Peak effect in the critical current of type II superconductors with strong magnetic vortex pinning

We perform 2D Langevin simulations studying the peak effect (PE) of the critical current taking into account the temperature dependence of the competing forces. We observe and report that the PE results from the competition of vortex-vortex interactions and vortex-pin interactions which have different temperature dependencies. The simulations reveal that the PE can take place only for certain pinning strengths, densities of pinning centers, and driving forces, which is in good agreement with experiments. No apparent vortex order-disorder transition is observed across the PE regime. In addition, the PE is a dynamical phenomenon, and thermal fluctuations can speed up the process for the formation of the PE.     

Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

One-dimensional wurtzite InN nanowires and zincblende InN nanorods are prepared by chemical vapour deposition （CVD） method on natural cleavage plane （110） of GaAs. The growth direction of InN nanowires is [100], with wurtzite structure. The stable crystal structure of InN is wurtzite （w-InN）, zincblende structure （z-InN） is only reported for 2D InN crystals before. However, in this work, the zincblende InN nanorods [011] are synthesized and characterized. The SEM and TEM images show that every nanorod shapes a conical tip, which can be explained by the anisotropy of growth process and the theory of Ehrlich Schwoebel barrier.     

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on γ-LiAlO_2

We report the structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs grown by MOCVD on a 7-LiAlO2 （100） substrate. The TMGa, TMIn and NH3 are used as sources of Ga, In and N, respectively. The structural and surface properties of the epilayers are characterized by x-ray diffraction, polarized Raman scattering and atomic force microscopy （AFM）. The films have a very smooth surface with rms roughness as low as 2nm for an area of 10×10μm^2 by AFM scan area. The XRD spectra show that the materials grown on 7-LiAl02 （100） have （1 - 100） m-plane orientation. The EL spectra of the m-plane InGaN/GaN multiple quantum wells LEDs are shown. This demonstrates that our nonpolar LED structure grown on the 7-LiAlO2 substrate is indeed free of internal electric field. The current voltage characteristics of these LEDs show the rectifying behaviour with a turn on voltage of 1-3 V.     

电容-电压法研究AlxGa1-xN/GaN异质结压电极化效应

制备了基于调制掺杂Al0.22Ga0.78N/GaN异质结的Pt/Al0.22Ga0.78N/GaN肖特基二极管.由于Al0.22Ga0.78N势垒层中的极化场不同,不同Al0.22Ga0.78N势垒层厚度的二极管的电容-电压特性显著不同.根据对样品电容-电压特性的数值模拟,在Al0.22Ga0.78N势垒层厚度为30nm和45nm的样品中,异质界面的极化电荷面密度为6.78×1012cm-2.在Al0.22Ga0.78N势垒层厚度为75nm的样品中,极化电荷面密度降为1.30×1012cm-2.这种极化电荷面密度的降低是由于GaN上Al0.22Ga0.78N势垒层由于厚度增加而产生应变的部分弛豫.本工作也提供了一种定量表征AlxGa1-xN/GaN异质结中极化电荷面密度的方法.     

地基多轴DOAS仪器的NO2斜柱浓度对比研究

介绍了两台地基多轴DOAS仪器测量的NO2斜柱浓度的对比研究。利用日本海洋研究开发机构的一套多轴DOAS设备在2009年11月—12月31日期间16d的观测数据,与安光所自主研发的一套多轴DOAS设备测量的NO2差分斜柱浓度进行了对比。通过对比发现,采用自动调整积分时间的方法,与固定积分时间的设置相比仪器具有更高的信噪比;两套仪器的反演结果在小角度下具有比较好的一致性,相关系数高达0.995,但随着角度的增大相关性逐渐变差。在9点至16点时段内相对偏差较小,其中20°方向的结果最为接近,最小偏差仅有12%,但在9点前和16点后二者偏差增大。日方仪器在可见波段的反演结果明显好于紫外波段,反演中的剩余噪声减小了60%以上,同时在可见波段的差分斜柱浓度的计算结果与我们的多轴DOAS在紫外波段的计算结果在全天都具有非常好的一致性。     

