白光荧光粉Ca9.95-xNa0.75K0.25(PO4)7:Eu2+0.05,Mn2x+的制备及其发光特性

高温固相法合成了Ca9.95-xNa0.75 K0.25 (PO4)7∶Eu0.052+,Mn2+x(x=0,0.1,0.2,0.3,0.4,0.5,0.6和0.7)荧光粉,研究了其相组成和荧光发射性能.结果表明,由于样品中存在着晶体结构相似的双相,使得Eu2+的5d-4f跃迁辐射出峰值分别位于491和540 nm宽谱...     

基于车载被动差分光学吸收光谱技术的甲醛排放通量遥测研究

甲醛(HCHO)是大气中含量最为丰富的羰基化合物,广泛参与大气中的光化学反应,是一种重要的大气反应活性的指示剂以及城市大气气溶胶的前体物,在大气化学中扮演着重要的角色.本文初步探索了利用车载被动差分光学吸收光谱技术(differential optical absorption spectroscopy,DOAS)遥测...     

北京边界层大气中HONO和NO2垂直廓线的测量与分析

基于扫描长程差分吸收光谱(DOAS)系统于2007年8月27日～9月4日期间对北京市郊区进行了大气污染物HONO和NO2等垂直廓线的连续监测,详细探讨了HONO,NO2和HONO/NO2比值的垂直分布特征,重点研究了HONO的形成途径.结果显示HONO和NO2浓度随着高度的增加而降低,而HONO浓度梯度下降的更加剧烈;...     

基于扫描DOAS系统对北京城市大气中甲醛的梯度测量与分析

利用扫描长程DOAS(差分吸收光谱技术)系统结合气象高塔于2009年7月28日至8月13日开展了测量大气污染物廓线的外场,实验,对北京市大气中的SO2,NO2,O3,HCHO,HONO五种痕量气体进行实时监测,获得了 HCHO等污染物的浓度时间序列及垂直梯度时间序列.通过分析HCHO气体的垂直分布频率特征,并结合其他气...     

液相色谱-质谱用于卵巢肿瘤中磷脂轮廓的分析

卵巢肿瘤日益影响女性的健康和生活质量,其中的卵巢癌是女性三大恶性肿瘤之一,死亡率高居三者之首。因此卵巢肿瘤尤其卵巢癌是目前的一个研究热点。本研究利用液相色谱-质谱(LC-MS)联用技术对卵巢肿瘤进行磷脂轮廓分析,研究良性卵巢肿瘤(B)和卵巢癌(M)的患者血清中磷脂代谢的差异情况。首先用LC-MS采集血清中磷脂的指纹图谱,通过峰识别、峰匹配等得到峰表,然后利用正交校正的偏最小二乘法(OSC-PLS)进行多种分型,根据模型的变量重要因子(VIP)、VIP值的置信区间、S图和显著性差异检验结果等筛选有差异的磷脂。结果显示: M组和B组与正常对照(N)组比较都存在明显的磷脂代谢差异,发生改变的磷脂主要为缩醛磷脂酰乙醇胺、磷脂酰胆碱、缩醛磷脂酰胆碱、鞘磷脂和溶血磷脂酰胆碱。     

Relative and absolute configuration of vatiparol (1 mg): a novel anti-inflammatory polyphenol

Bioactive natural products offer multiple opportunities for the discovery of novel chemical entities with potential pharmaceutical, nutraceutical and agrochemical applications. Many new organic compounds with novel scaffolds are isolated in small quantities and established methods often fail to determine the structure and bioactivity of such novel natural products. To meet this challenge, we present here a new methodology combining RDC (residual dipolar coupling)-based NMR spectroscopy in microtubes, with a motif-inspired biological assessment strategy. Using only one milligram (ca. 1.5 μmol) of sample, the new protocol established the bioactivity as well as the relative and absolute configuration of vatiparol obtained from Vatica parvifolia. Vatiparol is unique in its unprecedented carbon skeleton and selective inhibitory effect on the expression of monocyte chemo-attractant protein-1 (MCP-1, also known as CCL2). The plausible biosynthetic pathway of vatiparol is briefly discussed. The approach introduced here promises to be widely applicable to the determination of the structure and bioactivity of structurally unknown organic samples available in very limited amounts.     

Synthesis and infrared and fluorescence spectra of new europium and terbium polynuclear complexes with an amide-based 1,10-phenanthroline derivative

An amide-based 1,10-phenanthroline (phen) derivative and its complexes with europium(III) and terbium(III) ions were synthesized. The complexes were characterized by elemental analysis, infrared spectra and conductivity. The europium and terbium ions were coordinated by O atoms of C=O, Ar-O-C and N atoms of phen. The fluorescence properties of the complexes in THF, dioxane, MeCN and DMF were investigated. Under the excitation of UV light, these complexes exhibited characteristic fluorescence of europium and terbium ions. The solvent factors influencing the fluorescent intensity were discussed.     

The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays

The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes （LEDs） have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi- quantum well （MQW） LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence （PL） spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows： 1） the improvement in crystal quality, namely the reduction in V-defects; 2） the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3） the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.     

GaN hexagonal pyramids formed by a photo-assisted chemical etching method

A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a con-venient photo-assisted chemical （PAC） etching method. The solution concentration has an evident influence on the surface morphology of GaN and the optimal solution concentrations for GaN hexagonal pyramids have been identified. GaN with hexagonal pyramids have higher crystal quality and tensile strain relaxation compared with as-grown GaN. A detailed anal- ysis about evolution of the size, density and optical property of GaN hexagonal pyramids is described as a function of light intensity. The intensity of photoluminescence spectra of GaN etched with hexagonal pyramids significantly increases compared to that of as-grown GaN due to multiple scattering events, high quality GaN with pyramids and the Bragg effect.     

Breakdown characteristics of AIGaN/GaN Schottky barrier diodes fabricated on a silicon substrate

In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes （SBDs） fabricated on the silicon substrate are investigated. The breakdown voltage （BV） of the SBDs first increases as a function of the anodeto-cathode distance and then tends to saturate at larger inter-electrode spacing. The saturation behavior of the BV is likely caused by the vertical breakdown through the intrinsic GaN buffer layer on silicon, which is supported by the post-breakdown primary leakage path analysis with the emission microscopy. Surface passivation and field plate termination are found effective to suppress the leakage current and enhance the BV of the SBDs. A high BV of 601 V is obtained with a low on-resistance of 3.15 mΩ·cm^2.