All-Optical RZ-to-NRZ Format Conversion with a Tunable Fibre Based Delay Interferometer

All-optical format conversion from return-to-zero （RZ） to non-return-to-zero （NRZ） is demonstrated with temperaturecontrolled all-fibre delay interferometer （DI） at 20 Gb/s. The operation principle is theoretical analysed with the help of numerical simulation and spectra analysis. Theoretical analysis results are consistent well with the experimental results. The format conversion can be achieved with power penalty of 0.54 dB and with output extinction ratio 20 dB.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

Ab Initio Comparative Study of Zincblende and Wurtzite ZnO

By employing the first-principles pseudopotential plane-wave method, the physical properties of zincblende ZnO are investigated in comparison with those of the common wurtzite structure. Zincblende ZnO is predicted to be a direct gap semiconductor. Compared to the wurtzite structure, the zincblende ZnO is characterized by smaller bandgap and pressure coefficient, larger electron effective mass, increasing static dielectric constants and more covalent bonding. Furthermore, the optical properties including dielectric function and energy loss function of zincblende ZnO were obtained and analysed with some features. These aspects reveal promising applications of zincblende ZnO in optoelectronic devices.     

积分中值ξ=ξ(x)的渐近性

对一类不满足g(n)≠0的函数g讨论了第一积分中值定理中ξ=ξ(x)在x→+∞时的渐近性质,并对第二积分中值定理的中值ξ=ξ(x)的渐近性进行了探讨,给出一些相关的结果.     

CaBa-铝酸盐玻璃中Cr4+谱线宽度随温度的变化

测量了15~300K温度范围内57.5%Al_1.5O-35%CaO-7.5%BaO玻璃中四价铬的发射光谱.这种材料中铬离子的能级处于Tanabe-Sugano图上弱场范围中,最低的激发态是³T₂,发射谱是一个宽带.按照单频近似理论拟合低温下的光谱,得到³T₂能级的零声子线位置E_zp=8400cm^-1,声子能量tω=320cm^-1,黄昆因子S=358.尽管单频近似能够较好地描述低温下的线形,发射光谱宽度随温度的变化却与单频近似理论的结果不符.讨论了这种差别的原因,认为可能的解释是与激发态耦合的声子能量大于与基态耦合的声子能量.     

MULTIPLE EQUILIBRIA IN BAROCLINIC ATMOSPHERE BY THERMAL FORCING RELATED TO SUBTROPICAL HIGH

By using Lorenz's moist general circulation model, a nonlinear and dissipative system describing atmospheric motion has been obtained in approximation of Low Order.The multiple equilibria and the transformation between the flow patterns of winter and summer, the latitudinal oscillation of subtropical high by thermal forcing and nonlinear interaction of general circulation are studied in this paper.The results show that the transformation of flow patterns is a discontinuous leaping, and is a process of resetting new flow pattern by rapid exchange inflow field.In the corresponding dry model, we cannot find the latitudinal oscillation of the center of subtropical high.In the moist model, after the thermal effect of water vapor is drawn into the model, nonlinear interaction appears between flow and heating fields.This effect helps to bring about the latitudinal oscillation of subtropical high.     

利用Gupta势研究ConCu13-n (n=1～12)混合团簇的基态结构和熔化行为

利用Gupta多体相互作用势结合遗传算法和分子动力学方法模拟研究了ConCu13-n (n=0～13)单质及混合团簇的基态结构和熔化行为,结果表明：ConCu13-n (n=1~12)混合团簇的基态结构均是在单质Co13、Cu13基态二十面体基础之上的畸变,Co原子先占据中心后占据表面,表面上的Co原子总连接在一起,抱团分布;分析二级差分能和混合能发现Co1Cu12、Co7Cu6具有相对高的稳定性,可视为幻数结构团簇;ConCu13-n (n=1~12)混合团簇的熔点均位于Co13、Cu13单质团簇的熔点之间,且随着Co原子数目的增多总体呈上升趋势,但在n=3时出现反常（熔点降低）,这可归因于Co3Cu10的基态与第一激发态之间的能量差远小于Co2Cu11的相应值。     

AOR方法的最优因子及效果分析

在[1]中提出了解线性代数方程组 A_x=b (1)的AOR方法: x~(m 1)=L_(α,ω)x~(m) ω(I-αL)~(-1)b, (2 L_(α,ω)=(I-αL)~(-1)[(1-ω)I (ω-α)L ωU], (3)其中A=I-L-U,L,U分别为严格下、上三角矩阵。AOR方法主要用于求解椭圆型离散化方程组,故上面可设diag(A)=I。现记B=L U。 当(2),(3)中两个参数取相同值时,AOR方法退化为相应参数的SOR方法。一个自然的问题是:能否在(2),(3)中选取适当的参数α,ω,使相应的AOR方法比最优参     

关于Schr(o)der函数Borel方向的一个应用

本文应用Borel方向和充满圆的关系得到了方程F(z)=R(f(z))的一个充分必要条件,并给出它关于Schr(o)der方程f(sz)=R(f(z))的-个应用,这里s是一常数且|s|＞,R(w)是次数大于2的有理函数.