金属诱导低温制备多晶硅薄膜工艺新进展

多晶硅薄膜由于兼具稳定性、高光敏性、便于大面积沉积等优势成为目前光伏领域的研究热点.本文综述了近几年金属诱导非晶硅薄膜晶化的新工艺,介绍了各种工艺条件对多晶硅薄膜材料的结构、金属含量的调控规律.最后展望了未来的发展趋势.     

600MeV 18O+natPb(厚靶)系统生成Hg同位素独立产额测量(Ⅰ)实验和技术

采用在束气相热色谱的Hg元素分离方法和特殊的探测技术,测量了600MeV ¹⁸O束轰击厚天然铅靶生成的¹⁸⁰Hg至²⁰⁹Hg计20余种放射性Hg同位素产物的独立截面,描写了实验装置、探测技术、γ谱分析以及从递次衰变子体的γ活性来提取Hg同位素生成截面的方法.     

Configuration of the valence neutrons of 17B

The reaction cross section of ~(17)B on ~(12)C target at(43.7±2.4)MeV/u has been measured at the Radioactive Ion Beam Line in Lanzhou(RIBLL).The root-mean-square matter radius(R_(rms))was deduced to be(2.92±0.10)fm,while the R_(rms)of the core and the valence neutron distribution are 2.28 fm and 5.98 fm respectively.Assuming a"core plus 2n"structure in ~(17)B,the mixed configuration of(2s_(1/2))and(1d_(1/2))of the valence neutrons is studied and the s-wave spectroscopic factor is found to be(80±21)%.     

基于铟锡氧化物/Ti复合电极的高亮度碳纳米管场致发射冷阴极

通过制作亲碳性铟锡氧化物(ITO)/Ti复合电极,改善移植型碳纳米管(CNT)冷阴极的导电电极与CNT膜层之间附着性能,从而消除CNT与电极间的界面势垒和非欧姆接触对CNT阴极场发射均匀性和稳定性的影响.采用磁控溅射技术和丝网印刷工艺制作了ITO/Ti基CNT阴极.用X射线衍射仪和场致发射扫描电子显微镜表征CNT阴极结构,结果显示热处理后的ITO/Ti基CNT阴极中可能有TiC相生成,从而使得导电电极与CNT形成有中间物的强作用体系.该体系降低甚至消除电极与CNT之间的界面势垒,增加了CNT与电极间形成欧姆接触的概率.用四探针技术分析电阻率,结果表明ITO/Ti复合电极具有电阻并联效果,CNT阴极导电性能提高.场致发射特性测试表明ITO/Ti基CNT阴极的场致发射电流达到384μA/cm2,较普通ITO基CNT阴极的场致发射电流有显著提高,能够激发测试阳极发出均匀、稳定的高亮度荧光.制作ITO/Ti复合电极是实现场致发射稳定、均匀的低功耗CNT阴极的有效途径.     

计及气动和隐身约束结构综合优化的并行子空间优化方法

通过分析基于响应面的并行子空间优化算法的特点指出并行子空间优化算法学科级优化的作用在于向系统级优化响应面提供性能优良的设计点.在此基础上,建立了不要求学科级优化的改进的并行子空间优化算法,进一步降低了设计优化的计算量,解决了分析模块与优化模块间的接口困难.依据该算法建立了结构、气动和隐身一体化设计优化框架,实现了某无人机机翼计及气动和隐身约束的结构综合优化.     

Alpha Decay of the Neutron-deficient Isotopes 215,216U

The most neutron-deficient isotopes 215;216U were produced in the complete-fusion reaction 180W(40Ar, 4-5n)215,216U. Evaporation residues recoiled from the target were separated in-flight from the primary beam by the gas-filled recoil separator SHANS and subsequently identified on the basis of correlated -decay chains. Two -decaying states were identified in 216U, one for the ground state and the other for the isomeric state with 8+(h9=2f7=2) configuration. The -decay properties for 215;216U and the systematics of 8+ isomeric state in N =124,126 isotones were investigated.     

基于德拜理论的液柱参数彩虹反演算法研究

彩虹技术是一种可同时测量液柱折射率和粒径的实时、非接触方法.建立了定量描述彩虹信号的低频分量与德拜理论(p=2)模拟信号重合程度的目标函数,在此基础上提出一种基于德拜理论(p=2)的液柱参数彩虹技术反演算法.反演算法以经验公式的计算值为初始值,根据目标函数不断寻优获得优化结果,并通过米氏散射理论进一步优化得到反演结果....     

连续变量量子密钥分发多维数据协调算法

数据协调是量子密钥分发的重要组成部分,特别是连续变量量子密钥分发远程化的关键环节。在Leverrier等关于多维协调安全性证明的基础上,给出了面向多维协调的低密度奇偶校验码(LDPC)错误校正算法,考查了该算法的最小收敛信噪比阈值,并估算出基于这种多维数据协调方案的量子密钥分发的最大密钥传输距离,经过协调效率的计算以及噪声分析估算出最大安全密钥量。算法仿真结果表明:Alice和Bob之间的传输距离与分层错误校正协议(SEC)相比,从30km增加到47km左右,译码速度是SEC的4倍左右,密钥传输速率可以达到8.61kb/s。     

Nano-Crystalline Diamond Films with Pineapple-Like Morphology Grown by the DC Arcjet vapor Deposition Method

A nano-crystlline diamond film is grown by the dc arcjet chemical vapor deposition method. The film is characterized by scanning electron microscopy, high-resolution transmission electron microscopy （HRTEM）, x-ray diffraction （XRD） and Ftaman spectra, respectively. The nanocrystalline grains are averagely with 80hm in the size measured by XRD, and further proven by Raman and HRTEM. The observed novel morphology of the growth surface, pineapple-like morphology, is constructed by cubo-octahedral growth zones with a smooth faceted top surface and coarse side surfaces. The as-grown film possesses （100） dominant surface containing a little amorphous sp2 component, which is far different from the nano-crystalline film with the usual cauliflower-like morphology.     

The research on suspended ZnO nanowire field-effect transistor

This paper reports that a novel type of suspended ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I--V measurements. Single-crystalline ZnO nanowires were synthesized by a hydrothermal method, they were used as a suspended ZnO nanowire channel of back-gate field-effect transistors (FET). The fabricated suspended nanowire FETs showed a p-channel depletion mode, exhibited high on--off current ratio of ～10⁵. When V_DS=2.5 V, the peak transconductances of the suspended FETs were 0.396 μS, the oxide capacitance was found to be 1.547 fF, the pinch-off voltage V_TH was about 0.6 V, the electron mobility was on average 50.17 cm²/Vs. The resistivity of the ZnO nanowire channel was estimated to be 0.96× 10²Ω cm at V_GS = 0 V. These characteristics revealed that the suspended nanowire FET fabricated by the photolithography process had excellent performance. Better contacts between the ZnO nanowire and metal electrodes could be improved through annealing and metal deposition using a focused ion beam.