Charge coupled devices （CCD） photometry and long-term optical variability of gamma-ray-loud BL Lacertae object Mkn 421

Evidence for the long-term optical curve variability and colour behaviour of the BL Lac object Mkn 421 is presented. Our results show that the amplitude of the optical variations of Mkn 421 is only about {\Delta} B=4.7 magnitude in the B-band for its photometric history from 1899 to 2002. The results of optical photometric monitoring of the Mkn 421 from April 2000 to Jan 2002 are provided. During our observation, Mkn 421 shows significant rapid variations and exhibits short time variability of 2.42 hours in the B band. A strong correlation between the B-V colour index and the magnitude in the B band is found. Our charge coupled device (CCD) photometry of Mkn 421 shows that the measured results are in good agreement with the predicted optical variability period of about 23 years.     

Enhanced thermoelectric properties of p-type polycrystalline SnSe by regulating the anisotropic crystal growth and Sn vacancy

Thermoelectric selenides have attracted more and more attentions recently.Herein,p-type Sn Se polycrystalline bulk materials with good thermoelectric properties are presented.By using the SnSe_2 nanostructures synthesized via a wetchemistry route as the precursor,polycrystalline Sn Se bulk materials were successfully obtained by a combined heattreating process under reducing atmosphere and following spark plasma sintering procedure.As a reference,the Sn Se nanostructures synthesized via a wet-chemistry route were also fabricated into polycrystalline bulk materials through the same process.The thermoelectric properties of the Sn Se polycrystalline transformed from SnSe_2 nanostructures indicate that the increasing of heattreating temperature could effectively decrease the electrical resistivity,whereas the decrease in Seebeck coefficient is nearly invisible.As a result,the maximum power factor is enhanced from 5.06×10~(-4)W/m·K~2to 8.08×10~(-4)W/m·K~2at 612~?C.On the other hand,the reference sample,which was obtained by using Sn Se nanostructures as the precursor,displays very poor power factor of only 1.30×10~(-4)W/m·K~2at 537~?C.The x-ray diffraction(XRD),scanning electron microscope(SEM),x-ray fluorescence(XRF),and Hall effect characterizations suggest that the anisotropic crystal growth and existing Sn vacancy might be responsible for the enhanced electrical transport in the polycrystalline Sn Se prepared by using SnSe_2 precursor.On the other hand,the impact of heat-treating temperature on thermal conductivity is not obvious.Owing to the boosting of power factor,a high z T value of 1.07 at 612~?C is achieved.This study provides a new method to synthesize polycrystalline Sn Se and pave a way to improve the thermoelectric properties of polycrystalline bulk materials with similar layered structure.     

一维微分方程的多项式特解方法（英文）

本文对一维常微分算子及发展微分算子提出一种基于解析多项式特解(MPPS)的求解方法,通过使用这些特解公式,将微分方程的解显式表达为多项式特解的线性组合来求解复杂的微分方程,如可以使用这些公式来求解右端具有不连续驱动项的微分系统.文中给出一系列数值例子,数值模拟结果精度很高,而且误差非常稳定.     

低于阈值激光功率密度下Mg原子的非序列双电离

基于经典系综模型,研究了Mg原子在低于重碰撞阈值激光功率密度下的非序列双电离(NSDI)。当少周期量级线性偏振激光的功率密度为3.0×10~(13) W·cm~(-2)时,末态关联电子动量分布中的电子对主要分布在第一、第二和第四象限,第一象限中的电子对呈现了明显的关联行为。分析了重碰撞和双电离之间的延迟时间,发现不同的延迟时间对应着不同的电离过程,延迟时间对电子出射过程具有显著影响;延迟时间小于半个周期的NSDI事件,双电子倾向于反方向出射,而延迟时间大于半个周期的,存在双电子同方向出射的可能。     

大液体量空分流程分析

针对有大液体量要求的冶金型空分装置,介绍了四种流程组织形式。通过模拟计算和分析比较,从设备投资、运行能耗、变负荷调节性、操作稳定性等方面,总结了不同流程型式的特点及适应性。针对不同的液体产品比例要求,推荐选择不同的流程形式,达到流程优化、节能降耗的目的。     

(p,2p)准弹性敲出反应的多重散射展开

为了能更精确地描述(p,2p)这一类准弹性敲出反应,本文发展了一种多重散射展开方法.基于时间无关的多重散射理论.T矩阵元被展开成多重散射级数的形式.T_fi=M(1)M+T(2)M+....已经证明,第一项T(1)M的作用几乎等于前三级Bron展开的总和,因而,只取多重散射级数的头一项,就有相当高的精确度,而T(1)M的计算比较简单.将现在这种方法应用于纯库仑力的情况(例如氢原子的(e,2e)以及⁶Li(p,2p)⁵He,得到相当令人满意的结果.     

线性时变微分代数系统的稳定性

讨论了线性时变微分代数系统的稳定性，直接由方程系数给出稳定性的判定条件.      

截面体与凸体的包含测度

本文建立了E^n中的凸体与其位似体的包含测度的相等关系，同时给出了凸体Minkowski和的包含测度的估计。最后证明了E^3中的关于原点对称的旋转椭球与其截面体相似的充要条件是K为以原点为心的球。     

Electronic structures and energy band properties of Be- and S-doped wurtzite ZnO

The energy band properties, density of states, and band alignment of the BexZn1-xO1-ySy alloy （Be- and S-doped wurtzite ZnO） are investigated by the first-principles method. BexZn1-xO1-ySy alloy is a direct band gap semiconductor, the valence band maximum （VBM） and the conduction band minimum （CBM） of BexZn1-xO1-ySy are dominated by S 3p and Zn 4s states, respectively. The band gap and lattice constant of BexZn1-xO1-ySy alloy can be modulated by changing the doped content values x and y. With the increase in Be content value x in the BexZnl-xOl-ySy alloy, the band gap increases and the lattice constant reduces, but the situation is just the opposite when increasing the S content value y in the BexZn1-xO1-ySy alloy. Because the lattice constant of Be0.375Zn0.625O0.75S0.25 alloy is well matched with that of ZnO and its energy gap is large compared with that of ZnO, so the Be0.375Zn0.625O0.75S0.25 alloy is suitable for serving as the blocking material for a high-quality ZnO-based device.     

聚芳香杂环甲烯的三阶非线性光学效应与时间分辨光克尔效应

合成了一系列聚芳香杂环甲烯,包括聚吡咯甲烯和聚噻吩甲烯.采用四波混频法研究材料的共振三阶非线性光学效应(λ＝532nm),其共振二阶超分子极化率γ三阶非线性光学系数分别达到10^-30esu和10^-8esu.选择具有良好溶解性、成膜性的聚吡咯对二甲氨基苯甲烯(PPDMAB),采用飞秒时间分辨光克尔效应方法研究材料的非共振三阶非线性光学效应(λ=790nm).实验表明,翠绿亚胺碱溶液的光克尔信号仅表现一超快响应的成分,归功于π电子云扭转产生的非共振激发.PPDMAB的非共振二阶超分子极化率γ三阶非线性光学系数分别达到γ=5.78×10^-32esu和χ⁽³⁾=1.26×10^-10esu.