分光光度法测定微量甲醛用甲醛标准溶液保存稳定性探讨

甲醛是一种危害人们身体健康的化学物质.生活中甲醛污染无处不在,室内装饰的各种人造板材、贴墙布、贴墙纸、化纤地毯、泡沫塑料、油漆和涂料等均含有甲醛,并会逐渐向周围环境释放;使用了树脂整理剂或涂层的织物面料、服装也含有甲醛成分,直接接触人体损害人们的健康.     

Jamming of packings of frictionless particles with and without shear

By minimizing the enthalpy of packings of frictionless particles, we obtain jammed solids at desired pressures and hence investigate the jamming transition with and without shear. Typical scaling relations of the jamming transition are recovered in both cases. In contrast to systems without shear, shear-driven jamming transition occurs at a higher packing fraction and the jammed solids are more rigid with an anisotropic force network. Furthermore, by introducing the macrofriction coefficient, we propose an explanation of the packing fraction gap between sheared and non-sheared systems at fixed pressure.     

高重复频率激光脉冲作用下KTP晶体中的灰迹

采用波长为1 064 nm/532 nm、脉宽6 ns(FWHM)的高重复频率调Q激光,研究了磷酸氧钛钾(KTP)晶体中灰迹的产生机理,以及色心密度对灰迹的影响。晶体透过率表征了色心密度,根据透过率与色心密度的关系以及色心密度对灰迹产生的决定作用,定义临界灰迹密度,当晶体透过率高于此值时可安全运行,而低于此值时,为避免晶体发生灾难性损伤应立即停止运行。实验结果表明:灰迹不仅大量吸收紫外及可见光能量,而且大量吸收近红外波段能量,这为灰迹的在线监测提供了一种监测方法。     

噁唑硼烷催化前手性酮肟醚不对称还原反应的密度泛函研究

对噁唑硼烷催化前手性酮肟醚不对称还原反应进行了密度泛函理论(DFT)研究. 在B3LYP/6-31G(d)水平下对反应主要中间体和过渡态结构进行了完全优化, 并通过振动分析确认了过渡态. 结果表明, 该不对称还原反应的手性控制步骤是氢从BH3向酮肟醚羰基碳和肟基碳的转移, 还原产物的手性由这两步反应所决定. 在所有的反应途径中, 第一个氢的转移都是通过一个六元环的过渡态完成, 而第二个氢的转移则是通过一个五元环或四元环的过渡态完成.     

新型尾式组氨酸卟啉的合成及性质

设计并合成了新型尾式氨基酸卟啉5-(Trt-组氨酸酰胺基苯基)-10,15,20-三苯基卟啉(Trt-His-NH2-TPP,1)及其金属卟啉配合物(Zn,Co,Fe,Mn,分别标记为2～5).通过元素分析、核磁共振氨谱、质谱、紫外-可见光谱和红外光谱等对化合物进行了表征,研究了它们的荧光性质,并通过理论模拟研究了其最...     

电信技术选择管制的突变模型

"追捧效应"、"市场锁定"一直是电信产业技术选择的奇特现象,突发性的变化后是持续性的稳定,电信技术市场突发性的变革令传统经济分析难以找到解释的途径.系统理论的最新研究成果同时表明,以均衡分析研究经济是不足以反映客观现实的.电信技术的迅猛发展,动态化特征加剧,更使均衡分析没有用武之地.以系统论的观点分析电信产业技术的市场化突变是本文的主要内容.通过建构电信技术选择管制的突变模型,得出电信技术选择突变产生的系统条件.     

The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells

This paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with H$_{2}$ prior to plasma ignition, and selecting proper discharging time after silane flow injection. Material prepared under these conditions at a deposition rate of 0.78\,nm/s maintains higher crystallinity and fine electronic properties. By H-plasma treatment before i-layer deposition, single junction $\mu $c-Si:H solar cells with 5.5{\%} efficiency are fabricated.     

