橡胶减摩抗磨改性研究进展

橡胶因具有优异的理化性质及独特的力学性能而广泛应用于国防、航空航天、医用、交通、建筑及机械电子等领域,起到减震、缓冲和密封等作用.摩擦学性能是橡胶材料的重要指标之一,然而橡胶自身具有较高的摩擦系数,在一些应用领域,如活塞杆、阀轴(杆)密封、轮胎和水润滑轴承等,因黏连、摩擦生热、机械磨损及磨粒磨损等原因导致性能下降甚至失效.本文中首先综述了橡胶摩擦及磨损理论,随后从橡胶基体改性、橡胶表面处理以及表面织构化3个方面介绍了橡胶减摩抗磨改性方法的研究进展,并对其发展前景进行了展望.     

真空退火对L1_0-CoPt薄膜结构、磁性及表面形貌的影响

本文利用磁控溅射的方法制备了L1_0-CoPt薄膜,研究了不同退火条件对薄膜结构、磁性以及表面形貌的影响.通过优化退火温度、保温时间以及升温速率,制备出了具有大矫顽力、高矩形比、粗糙度小的垂直各向异性L1_0-CoPt薄膜.实验发现,较高的退火温度有利于克服CoPt薄膜有序化转变所需要的能量,同时适当延长退火时间可以提高CoPt薄膜的扩散系数,从而促使无序相fcc转化为L1_0有序相fct结构.此外,退火过程中减缓升温速率可以有效减小薄膜粗糙度,从而形成平整连续膜.     

小组合作学习在“化学化工专业英语”实践教学活动中存在的问题及解决策略

小组合作学习作为一种主动学习模式被引入到化学化工专业英语课程教学活动中,在具体教学实践中往往存在诸如分组随意、参与度低、分工不明确、缺乏有效评价、流于形式等诸多问题。对采用小组合作学习的班级进行问卷调查并分析统计结果,在此基础上提出合理分组、细致分工、适当指导、及时评价等解决方案,以期对小组合作学习实践教学活动提供相应的理论依据和实践基础。     

气相色谱-质谱法测定食品中黄樟素及其衍生物含量

建立了调味制品(调味料、番茄酱、酱油、花椒)、饮料(碳酸饮料、乳饮料、果汁)、肉制品(香肠、肉罐头、肉汤)、水果制品(果冻、果酱)、水产品(干鱼肉、鱼罐头、鱼肉泥)、小吃类(油炸薯片、糖果、巧克力)等18种食品中黄樟素、异黄樟素、二氢黄樟素含量的分析方法。样品在氯化钠盐析作用下,经二氯甲烷-乙腈提取,无水硫酸钠-氟罗里硅土柱吸附极性物质和水分。复杂样品需再经PRi ME HLB固相萃取柱(SPE)净化,5%苯基-95%甲基聚硅氧烷毛细管气相色谱柱分离,选择离子质谱技术监测,内标法定量。在最佳实验条件下,3种黄樟素在25~5 000μg/kg范围内呈良好的线性关系,相关系数(r2)≥0.9981,方法检出限(LOD)和定量下限(LOQ)分别为20μg/kg和50μg/kg,3个加标水平的回收率为77.6%~100.9%,相对标准偏差(RSD)为3.7%~13.6%。多种实际样品的测定结果表明,该方法准确可靠,适用于食品中3种黄樟素及其衍生物的定量和定性分析。     

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding- gate （JLDMCSG） metal-oxide-semiconductor field-effect transistors （MOSFETs） is proposed. It is derived by solving the two-dimensional Poisson＇s equation in two continuous cylindrical regions with any simplifying assumption. Using this analytical model, the subthreshold characteristics of JLDMCSG MOSFETs are investigated in terms of channel electro- static potential, horizontal electric field, and subthreshold current. Compared to junctionless single-material cylindrical surrounding-gate MOSFETs, JLDMCSG MOSFETs can effectively suppress short-channel effects and simultaneously im- prove carrier transport efficiency. It is found that the subthreshold current of JLDMCSG MOSFETs can be significantly reduced by adopting both a thin oxide and thin silicon channel. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical simulator ISE TCAD.     

La-doped BiFe03： Synthesis and multiferroic property study

A new sol-foam-gel method was developed to fabricate La-doped BiFeO3 muttiferroic materials. It was demonstrated that a gradual increase in the content of La-doped into BiFeO3 results in its structure changing from rhombohedral to orthorhombic. A study of other property changes indicates that La-doping in BiFeO3 enhances its ferromagnetism and ferroelectricity. A temperature-dependent magnetization study suggests that the magnetic property of La-doped BiFeO3 samples varied from antiferromagnetic to ferromagnetic as the content of La-doped into BiFeO3 increased from 0 to 20%. Unique temperature-dependent zero field cooling （ZFC） and field cooling （FC） magnetization behaviors were observed in 15% La-doped BiFeO3 -- its ZFC temperature-dependent magnetization being ferromagnetic and its FC temperature- dependent magnetization being antiferromagnetic. A possible mechanism of such an interesting M-T behavior is discussed.     

基于多源信息融合的果树冠层三维点云拼接方法研究

构建了基于彩色相机和光学混合探测(PMD)相机的多源视觉系统,旨在建立具有真彩色信息的果树冠层三维点云模型,为果树的剪枝、疏花疏果和采摘等果园管理提供技术支持。针对PMD相机获取的目标场景三维点云,结合PMD相机的幅度图像和密度聚类算法提取有效点,利用前期研究的图像配准方法得到多源图像之间的坐标转换关系,完成了果树冠层多源信息融合。通过主成分分析法得到较好的初始位置,再采用最近点迭代算法,实现两组三维点云之间的拼接。对自然场景下的开花期和坐果期的果树冠层三维点云拼接方法进行了实验验证,结果表明多视角三维点云拼接误差为2.62cm,可以较好地弥补单个角度下拍摄造成的数据缺失,实现了果树冠层完整的三维显示。     

性能样机模型统一读取及显示系统实现

航天复杂产品研制过程中,形成了大量以CAE有限元模型或实物试验数据形式存在的性能样机模型;性能样机模型统一读取及显示方法,可以支持Nastran、Ansys、Abaqus、Fluent等多种CAE有限元软件数据和实物试验数据文件的直接读取,并支持根据用户需求进行其他格式文件的定制开发,实现了对性能样机模型统一读取和显示的通用化;经测试该系统不需依赖及安装商用CAE软件,文件压缩比可达到2%~30%,易于在PDM、SDM、TDM等外部系统中进行集成使用,能够充分使用产品研制过程中产生的各类数据,为大系统的协同研发打下基础。     

非晶InGaZnO薄膜晶体管驱动OLED像素电路的仿真研究

为解决非晶InGaZnO薄膜晶体管(a-IGZO TFT)因其阈值电压漂移而导致的OLED电流衰减的问题,本文研究了基于a-IGZO TFT的有源矩阵有机发光显示(AMOLED)像素电路的阈值电压补偿问题。利用实验室制备的a-IGZO TFT器件进行参数提取后建立的SPICE仿真模型并进行仿真计算,对电压驱动型2T1C和4T1C的像素电路进行稳定性的比较研究,证明了4T1C电路对阈值漂移有非常好的补偿效果,并指出增加存储电容值和驱动TFT的宽长比可有效提高OLED电流的保持能力。     

Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells

Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.