Fabrication of one-dimensional Fe3O4/P(GMA-DVB) nanochains by magnetic-field-induced precipitation polymerization

One-dimensional (1D) magnetic Fe(3)O(4)/P(GMA-DVB) peapod-like nanochains have been successfully synthesized by magnetic-field-induced precipitation polymerization using Fe(3)O(4) as building blocks and P(GMA-DVB) as linker. The Fe(3)O(4) microspheres without surface modification can be arranged with the direction of the external magnetic field in a line via the dipolar interaction between Fe(3)O(4) microspheres and linked permanently via P(GMA-DVB) coating during precipitation polymerization. The length of peapod-like nanochains can be controlled by magnetic field intensity, and the thickness of polymer shell can be tuned by the amount of monomers. Magnetic measurement revealed that these 1D peapod-like nanochains showed highly magnetic sensitivity. In the presence of magnetic field, 1D magnetic Fe(3)O(4)/P(GMA-DVB) peapod-like nanochains can be oriented and aligned along the direction of external magnetic field.     

Nuclear magnetic resonance investigation of dynamics in poly(ethylene oxide)-based lithium polyether-ester-sulfonate ionomers

Nuclear magnetic resonance spectroscopy has been utilized to investigate the dynamics of poly(ethylene oxide)-based lithium sulfonate ionomer samples that have low glass transition temperatures. (1)H and (7)Li spin-lattice relaxation times (T(1)) of the bulk polymer and lithium ions, respectively, were measured and analyzed in samples with a range of ion contents. The temperature dependence of T(1) values along with the presence of minima in T(1) as a function of temperature enabled correlation times and activation energies to be obtained for both the segmental motion of the polymer backbone and the hopping motion of lithium cations. Similar activation energies for motion of both the polymer and lithium ions in the samples with lower ion content indicate that the polymer segmental motion and lithium ion hopping motion are correlated in these samples, even though lithium hopping is about ten times slower than the segmental motion. A divergent trend is observed for correlation times and activation energies of the highest ion content sample with 100% lithium sulfonation due to the presence of ionic aggregation. Details of the polymer and cation dynamics on the nanosecond timescale are discussed and complement the findings of X-ray scattering and quasi-elastic neutron scattering experiments.     

AlxGa1-xN/GaN异质结二维电子气磁输运性质研究

在1.5K低温和0～9T的高磁场下研究了AlGaG/GaN异质结二维电子气的磁输运性质.实验结果在4块样品中都观察到了Shubnikov-da HaSS振荡的双周期行为.表明异质结的三角势阱中有两个子带被电子占据.通过电子子带占据时电子浓度分配的线形行为得到第二子带被占据的阈值浓度为7.2×1012cm-2.通过对不同样品量子散射时间和输运迁移率的研究,说明在1.5K下远程离化施主散射在量子散射时间中起主要作用.     

Reference-frame-independent quantum key distribution of wavelength division multiplexing with multiple quantum channels

Reference-frame-independent quantum key distribution (RFI-QKD) can allow a quantum key distribution system to obtain the ideal key rate and transmission distance without reference system calibration, which has attracted much attention. Here, we propose an RFI-QKD protocol based on wavelength division multiplexing (WDM) considering finite-key analysis and crosstalk. The finite-key bound for RFI-QKD with decoy states is derived under the crosstalk of WDM. The resulting secret key rate of RFI-QKD, which is more rigorous, is obtained. Simulation results reveal that the secret key rate of RFI-QKD based on WDM is affected by the multiplexing channel number, as well as crosstalk between adjacent channels.     

用肖特基电容电压特性数值模拟法确定调制掺杂AlxGa1-xN/GaN异质结中的极化电荷

研究发展了用肖特基电容电压特性数值模拟确定调制掺杂Al_xGa_1-xN/GaN异质结中极化电荷的方法.在调制掺杂的Al_0.22Ga_0.78N/GaN异质结上制备了Pt肖特基接触,并对其进行了C-V测量.采用三维费米模型对调制掺杂的Al_0.22Ga_0.78N/GaN异质结上肖特基接触的C-V特性进行了数值模拟,分析了改变样品参数对C-V特性的影响.利用改变极化电荷、n-AlGaN 关键词： xGa_1-xN/GaN异质结')" href="#">Al_xGa_1-xN/GaN异质结 极化电荷 电容电压特性 数值模拟     

MOCVD生长的InN薄膜中In分凝现象

利用金属有机物化学气相淀积(MOCVD)方法不同生长条件下在c面蓝宝石衬底上制备了InN薄膜,通过不同的物理表征手段研究了InN薄膜的物理性质,结果表明:合适的生长温度可以抑制InN薄膜表面分凝现象。研究认为较低的生长温度使作为N源的NH3分解率较低,In—N的成键可能性小,导致In在表面聚集出现分凝;而较高生长温度时,InN薄膜中In—N键能较小,易发生断裂,反应活性较强的N和H原子逸离薄膜表面,In滞留在薄膜表面也导致In分凝现象的出现。相对于表面分凝的样品,未出现表面分凝的样品的薄膜晶体质量和表面形貌也得到了提高。同时,通过Raman散射谱研究了晶格振动E2声子模的应力效应。     

Stimulus-responsive water soluble synthetic nanographene

Nanographenes(NGs)are exceptionally hydrophobic.They are insoluble in water,preventing the exploration and utilization of their photophysical properties under aqueous conditions.This work discloses an atomically precise water-soluble synthetic NG1,featuring a 2 nm sp² carbon skeleton appended with 12 branched triethylene glycol chains.It synergistically combines low critical solution temperature(LCST)behavior and a photothermal effect to create the first thermo-and photo-responsive atomically precise NG functioning in an aqueous solution.The LCST behavior can be attributed to a delicate balance of hydrophobic-hydrophilic interactions,providing a sensitive thermal response to changes over a temperature range of physiological interest(close to 37℃).Moreover,1 has considerable photothermal conversion capability,with irradiation of 1 in water by red or near infrared light increasing the solutions temperature to above the clouding point within seconds,leading to a reversible clear-to-turbid transition over many cycles without evident fatigue.     

AlGaN/GaN异质结构中极化与势垒层掺杂对二维电子气的影响

从Ⅲ族氮化物中压电极化对应变弛豫度的依赖关系出发，通过自洽求解薛定谔方程和泊松方程,分别研究了自发极化、压电极化和AlGaN势垒层掺杂对AlxGa1-xN/GaN异质结构二维电子气的浓度、分布、面密度以及子带分布等性质的影响.结果表明：二维电子气性质强烈依赖于极化效应,不考虑AlGaN势垒层掺杂，当Al组分为0.3时，由极化导致的二维电子气浓度达1.6×10--13cm-2,其中压电极化对二维电子气贡献为0.7×10-13cm-2，略小于自发极化的贡献(0.9×10-13cm-2)，但为同一数量级，因而通过控制AlGaN层应变而改变极化对于提高二维电子气浓度至关重要. AlGaN势垒层掺杂对二维电子气的影响较弱, 当掺杂浓度从1×10-17增加到1×10-18cm-3时，二维电子气面密度增加0.2×10-13cm-2. 关键词： AlxGa1-xN/GaN 异质结构 二维电子气 自发极化 压电极化     

Boron and nitrogen dual-doped carbon as a novel cathode for high performance hybrid ion capacitors

A high performance hybrid ion capacitors has been developed by using B, N dual-doped 3D superstructure carbon cathode and prelithiated graphite anode.