利用二次外延过程中Zn扩散来控制限制层(3)掺杂的新方法,在研究基础上制造了重现性好且性能良好的1.3μm激光二极管,室温时,阈值电流最低小于25mA,典型值为30mA,在60mA直流电流的驱动下,光输出功率高达12.5mW.     

在氯化十六烷基吡啶存在下水杨基荧光酮与Te（IV）显色反…

研究了阳离子表面活性剂氯化十六烷基吡啶（ＣＰＣ）存在下，ｐＨ４．８的ＨＯＡｃ－ＮａＯＡｃ缓冲介质中，Ｔｅ（ＩＶ）与过量的水杨基荧光酮（ＳＡＦ）形成１：４的稳定佤合物，其最大吸收波长为５３４ｎｍ，表现摩尔吸光系数为１．４７×１０＾５，Ｔｅ（Ⅳ）浓度在０～８μｍ／２５ｍｌ范围内遵守比耳定律，建立了水相测定硒中微量碲的吸光光度法，获得了满意的结果。     

急性低氧条件下人脑电图的变化及低氧耐受能力与高山适应能力的关系

本文研究了低压舱急性低氧条件下,人的脑电图变化、低氧耐受能力与高山适应能力之间的关系,并根据18名受试者的测量结果,证明它们之间关系密切。     

A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-Migned large-area multi-finger configuration power SiGe heterojunction bipolar transistor （HBT） device （with an emitter area of about 880μm^2） is fabricated with 2μm double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVcEo is 10 V and the collector-base junction breakdown voltage BVcBo is 16 V with collector doping concentration of 1 × 10^17 cm^-3 and thickness of 400nm. The device exhibited a maximum oscillation frequency fmax of 35.5 GHz and a cut-off frequency fT of 24.9 GHz at a dc bias point of Ic = 70 mA and the voltage between collector and emitter is VCE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from OdBm to 21 dBm. A maximum output power of 29.9dBm （about 977mW） is obtained at an input power of 18.SdBm with a gain of 11.47dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, fmax and fT are improved by about 83.9% and 38.3%, respectively.     

Induced Diffraction in Phase-Mismatched Second-Harmonic Generation

We show analytically that in phase-mismatched second-harmonic generation, an effective diffraction is induced at the second-harmonic （SH） frequency. Numerical simulation results agree with the analytical predictions. Compared to the case of linear propagation, the effect of the overall diffraction at the SH frequency becomes doubled due to the induced diffraction, which causes an interesting result that the SH beam width will be larger than that of the fundamental field.