Newly designed multilayer thin film mirror for dispersion compensation in Ti:sapphire femtosecond lasers

There are two different effects to generate group delay dispersion by multilayer thin film mirrors: chirper effect and Gires-Tournois effect. Both effects are employed to introduce desired dispersion in the designed mirror. Thus the designed mirror provides large dispersion throughout broad waveband. Such mirror can be used for dispersion compensation in Ti:sapphire femtosecond lasers. Most group delay dispersion of a 5-mm Ti:sapphire crystal can be compensated perfectly with only four bounces of the designed mirror.     

Effects of oxygen partial pressure on optical absorption edge and UV emission energy of ZnO films

ZnO, with a band-gap of 3.37 eV and a large exciton binding energy (about 60 meV) at room temperature, is a promising material for optoelectronic devices, field- emission displays, and gas sensors. Recently, the interest in short wavelength display device is on the increase. In this regard, ZnO is a promising material[1-6]. High quality ZnO films have been prepared by many methods such as sputtering[7], reactive thermal and electron-beam evaporation[8], pulse laser deposition[9], chemical v…     

Antireflective characteristics of triangular shaped gratings

It is well known that conventional multi-layers are oftenused for antireflective coatings[1,2]. There are, however,only a handful of optical materials available, thus limit-ing the performance that could ideally be achieved. Onthe other hand, sub-wavelength structure surfaces, whichare surface-relief gratings with periods smaller than theincident wavelength, have been researched and foundto have antireflective properties[3,8]. Compared withstandard optical thin-film coating technologies, the h…     

Effect of Microstructure of TiO2 Thin Films on Optical Band Gap Energy

TiO2 coatings are prepared on fused silica with conventional electron beam evaporation deposition. After annealed at different temperatures for four hours, the spectra and XRD patterns of TiO2 thin film are obtained. XRD patterns reveal that only anatase phase can be observed in TiO2 coatings regardless of the different annealing temperatures, and with the increasing annealing temperature, the grain size gradually increases. The relationship between the energy gap and microstructure of anatase is determined and discussed. The quantum confinement effect is observed that with the increasing grain size of TiO2 thin film, the band gap energy shifts from 3.4 eV to3.21 eV. Moreover, other possible influence of the TiO2 thin-film microstructure, such as surface roughness and thin film absorption, on band gap energy is also expected.     

用e+e－→h′s反应中类双喷注事例研究部分子末态的色联接

借助JETSET事例产生器对e⁺e^－→h′s反应中的类双喷注事例进行研究.研究发现,在QCD微扰与非微扰的界面上,部分子系统的色中性流和色分离单态两种不同色联接方式导致了强子末态某些可观测量的显著差别.因此,它们可以用于判别部分子的色联接方式.     

二极管伏安特性曲线测试电路的改进

指出了文献中所给出的伏安法测二级管特性曲线电路存在的问题，并给出了改进电路。     

Transient optical properties in fused silica measured by time-resolved high-power laser photometer

A time-resolved high-power laser photometer, which measures the real-time variations of transmission, internal reflection, and scattering simultaneously with picosecond time resolution, was developed to investigate the material response sequence during high-power nanosecond laser irradiation in thick fused silica. It was found that the transient transmission decreased sharply, accompanied by an increase in internal reflection at the rising edge of the laser pulse. The transient transmission recovered, while laser damage did not occur, but it did not recover if the scattering increased, indicating the occurrence of laser damage. The reason for the sharp decrease of transmission and the relationship between the transmission drop and laser damage were discussed.     

基于干涉仪测量的变形镜面形展平标定研究

为了全面地了解变形镜的性能,以便自适应光学系统更好地工作,进行了基于干涉仪测量的变形镜面形展平标定研究.首先,给变形镜的压电陶瓷驱动器施加一半的控制电压;再用Zygo干涉仪测得变形镜的面形,计算对应各个驱动器位置的镜面高度,并算得各个位置镜面高度相对平均镜面高度的偏差;最后,控制驱动器运动使偏差量为零.测试及实验表明,受压电陶瓷迟滞的影响,上述过程需要迭代4到6次镜面面形才会收敛到希望的准确度;对镜面周边无驱动器约束的21单元变形镜,展平之后其80%口径的面形接近λ/20(λ=632.8 nm);对镜面周边有驱动器约束的137单元变形镜,展平后的面形优于λ/50.在望远镜不同的观测条件下,该技术可以快速地对变形镜进行展平标定,以适应不同的工作环境.     

AlN插入层对硅衬底GaN薄膜生长的影响

利用金属有机化合物气相外延沉积技术在2inch(5.08cm)Si(111)图形衬底上生长了GaN外延薄膜,在Al组分渐变AlGaN缓冲层与GaN成核层之间引入了AlN插入层,研究了AlN插入层对GaN薄膜生长的影响。结果表明,随着AlN插入层厚度的增加,GaN外延膜(002)面与(102)面X射线衍射摇摆曲线半峰全宽明显变小,晶体质量变好,同时外延膜在放置过程中所产生的裂纹密度逐渐减小直至不产生裂纹。原因在于AlN插入层的厚度对GaN成核层的生长模式有明显影响,较厚的AlN插入层使GaN成核层倾向于岛状生长,造成后续生长的nGaN外延膜具有更多的侧向外延成分,从而降低了GaN外延膜中的位错密度,减少了GaN外延膜中的残余张应力。同时还提出了一种利用荧光显微镜观察黄带发光形貌来表征GaN成核层形貌和生长模式的新方法。     

基于Cu/SiO_x/Al结构的阻变存储器多值特性及机理的研究

采用氧化硅材料构建了Cu/SiOx/Al的三明治结构阻变存储器件.用半导体参数分析仪对其阻变特性进行测量,结果表明其具有明显的阻变特性,并且通过调节限制电流,得到了四个稳定的阻态,各相邻阻态的电阻比大于10,并且具有良好的数据保持能力.在不同温度条件下对各个阻态进行电学测试及拟合,明确了不同阻态的电子传输机理不尽相同:阻态1和阻态2为欧姆传导机制,阻态3为P-F(Pool-Frenkel)发射机制,阻态4为肖特基发射机制.根据电子传输机制,建立了铜细丝导电模型并对Cu/SiOx/Al阻变存储器件各个阻态的电致阻变机制进行解释.