Growth of Semi-Insulating GaN by Using Two-Step AIN Buffer Layer

Semi-insulating GaN is grown by using a two-step A1N buffer layer by metalorganic chemical vapour deposition. The sheet resistance of as-grown semi-insulating GaN is dramatically increased to 10^13 Ω/sq by using two-step A1N buffer instead of the traditional low-temperature GaN buffer. The high sheet resistance of as-grown GaN over 10^13 Ω/sq is due to inserting an insulating buffer layer （two-step A1N buffer） between the high-temperature GaN layer and a sapphire substrate which blocks diffusion of oxygen and overcomes the weakness of generating high density carrier near interface of GaN and sapphire when a low-temperature GaN buffer is used. The result suggests that the high conductive feature of unintentionally doped GaN is mainly contributed from the highly conductive channel near interface between GaN and the sapphire substrate, which is indirectly manifested by room-temperature photoluminescence excited by an incident laser beam radiating on growth surface and on the substrate. The functions of the two-step A1N buffer layer in reducing screw dislocation and improving crystal quality of GaN are also discussed.     

Dislocation Reduction Mechanisms in Gallium Nitride Films Grown by Canti-Bridge Epitaxy Method

By using the special maskless V-grooved c-plane sapphire as the substrate, we previously developed a novel GaN LEO method, or the so-called canti-bridge epitaxy （CBE）, and consequently wing-tilt-free GaN films were obtained with low dislocation densities, with which all the conventional difficulties can be overcome [J. Vacuum Sci. Technol. B 23 （2005） 2476]. Here the evolution manner of dlslocations in the CBE GaN films is investigated using transmission electron microscopy. The mechanisms of dislocation reduction are discussed. Dislocation behaviour is found to be similar to that in the conventional LEO GaN films except the enhanced dislocation-combination at the coalescence boundary that is a major dislocation-reduction mechanism for the bent horizontal-propagating dislocations in the CBE GaN films. The enhancement of this dislocation-combination probability is believed to result from the inclined shape and the undulate morphology of the sidewalls, which can be readily obtained in a wide range of applicable film-growth conditions during the GaN CBE process. Further development of the GaN CBE method and better crystal-quality of the GaN film both are expected.     

模式识别技术用于果酸混合物分析

研究了偏最小二乘法和人工神经网络法用于水果的紫外可见多组分光度分析。当混合物中诸组分存在相互作用，光谱加和性受到 扰动时，ＰＬＳ法和ＡＮＮ法用于混和物的分析仍能得到较满意的结果。     

白马骨挥发油的GC-MS分析

采用水蒸气蒸馏法从白马骨中提取挥发油,再通过气-质联用(GC-MS)技术对所提取的挥发油的化学成分进行分离鉴定,共测定了其中的36种成分.已成功鉴定的成分占样品总量的93.39%,其主要成分为脂肪酸,占挥发油总量的74.23%,其次为烷烃化合物8.54%,酯类化合物3.96%,酮类化合物2.36%,烯烃化合物1.95%,醇类化合物1.71%,其它化合物(1个)仅占0.71%.     

基于线上评论的生鲜产品供应链定价策略

随着网络购物的普及,线上评论对消费者的购买决策发挥着越来越重要的作用,零售商和制造商可以利用这些评论调整、优化生产流程。本文基于消费者效用理论,构建了由一个零售商和一个制造商组成的生鲜产品供应链定价决策模型,研究了三种决策模式下生鲜产品零售价、利润和保鲜努力水平的差异。研究发现:集中决策下生鲜产品的最优零售价最低、利润最高;随着运输时间增加,保鲜努力水平和新鲜度均呈现下降趋势;当成本分担系数较高时,在成本分担和收益共享的分散决策模式下,保鲜努力最优水平高于集中决策模式下保鲜努力最优水平。     

罗丹明B-β-环糊精衍生物探针型主-客体分子相互识别作用的研究

应用光谱法研究了生物大分子探针型主体分子罗丹明B一β-环糊精衍生物与DNA的相互作用及温度对该探针特性的影响.探讨了相应的主体分子与DNA分子相互作用的方式、嵌插作用能力大小以及温度对主体分子含客体分子时的影响．进一步研究了探针型主一客体分子相互识别作用及作用能力的大小．探讨了主一客体分子相互识别作用的机制．     

罗丹明B—β—环糊精衍生物探针型主—客体分子相互识别？…

应用光谱法研究了生物大分子探针型主体分子罗丹明Ｂ－β－环糊精衍生物与ＤＮＡ的相互作用及温度对该探针特性的影响，探讨了相应的主体分子与ＤＮＡ分子相互作用的方式，嵌插作用能力大小以及温度对主体分子含客体分子时的影响，进一步研究了探针型主－客体分子相互识别作用及作用能力的大小，探讨了主－客体分子相互识别作用的机制。     

空间平面反射镜组件销钉预紧的非线性分析

介绍了产生结构非线性的主要来源与接触理论,对平面反射镜组件建立了合理的有限元模型.利用接触非线性分析方法分析了小重锤(m=0.18kg)在不同下落高度冲击销钉而对锥孔造成的法向压力;随后,将不同锥孔法向压力对镜面面形精度的影响进行了非线性和线性分析;然后,进行了空间平面反射镜的成像实验.分析与实验结果表明:采用非线性分析得到的面形精度比线性分析更接近实验值,非线性分析与实验值之间的最大误差为8.6%.由此对该空间平面反射镜组件提出了合理的销钉预紧方案,即小重锤最大自由下落高度不超过25mm.     

静电纺丝技术在新能源电池中应用的研究进展

简要介绍了五种新能源电池和静电纺丝技术,综述了静电纺丝技术用于锂电池的正负极材料和燃料电池电极材料的现状,以及应用静电纺丝技术制备电极隔膜材料。静电纺丝制备纳米纤维具有直径小、比表面积大、孔隙率高等特点,用于正负电极和隔膜材料将大大提高电池的比容量、充放电速率和充放电电流,从而提高电池的蓄电能力、循环性能、离子导电性、力学稳定性和化学稳定性。最后总结了静电纺丝技术产业化需要解决的问题,并展望了在新能源电池中的进一步应用。