快速制备金属基固相微萃取金涂层用于环境水样中痕量苯并[a]芘的测定

本文以刻蚀不锈钢丝作为固相微萃取(SPME)纤维基体,用化学沉积技术快速制备了亚微米金颗粒涂层,与高效液相色谱(HPLC)联用,用苯并[a]芘(B[a]p)评价了SPME金涂层的萃取分离性能,优化了实验条件。实验结果表明,该金涂层与基体结合牢固、稳定性好、寿命长、制备简单。所建立的金涂层SPME-HPLC法测定B[a]p线性范围为25~5 000ng/L,检出限(S/N=3)为12.50ng/L;对于4μg/L的B[a]p溶液,制备的单一金涂层SPME-HPLC分析结果的相对标准偏差(RSD)为4.86%(n=6),重复制备的金涂层SPME-HPLC分析结果的RSD为7.81%(n=6)。实际水样中B[a]p的加标回收率在94.25%~110.9%之间,RSD为2.67%~10.24%。     

Graph dynamical networks for forecasting collective behavior of active matter

After decades of theoretical studies, the rich phase states of active matter and cluster kinetic processes are still of research interest. How to efficiently calculate the dynamical processes under their complex conditions becomes an open problem. Recently, machine learning methods have been proposed to predict the degree of coherence of active matter systems. In this way, the phase transition process of the system is quantified and studied. In this paper, we use graph network as a powerful model to determine the evolution of active matter with variable individual velocities solely based on the initial position and state of the particles. The graph network accurately predicts the order parameters of the system in different scale models with different individual velocities, noise and density to effectively evaluate the effect of diverse condition. Compared with the classical physical deduction method, we demonstrate that graph network prediction is excellent, which could save significantly computing resources and time. In addition to active matter, our method can be applied widely to other large-scale physical systems.     

BaFe12O19/Ni0.6Zn0.4Fe2O4复合材料的磁性能研究

采用两步溶胶-凝胶法,分别在850℃,950℃和1050℃下成功制备了BaFe12O19/Ni0.Zn0.4Fe2O4复合材料,利用X射线衍射(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、振动样品磁强计(VSM)对样品的化学成分、结构、形貌、磁性能进行了表征.结果表明,钡铁氧体大部分呈片状,Ni0.6Zn0.4Fe2O4呈颗粒状分散在钡铁氧体周围.与850℃制备的钡铁氧体和镍锌铁氧体纯相纳米粉体相比,850 ℃制备的BaFe12O19/Ni06Zn04Fe2O4复合粉体的矫顽力和剩余磁化强度介于BaFe12O19和Ni0.6Zn0.4Fe2O4之间;饱和磁化强度(Ms=55.61 emu/g)比钡铁氧体(Ms=53.33emu/g)和镍锌铁氧体(Ms=54.13 emu/g)的都有提高.不同煅烧温度制备的BaFe12O19/ Ni0.6Zn0.4Fe2O4复合粉体,当烧结温度为950℃时饱和磁化强度最大(M =64.84 emu/g);是一种性能优良的磁性材料.     

电信技术选择管制的突变模型

"追捧效应"、"市场锁定"一直是电信产业技术选择的奇特现象,突发性的变化后是持续性的稳定,电信技术市场突发性的变革令传统经济分析难以找到解释的途径.系统理论的最新研究成果同时表明,以均衡分析研究经济是不足以反映客观现实的.电信技术的迅猛发展,动态化特征加剧,更使均衡分析没有用武之地.以系统论的观点分析电信产业技术的市场化突变是本文的主要内容.通过建构电信技术选择管制的突变模型,得出电信技术选择突变产生的系统条件.     

