特征为奇数的广义正交图的自同构

本文确定了特征为奇数的有限域F_q上广义正交图ГGO_(2v+δ)(q,m,S)的自同构,其中1mv.     

Image charge effect on the light emission of rutile TiO_2(110) induced by a scanning tunneling microscope

The plasmon-enhanced light emission of rutile TiO_2(110) surface has been investigated by a low-temperature scanning tunneling microscope(STM). We found that the photon emission arises from the inelastic electron tunneling between the STM tip and the conduction band or defect states of TiO_2(110). In contrast to the Au(111) surface, the maximum photon energy as a function of the bias voltage clearly deviates from the linear scaling behavior, suggesting the non-negligible effect of the STM tip on the band structure of TiO_2. By performing differential conductance( dI/dV) measurements, it was revealed that such a deviation is not related to the tip-induced band bending, but is attributed to the image charge effect of the metal tip, which significantly shifts the band edges of the TiO_2(110) towards the Femi level(E_F) during the tunneling process. This work not only sheds new lights onto the understanding of plasmon-enhanced light emission of semiconductor surfaces, but also opens up a new avenue for engineering the plasmon-mediated interfacial charge transfer in molecular and semiconducting materials.     

B(X)上保持约当积的固定点的满射

设B(X)是维数大于等于3的复Banach空间X上有界线性算子全体构成的代数.设A∈B(X),若Ax=x,则称x∈X是算子A的固定点.Fix(A)表示A的所有固定点的集合.本文刻画了B(X)上保持算子的Jordan积的固定点的满射.     

中国聚变工程实验堆大功率混合直流开关概念设计

中国聚变工程实验堆中的超导线圈失超保护开关要求的额定参数达到了10 kV/±100 kA，针对该运行参数提出了一种混合式直流开关。承担稳态通流的机械开关采用了三级触头结构，可以降低固态开关的通流时间。双向固态开关的阀串采用二极管桥与IGBT组合的形式，结温分析证明可以提高器件的流通电流限制，并对该基本单元拓扑进行了大电流开断实验，验证了该设计的可行性。     

非Fourier温度场分布的奇摄动解

应用非Fourier热传导定律构建了单层材料中温度场模型，即一类在无界域上带小参数的奇摄动双曲方程，通过奇摄动展开方法，得到了该问题的渐近解.首先应用奇摄动方法得到了该问题的外解和边界层矫正项，通过对内解和外解的最大模估计和关于时间导数的最大模估计以及线性抛物方程理论，得到了内外解的存在唯一性，从而得到了解的形式渐近展开式.通过余项估计，给出了渐近解的L2估计，得到了渐近解的一致有效性，从而得到了无界域上温度场的分布.通过奇摄动分析，给出了非Fourier 温度场与Fourier 温度场的关系，描述了非Fourier温度场的具体形态.     

固相萃取-超高效液相色谱-串联质谱法测定虾类中4-己基间苯二酚

采用固相萃取-超高效液相色谱-串联质谱法测定虾类中4-己基间苯二酚的含量。样品的匀浆(5.00g)用甲醇提取两次(每次10 mL),合并提取液。移取提取液5 mL,并用水定容至10mL。此溶液通过PRIME HLB固相萃取柱净化,用含1%(质量分数)氨水的甲醇-乙腈(9+1)溶液4mL洗脱,洗脱液于40℃水浴中氮气吹至近干,残留物用乙腈(6+4)溶液1 mL溶解。以Waters Acquity UPLC BEH C_(18)色谱柱为分离柱,以不同体积比的水和乙腈的混合液为流动相进行梯度洗脱,采用电喷雾负离子源和多反应监测模式检测。4-己基间苯二酚的质量浓度在1.0~100.0μg·L~(-1)内与其对应的峰面积呈线性关系,检出限(3S/N)为0.25μg·kg~(-1)。以空白样品为基体进行加标回收试验,所得回收率为70.1%~88.6%,测定值的相对标准偏差(n=6)为3.8%~6.4%。     

Improved performance of Au nanocrystal nonvolatile memory by N_2-plasma treatment on HfO_2 blocking layer

The N_2-plasma treatment on a HfO_2 blocking layer of Au nanocrystal nonvolatile memory without any post annealing is investigated. The electrical characteristics of the MOS capacitor with structure of Al–Ta N/HfO_2/Si O2/p-Si are also characterized. After N_2-plasma treatment, the nitrogen atoms are incorporated into HfO_2 film and may passivate the oxygen vacancy states. The surface roughness of HfO_2 film can also be reduced. Those improvements of HfO_2 film lead to a smaller hysteresis and lower leakage current density of the MOS capacitor. The N_2-plasma is introduced into Au nanocrystal(NC) nonvolatile memory to treat the HfO_2 blocking layer. For the N_2-plasma treated device, it shows a better retention characteristic and is twice as large in the memory window than that for the no N_2-plasma treated device. It can be concluded that the N_2-plasma treatment method can be applied to future nonvolatile memory applications.