AlGaN/GaN量子阱中子带的Rashba自旋劈裂和子带间自旋轨道耦合作用研究

首先把本征值方程投影到导带的子空间中, 进而得到AlGaN/GaN量子阱中第一、二子带的Rashba自旋劈裂系数(α ₁, α ₂)和子带间自旋-轨道耦合系数η₁₂. 然后自恰求解薛定谔方程和泊松方程计算了不同栅压的量子阱中的α ₁, α ₂和η₁₂, 并分别讨论了量子阱阱层、左右异质结界面和垒层对它们的贡献. 结果表明可以通过栅压来调节自旋-轨道耦合系数, 子带间自旋轨道耦合系数η₁₂比Rashba自旋劈裂系数α ₁, α ₂小, 但基本在同一数量级.     

MOCVD生长InxGa1-Xn薄膜的表征

本文利用MOCVD方法在(0001)取向的蓝宝石衬底上实现了不同生工艺条件下的InxGa-xN薄膜的制备,并通过XRD、SEM、AFM等测量分析方法系统研究了生长工艺参数对InxGa1-xN薄膜的组分和性质的影响.InxGa1-xN薄膜的制备包括蓝宝石衬底表面上GaN缓冲层的生长以及缓冲层上InxGa1-xN薄膜的沉积两个过程.通过对所制备InxGa1-xN薄膜的XRD、SEM、AFM分析发现,调节生长温度和TMGa的流量可以有效控制InxGa1-xN薄膜中In的组分,并且随着生长温度的升高,InxGa1-xN薄膜的表面缺陷减少.     

ZnO/ZnMgO异质结场效应管的制备与性能研究

利用等离子体增强化学气相沉积(PECVD)技术,在ZnO/ZnMgO异质结构上制备SiO₂作为栅绝缘层,采用光刻与腐蚀工艺制备ZnO/ZnMgO异质结场效应管。电学性能测试及计算结果表明器件栅压调控作用明显。发现栅端漏电流对器件性能造成一定影响。在低温条件下,栅绝缘层产生钝化,从而能够改善器件的性能。     

Macroporous magnetic poly(GMA-EGDMA-DVB) microspheres supported palladium complex as an efficient catalyst for Heck reaction

<正>Macroporous magnetic poly(GMA-EGDMA-DVB) microspheres synthesized by suspension polymerization were used as supports for palladium catalyst.The results showed the novel magnetic catalyst can promote Heck reaction of aryl halides with acrylic acid efficiently without an inert atmosphere.In addition,the novel catalyst can be conveniently recovered by applying an external magnet and reused at least five times without significant loss of its activity.     

A study of dilational rheological properties of polymers at interfaces

Viscoelastic properties of two polymers, partially hydrolyzed polyacrylamide and partially hydrolyzed modified polyacrylamide, widely used in chemical flooding in the petroleum industry, were investigated at three interfaces, water-air, water-dodecane, and water-crude oil, by means of a dilational method provided by I.T. Concept, France, at 85 degrees C. Polymer solutions were prepared in brine with 10,000 mg/l sodium chloride and 2000 mg/l calcium chloride. It has been shown that the viscoelastic modulus increases with the increment of polymer concentration in the range of 0-1500 mg/l at the water-air interface. Each polymer shows different viscoelatic behavior at different interfaces. Generally speaking, values of the viscoelastic modulus (E), the real part (E'), and the imaginary part (E") at the crude oil-water interface for each polymer are lower than at the air-water or water-dodecane interface. The two polymers display different interfacial properties at the same interface. Polymer No. 2 gives more viscous interfaces than polymer No. 1. All the information obtained from this paper will be helpful in understanding the interfacial rheology of ultra-high-molecular-weight polymer solutions.