易分散碳纳米管阵列可控制备及其衍生超级电容器性能

采用浮动催化剂化学气相沉积(FCCVD)的方法制备碳纳米管(CNT)阵列,通过优化温度、注射速率、生长基底等实验条件,得到高度达到3mm的超长CNTs阵列。选用间甲酚为分散剂,实现了CNT阵列的超大浓度分散,最大分散浓度可以达到120 mg/mL,良好的分散性可以使分散体形成紧密团聚的面团状。选用40 mg/mL的浓糊状分散体,用刮涂的方法得到了大面积的CNTs纸,测试了CNTs的电容性能,表现出稳定的电容器性能。     

Fluorinated <Emphasis Type="Italic">p</Emphasis>-<Emphasis Type="Italic">n</Emphasis> type copolyfluorene as polymer electret for stable nonvolatile organic transistor memory device

In this study, a kind of fluorinated copolyfluorene, named poly[(4-(octyloxy)-9,9-diphenylfluorene-2,7-diyl)-alt-(2,3,5,6-tetrafluoro-1,4-phenylene)] (PODPF-TFP), is synthesized by facile palladium-based direct aromatization. Compared to the non-fluorinated counterpart, poly[(4-(octyloxy)-9,9-diphenylfluorene-2,7-diyl)-alt-(p-phenylene)] (PODPF-P), deeper HOMO/LUMO energy level combined with steric hindrance effect endow PODPF-TFP with excellent spectra and morphology stability. Finally, organic field-effect transistor (OFET) memory devices are fabricated with PODPF-P/PODPFTFP as the dielectric layers, and they both exhibit flash type storage characteristic. Owing to the electronegativity of fluorine atom, the device based on PODPF-TFP exhibits larger memory window and more stable I _on/I _off ratio during a retention time of 10⁴ s as well as a better aging stability. The present study suggests that fluorinated p-n copolyfluorene electrets could enhance the capabilities of charge trapping and storage, which are promising for OFET memory devices.     

Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation

Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event upset (SEU) cross sections under tilted ion strikes are overestimated by 23.9% 84.6%, compared with under normally incident ion with the equivalent linear energy transfer (LET) value of ～ 41 MeV/(mg/cm 2 ), which can be partially explained by the fact that the MBU rate for tilted ions of 30 is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of ～ 9.5 MeV/(mg/cm 2 ), no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset (DBU) patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects (SEE) sensitivity, especially in MBU-sensitive devices.     

调焦方式对测绘相机主点位置的影响

考虑测绘相机调焦会影响相机的主点位置,从而改变相机的内方位元素,降低立体测绘精度,故本文分析了空间相机常用的3种调焦方式（镜组调焦、平面反射镜调焦、焦面调焦）对测绘相机主点位置的影响。简要介绍3种调焦方式的工作原理,研究了理想情况下3种调焦方式对主点位置的影响。在考虑系统装凋误差的情况下,建立了主点位置变化量与调焦量之间的数学模型,通过实例计算得出焦面调焦易满足测绘相机主点定位精度〈0．2pixel,是最适合的调焦方式。最后,以某一型号相机调焦机构为实验对象,对平面反射镜方式对主点的位置变化进行了实验量测,结果证明了提出的主点位置变化量理论计算公式的准确性和分析得到的不同调焦方式对主点位置影响的正确性,该公式可以用于指导测绘相机调焦方式的选择,以满足高精度测绘的需要。     

基于银纳米颗粒的PCF SERS传感器优化设计

为充分发挥表面增强拉曼散射(SERS)光子晶体光纤(PCF)传感器的应用价值,对实芯PCF的结构、银纳米颗粒结构参数对传感性能的影响进行研究与对比,据此设计出适用于PCFSERS传感的实芯PCF以及银纳米颗粒的形状、大小、间距等参数.经数值计算,入射波长为785 nm时,设计的实芯六孔PCF模场面积可达25.8 μm2,并能够实现单模传输.而半径为38 nm的银纳米球,间距为0.7nm时能够产生最大的SERS增强因子.研究证明,设计的实芯PCF在785 nm输入波长下能够提供理想的活性面积,银纳米颗粒的形状、尺寸、间距对SERS性能影响严重,而且与入射波长有很强的依赖关系.     

添加纳米Ti(C7N3)的ZrO2基纳米陶瓷模具材料

本文针对模具对陶瓷材料的要求,从提高陶瓷模具材料的综合力学性能出发,采用纳米复合方法制备出具有较高综合力学性能的纳米陶瓷模具材料.研究了纳米Ti(C7N3)和Y2O3的组分含量对纳米陶瓷模具材料微观结构和力学性能的影响,结果表明添加纳米Ti(C7N3)和Y2O3的氧化锆纳米陶瓷模具材料的力学性能优于纯氧化锆陶瓷材料,纳米颗粒的添加改善了材料的微观结构和力学性能.当纳米Ti(C7N3)和Y2O3的添加量分别为17.15vol;和5 mol;时,材料的综合性能最好,其抗弯强度为814MPa、断裂韧性6.35 MPa· m1/2、维氏硬度11.87 GPa.     

基于反射镜补偿的粗精组合稳定控制系统性能对比与分析

介绍用于光电稳定的粗精组合稳定系统的工作原理。根据快速反射镜的不同结构,对系统模型提出两种假设,在此基础上,对系统的频域特性、稳定性等进行分析,得出结论:组合稳定控制系统的性能主要取决于主、子系统的带宽比及组合控制器K的选择。