HIAF-BRing的双向涂抹注入模拟

BRing是HIAF工程的主加速器,其设计流强为每个脉冲内的粒子数1×1011个（238U34+）,为了达到此设计流强,注入增益应达到88倍以上。BRing采用了双向涂抹注入方案,其满足BRing的注入增益要求,同时具有注入时间短和累计束分布较均匀而减小了空间电荷效应的特点。双向涂抹注入方案利用水平和垂直两组凸轨磁铁以及倾斜的静电偏转板,在水平相空间和垂直相空间内同时进行涂抹。为了检验双向涂抹注入方案能否达到BRing的设计要求,利用ORBIT程序对双向涂抹注入过程进行了模拟,模拟结果显示,在单次双向涂抹注入113圈的情况下,注入效率为97.7%,注入增益达到110.3倍,满足了BRing流强要求。累积束的分布相对均匀,空间电荷效应引起的工作点漂移约为-0.02,粒子因共振损失风险很小。针对注入束流偏角、切割板角度、工作点偏差和Bump延时等不同注入参数进行了误差分析,结果显示BRing的双向涂抹注入效率对注入参数偏差的容忍度较高。BRing is the main accelerator of High Intensity heavy Ion Accelerator Facility(HIAF) and its design current is 1×1011 particles per pulse (238U34+). To accumulate beams up to the design current, the injection gain has to reach 88. Two planes painting injection scheme is proposed for BRing. This scheme uses a tilted electrostatic septum and 8 bump magnets to paint beams into horizontal and vertical phase space simultaneously. It can inject enough beams into the ring in a short time and paint beams uniformly. The injection process is simulated using ORBIT code and 113 turns is injected into BRing with an injection efficiency of 97.7% which meets the requirement for beam current of BRing. The accumulated beams are distributed uniformly in transverse and hence have a little tune shift of -0.02 which reduces the risk of beam loss due to the resonance. Errors of injection parameters are analysed and the result shows two planes painting injection scheme has a high tolerance for errors of injection parameters.     

CSR-LINAC IH-RFQ的高频电磁设计

中国科学院近代物理研究所在CSR-LINAC项目中设计了一台108.48 MHz的IH型RFQ直线加速器。该RFQ可以将质荷比为3~7的离子从4 keV/u加速到300 keV/u。在完成束流动力学设计的基础上,主要针对RFQ腔体的高频电磁设计展开了研究,同时利用了电磁场仿真和束流动力学模拟来研究腔体的四极场不平整度和二极场及其动力学影响。未经调谐的情况下,腔体的谐振频率为108.15 MHz,腔体空载品质因子Q₀为5 910,腔体功耗为123 kW。通过在支撑板两端增加底切的设计,将腔体的四极场不平整度由-21%~ 12%优化至±2.5%,满足了束流动力学要求。腔体的二极场为-3%~ -2.2%,使得束流在垂直方向小幅振荡,RFQ的垂直方向接受度减小5%。为了保证功率馈入时反射较小,将耦合器设置在临界耦合状态,耦合面积为940 mm2。为了补偿腔体的频率偏差和漂移,设计了调谐量分别为707和132 kHz的固定调谐器和可动调谐器。The 108.48 MHz IH type RFQ for CSR-LINAC project is under design at Institute of Modern Physics, Chinese Academy of Sciences. This RFQ can accelerate heavy ions with mass to charge ratio of 3~7 from 4 keV/u to 300 keV/u. According to the beam dynamics requirement, the RF structure design has been finished. The quadrupole field unflatness and dipole field of the cavity were studied by electromagnetic simulation and beam dynamics simulation. The frequency of the cavity without tuning is 108.15 MHz, the Q₀ of the cavity is 5910, and the RF power loss is 123 kW. The quadrupole field unflatness of ±2.5%,which was -21%~12% before optimizing, is achieved to meet dynamics requirement through the undercuts in cavity supporters. The dipole field of -3%~ -2.2% causes the oscillation of the beam center and acceptance reduction of 5%. The power coupler must be in critical coupling state with the coupling area of 940 mm2 for minimum reflection coefficient. The tuners, consist of coarse and fine tuners with frequency shift of 707 and 132 kHz respectively, is used for tuning of frequency deviation of the cavity.     