BaFe12O19/Ni0.6Zn0.4Fe2O4复合材料的磁性能研究

采用两步溶胶-凝胶法,分别在850℃,950℃和1050℃下成功制备了BaFe12O19/Ni0.Zn0.4Fe2O4复合材料,利用X射线衍射(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、振动样品磁强计(VSM)对样品的化学成分、结构、形貌、磁性能进行了表征.结果表明,钡铁氧体大部分呈片状,Ni0.6Zn0.4Fe2O4呈颗粒状分散在钡铁氧体周围.与850℃制备的钡铁氧体和镍锌铁氧体纯相纳米粉体相比,850 ℃制备的BaFe12O19/Ni06Zn04Fe2O4复合粉体的矫顽力和剩余磁化强度介于BaFe12O19和Ni0.6Zn0.4Fe2O4之间;饱和磁化强度(Ms=55.61 emu/g)比钡铁氧体(Ms=53.33emu/g)和镍锌铁氧体(Ms=54.13 emu/g)的都有提高.不同煅烧温度制备的BaFe12O19/ Ni0.6Zn0.4Fe2O4复合粉体,当烧结温度为950℃时饱和磁化强度最大(M =64.84 emu/g);是一种性能优良的磁性材料.     

高重复频率激光脉冲作用下KTP晶体中的灰迹

采用波长为1 064 nm/532 nm、脉宽6 ns(FWHM)的高重复频率调Q激光,研究了磷酸氧钛钾(KTP)晶体中灰迹的产生机理,以及色心密度对灰迹的影响。晶体透过率表征了色心密度,根据透过率与色心密度的关系以及色心密度对灰迹产生的决定作用,定义临界灰迹密度,当晶体透过率高于此值时可安全运行,而低于此值时,为避免晶体发生灾难性损伤应立即停止运行。实验结果表明：灰迹不仅大量吸收紫外及可见光能量,而且大量吸收近红外波段能量,这为灰迹的在线监测提供了一种监测方法。     

HIAF-BRing的双向涂抹注入模拟

BRing是HIAF工程的主加速器,其设计流强为每个脉冲内的粒子数1×1011个（238U34+）,为了达到此设计流强,注入增益应达到88倍以上。BRing采用了双向涂抹注入方案,其满足BRing的注入增益要求,同时具有注入时间短和累计束分布较均匀而减小了空间电荷效应的特点。双向涂抹注入方案利用水平和垂直两组凸轨磁铁以及倾斜的静电偏转板,在水平相空间和垂直相空间内同时进行涂抹。为了检验双向涂抹注入方案能否达到BRing的设计要求,利用ORBIT程序对双向涂抹注入过程进行了模拟,模拟结果显示,在单次双向涂抹注入113圈的情况下,注入效率为97.7%,注入增益达到110.3倍,满足了BRing流强要求。累积束的分布相对均匀,空间电荷效应引起的工作点漂移约为-0.02,粒子因共振损失风险很小。针对注入束流偏角、切割板角度、工作点偏差和Bump延时等不同注入参数进行了误差分析,结果显示BRing的双向涂抹注入效率对注入参数偏差的容忍度较高。BRing is the main accelerator of High Intensity heavy Ion Accelerator Facility(HIAF) and its design current is 1×1011 particles per pulse (238U34+). To accumulate beams up to the design current, the injection gain has to reach 88. Two planes painting injection scheme is proposed for BRing. This scheme uses a tilted electrostatic septum and 8 bump magnets to paint beams into horizontal and vertical phase space simultaneously. It can inject enough beams into the ring in a short time and paint beams uniformly. The injection process is simulated using ORBIT code and 113 turns is injected into BRing with an injection efficiency of 97.7% which meets the requirement for beam current of BRing. The accumulated beams are distributed uniformly in transverse and hence have a little tune shift of -0.02 which reduces the risk of beam loss due to the resonance. Errors of injection parameters are analysed and the result shows two planes painting injection scheme has a high tolerance for errors of injection parameters.