Strain and Phonon Confinement in Self－Assembled Ge Quantum Dot Superlattices Superlattices ＊

Raman scattering measurements were carried out in self-assembled Ge quantum dot superlattices grown bymolecular beam epitaxy. The characteristics of the Ge-Ge, Si-Ge, Si-SiLoc and Si-Si peaks were investigated,especially the Ge-Ge optical phonon frequency shift was emphasized, which was tuned by the phonon confinementand strain effects. The experimentally observed frequency shift values of the Ge-Ge peak frequency caused byoptical phonon confinement and strain in Ge quantum dots were discussed with quantitative calculations.     

Comparison study of GaN films grown on porous and planar GaN templates

The GaN thick films have been grown on porous GaN template and planar metal-organic chemical vapor deposition(MOCVD)-GaN template by halide vapor phase epitaxy(HVPE). The analysis results indicated that the GaN films grown on porous and planar GaN templates under the same growth conditions have similar structural, optical, and electrical properties. But the porous GaN templates could significantly reduce the stress in the HVPE-GaN epilayer and enhance the photoluminescence(PL) intensity. The voids in the porous template were critical for the strain relaxation in the GaN films and the increase of the PL intensity. Thus, the porous GaN converted from β-Ga2O3 film as a novel promising template is suitable for the growth of stress-free GaN films.     

基于光谱响应函数的遥感图像融合对比研究

遥感图像融合是一个十分重要的问题,目前已出现了很多融合方法.一些现有方法可以从高空间分辨率全色数据中提取细节特征,并注入到低空间分辨牢多光谱数据中,同时尽可能保持多光谱数据的光谱特性.现有方法一般都不能利用遥感成像系统的物理信息,因此可能导致融合结果发生严重的光谱扭曲.该文采用适当的遥感图像融合模型对图像融合问题进行分解,将融合问题归结为空间细节调制参数构建与空间细节信息提取两个子问题,在对传感器光谱响应函数(SRF)的分析基础上,构建合理的空间细节调制参数.依据对现有方法的分类,文章将三种基于SRF的空间细节调制参数构建方法,与高斯高通滤波提取的空间细节信息结合,产生三种基于SRF的遥感图像融合方法.这些方法在Ikonos数据上进行了试验和分析,并与GS和HPM方法进行对比.     

N 掺杂ZnO薄膜的接触特性

氧化锌(ZnO)是一种直接带隙半导体材料,室温下带隙为3.37eV,激子束缚能为60meV。ZnO因其优越的光电特性在高亮度蓝紫光发光器件、紫外探测器件和短波长激子型激光器等方面具有广阔的应用前景。而要实现大功率的光电器件,稳定可靠的欧姆接触是必需的。研究了氮气氛条件下,不同温度快速退火对氮掺杂ZnO样品的电学性质以及Ni/Au与其接触特性的影响。原生样品表现为弱的肖特基接触,适当温度退火后,由肖特基转成了欧姆接触,650℃退火后得到最小比接触电阻率8×10-4Ω·cm2。霍尔测量表明550℃快速退火后,样品的导电类型由p型转变成了n型。采用AES和GXRD分别研究了不同退火温度下Au、Ni、Zn、O的深度分布变化及退火后所生成的合金相。实验结果表明,退火所导致的薄膜电学性质的变化以及界面态和表面态的增加是接触特性变化的原因。     

High-field-induced electron detrapping in An AlGaN/GaN high electron mobility transistor

A step stress test is carried out to study the reliability characteristics of an AlGaN/GaN high electron mobility transistor(HEMT).An anomalous critical drain-to-gate voltage with a negative temperature coefficient is observed in the stress sequence,beyond which the HEMT device starts to recover from degradation induced by early lower voltage stress.While the performance degradation featuring the drain current slump stems from electron trapping in the surface or bulk states during low-to-medium bias stress,the recovery is attributed to high field induced electron detrapping.The carrier detrapping mechanism could be helpful for lessening the trapping-related performance degradation of a GaN-based HEMT.     