Jamming of packings of frictionless particles with and without shear

By minimizing the enthalpy of packings of frictionless particles, we obtain jammed solids at desired pressures and hence investigate the jamming transition with and without shear. Typical scaling relations of the jamming transition are recovered in both cases. In contrast to systems without shear, shear-driven jamming transition occurs at a higher packing fraction and the jammed solids are more rigid with an anisotropic force network. Furthermore, by introducing the macrofriction coefficient, we propose an explanation of the packing fraction gap between sheared and non-sheared systems at fixed pressure.     

The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells

This paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with H$_{2}$ prior to plasma ignition, and selecting proper discharging time after silane flow injection. Material prepared under these conditions at a deposition rate of 0.78\,nm/s maintains higher crystallinity and fine electronic properties. By H-plasma treatment before i-layer deposition, single junction $\mu $c-Si:H solar cells with 5.5{\%} efficiency are fabricated.     

固载型季铵盐离子液体催化合成环状碳酸酯:烷基链长及羟基的影响

CO2是造成温室效应的主要原因,同时又是地球上储量最为丰富的可再生C1能源.因此,CO2资源化受到了广泛关注.CO2与环氧化物反应可合成环状碳酸酯,后者广泛用作极性溶剂、锂离子电池的电解液和聚碳酸酯中间体等.但是,由于CO2的化学惰性,其反应需要高活性的催化剂.近年来,碱性金属、金属配合物及离子液体等均相催化剂被用于催化CO2与环氧化物加成反应.其中,离子液体具有高热稳定性、低挥发性和结构可调性,得到了广泛研究.季铵盐、咪唑盐和季鏻盐等离子液体已经被证实具有较高的催化活性.然而,均相催化剂回收困难,而且产物需要进一步纯化.将离子液体固载化制备成非均相催化剂,可以实现简单的固/液分离.聚合物、SiO2、SBA-15、氧化石墨烯和羧甲基纤维素等固载化催化剂已经广泛用于CO2和环氧化物的环加成反应.虽然非均相催化剂显示了潜在的优势,但是催化活性较低的问题仍然亟待解决,尤其是在较温和的反应条件下.因此,通过催化剂分子结构设计以提高催化性能,成为目前的研究热点.本文提出在催化活性基团和载体之间引入长烷基链,增加催化活性位点与反应物的接触面积,同时引入助催化的羟基,通过长链与羟基的协同作用,提高非均相催化剂活性.本文合成了羟基功能化长柔性链季铵化聚苯乙烯微球非均相催化剂([AHTAPC-PS]X,X=Cl,Br,I),用于催化CO2与环氧化物的环加成反应,并与不含羟基的长烷基链季铵盐离子液体非均相催化剂([TAPB-PS]Br)及短烷基链季铵盐离子液体非均相催化剂([TMA-PS]X)的催化性能进行了对比.考察了固载后的离子液体烷基链长及侧链羟基对催化性能的影响,并通过实验和密度泛函理论计算研究了催化机理.红外光谱、扫描电镜和能量散射谱结果充分证明了季铵盐非均相催化剂的成功合成;热重测试表明,此类催化剂具有可以满足反应需求的热稳定性.密度泛函理论计算结果显示,与短烷基链非均相催化剂相比,长烷基链非均相催化剂的阴离子负电性更强,同时羟基与环氧化合物的氧原子之间存在强的氢键作用.羟基形成的氢键可以增加环氧化物的C–O键长,同时强负电的阴离子更加容易攻击β-碳原子,促进环氧化物开环.另外,长烷基链结构使得卤素阴离子具有与反应物更大的接触范围,因此提高了反应活性.当采用短烷基链季铵盐非均相催化剂时,环氧丙烷(PO)与CO2环加成反应生成碳酸丙烯酯(PC)的产率仅为70.9%,而采用长烷基链季铵盐非均相催化剂时产率可达91.4%(135°C,1.5MPa,3h),进一步加入助催化的羟基,则PC产率可提高到98.5%.此外,含羟基的长烷基季铵盐非均相催化剂在温和条件下也具有较高的催化活性(100°C,1.5 MPa,3 h,PC产率78.4%),该催化剂同时具有较高的循环稳定性(10次循环后,PC产率≥96%,选择性≥99%).综上所述,该催化剂具有优异的综合性能,展现了良好的工业应用前景.