Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Silicon germanium(SiGe) heterojunction bipolar transistor(HBT) on thin silicon-on-insulator(SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology.The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion,which is different from that of a bulk counterpart.A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation.The Early voltage shows a kink with the increase of the reverse base-collector bias.Large differences are observed between SOI devices and their bulk counterparts.The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design,the simulation and the fabrication of high performance SOI SiGe devices and circuits.     

超声波轴向应力仪的研制

本文叙述了用超声方法测量材料轴向应力的计算公式,介绍了超声波轴向应力仪的工作原理,并利用该仪器对M36×260高强度螺栓进行了轴向应力的测量。实验结果表明:该仪器的声时测量精度为10~(-10s),轴向应力的测量精度优于0.4kgf/mm~2(约3.9N/mm~2)。     

Harmonic beam splitter design and fabrication

Two problems of half-wave hole and high ripples in the transmittance region for a harmonic beam splitter had been pointed out and analyzed. Based on the application of a half-wavelength control and a new admittance matching methods, a harmonic beam splitter was designed and fabricated. The former method eliminated the half-wave hole fundamentally, and the latter smoothed high ripples in the transmittance region effectively. The matching stack consisted of a symmetrically periodic structure and provided a complete matching at the desired wavelength, i.e., both conditions for the equivalent admittance and phase thickness were fulfilled. Furthermore, both the theoretical and the tested curves had been given, and a good agreement between them was obtained.     

MGTI型光交错复用器的色散特性分析

基于多光束干涉和Michelson干涉的共同作用原理,设计了畸变最小,高信道隔离度,宽且平坦通带,高一致性的MGTI型50 GHz光交错复用器.由于G-T腔对光波相位的非线性调制,使该器件具有固有的相对其它同类器件大的色散,在分析器件的色散特性的基础上,提出了该类器件的色散补偿方案,经补偿后的器件能够满足实际高速系统要求.     

半导体激光自混频干涉式传感器中的干涉与调制

应用F-P模型，阐述了半导体激光自混频干涉式传感器的干涉与调制过程，同时给出了相应的计算．     

An explanation for deviations from the quark number scaling of elliptic flows in low pT region

We carry out a systematic study of the different contributions to the deviations of the elliptic flows from the quark number scaling in high energy heavy ion collision in a quark combination model. The effects that we considered are: the resonance decay, the flavor dependence of the quark elliptic flow and the combination of quarks/antiquarks with slightly different transverse momenta. Our results show that the deviations observed in experiments can be well reproduced within the combination framework if all the three effects are considered. We make a detailed analysis of the different contributions using a Monte-Carlo program and suggest measuring the quark number scaling in intermediate p_T range more precisely.     

Centrality dependence of pT spectra for identified hadrons in Au+Au and Cu+Cu collisions at √sNN= 200GeV

The centrality dependence of transverse momentum spectra for identified hadrons at midrapidity in Au+Au collisions at √s_NN= 200GeV is systematically studied in a quark combination model. The p_T spectra of π^±, K^±, p(p) and Λ(Λ) in different centrality bins and the nuclear modification factors (R_CP) for these hadrons are calculated. The centrality dependence of the average collective transverse velocity 〈β(r)〉 for the hot and dense quark matter is obtained in Au+Au collisions, and it is applied to a relative smaller Cu+Cu collision system. The centrality dependence of p_T spectra and the R_CP for π⁰, K_s⁰ and Λ in Cu+Cu collisions at √s_NN= 200GeV are well described. The results show that 〈β(r)〉 is only a function of the number of participants N_part and it is independent of the collision system.     

L-Shell X-Ray Yields and Production Cross Sections of Zr and Mo Bombarded by Slow Highly Charged Ar16+ Ions

The L-shell x-ray yields of Zr and Mo bombarded by slow Ar16＋ ions are measured. The energy of the Ar^16＋ ions ranges from about 150 keV to 350 keV. The L-shell x-ray production cross sections of Zr and Mo are extracted from these yields data. The explanation of these experimental results is in the framework of the adiabatic direct- ionization and the binding energy modified BEA approximation. We consider, in the slow asymmetric collisions such as Ar and Mo/Zr, the transient united atoms （UA） are formed during the ion-surface interaction and the direct-ionization is the main mechanism for the inner-shell vacancy production. Generally, the theoretical results are in good agreement with the experimental data.     

全内反射式衍射光栅近场光学特性

 利用傅里叶模式理论分析了具有高衍射效率的全内反射式衍射光栅在TE 和TM偏振态下的近场光分布特点,讨论了光栅结构参数以及入射角度对光栅内电场增强的影响。结果表明：全内反射光栅内部电场分布对偏振态较敏感,光栅槽深和占宽比对电场增强影响较小,光栅内的峰值电场随光栅周期增大而增大,并且峰值电场随着入射角度的增大而减小。在应用于高功率激光时,降低光栅内部的电场增强可以有效降低损伤风险。