Photocurrent properties of high—sensitivity GaN ultraviolet photodetectors

GaN epilayers were grown on sapphire substrates by metal-organic chemical vapour deposition. Metal－semiconductor－metal photoconductive detectors were fabricated using this material. The photocurrent properties of the detectors were measured and analysed. The spectrum response shows a high sensitivity in the wavelength region from 330 to 360nm, with a peak at 358nm and a sharp cutoff near 360nm. The maximum responsivities at 358nm were 700A/W (2V) and 7000A/W (30V). The relationship between responsivity and bias indicates that the responsivity increases linearly with bias until 30V. The influence of the spacing between two electrodes on the detector responsivity was also studied.     

在MOCVD系统中用预淀积In纳米点低温下合成生长InN

利用低压金属有机化学气相淀积(LP-MOCVD)系统,在(0001)蓝宝石衬底上采用预淀积In纳米点技术低温合成制备了立方相的InN薄膜.首先以TMIn作源在蓝宝石衬底表面预淀积了一层金属In纳米点,然后在一定条件下合成生长InN薄膜.X射线衍射谱(XRD)和X射线光电子发射谱(XPS)显示适当的预淀积In不仅能够促进InN的生长,同时还能够抑制金属In在InN薄膜中的聚集.原子力显微镜(AFM)观察表明,金属In纳米点不仅增强了成核密度,而且促进了InN岛的兼并.自由能计算表明预淀积的In优先和NH3分解得到的NH与N基反应生成InN.我们认为这种优先生成的InN为接下来InN的生长提供了成核位,从而促进了InN的生长.     

A rational quantum state sharing protocol with semi-off-line dealer

A rational quantum state sharing protocol with the semi-off-line dealer is proposed. Firstly, the dealer Alice shares an arbitrary two-particle entangled state with the players by Einstein-Podolsky-Rosen (EPR) pairs and Greenberger-Horne-Zeilinger (GHZ) states. The EPR pairs are prepared by Charlie instead of the dealer, reducing the workload of the dealer. Secondly, all players have the same probability of reconstructing the quantum state, guaranteeing the fairness of the protocol. In addition, the dealer is semi-off-line, which considerably reduces the information exchanging between the dealer and the players. Finally, our protocol achieves security, fairness, correctness, and strict Nash equilibrium.     

Groups-dependent phosphines as the organic redox for point defects elimination in hybrid perovskite solar cells

Lead(Pb)⁰ and iodine(I)⁰ point defects generated during perovskite solar cell(PSC)fabrication and photoconversion form deep band energy levels as the carriers’recombination centers.These defects not only deteriorate device efficiency,but also facilitate chemical degradation with ion migration,resulting in restricted device lifetime.Herein,we present a novel type of phosphines as the point defects stabilizer for hybrid perovskite solar cells with enhanced performances.Three phosphines with varied side groups of tributyl,trioctyl and triphenyl are exampled as the dopants in perovskite films.The group dependent redox properties were observed in the perovskite film,dependent on their molecular weights and steric hinderances of phosphines.The partially oxidized tributyl phosphine(TBUP)with additional tributyl phosphine oxides(TBPO)is efficient in reduction of lead(Pb)⁰ and iodine(I)⁰ concentrations during the device fabrication and operation.The device with TBUP-TBPO pair showed enhanced power conversion efficiency(PCE)to 20.48% and maintain 91.7% of their initial PCEs after 500 h at 65℃ thermal annealing.Thus,this work presents an efficient route of utilize the phosphine species to reduce point defects in the perovskite film,which promoting further development of novel phosphorous additives with defects stabilization,interface passivation and encapsulation for low-cost solution processed PSCs.     

Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate

GaN-based micro light emitting diodes(micro-LEDs) on silicon(Si)substrates with 40μm in diameter are developed utilizing standard photolithography and inductively coupled plasma etching techniques.From currentvoltage curves,the relatively low turn-on voltage of 2.8 V and low reverse leakage current in the order of 10~(-8) A/cm~2 indicate good electrical characteristics.As the injection current increases,the electroluminescence emission wavelength hardly shifts at around 433 nm, and the relative external quantum efficiency slightly decays,because the impact of quantum-confined Stark effect is not serious in violet-blue micro-LEDs.Since GaN-LEDs are cost effective on large-area Si and suitable for substrate transfer or vertical device structures,the fabricated micro-LEDs on Si should have promising applications in the fields of high-resolution display and optical communication.