全文获取类型
收费全文 | 104篇 |
免费 | 125篇 |
国内免费 | 20篇 |
专业分类
化学 | 42篇 |
晶体学 | 56篇 |
力学 | 4篇 |
数学 | 13篇 |
物理学 | 134篇 |
出版年
2023年 | 3篇 |
2022年 | 3篇 |
2021年 | 1篇 |
2020年 | 4篇 |
2019年 | 9篇 |
2018年 | 13篇 |
2017年 | 9篇 |
2016年 | 8篇 |
2015年 | 11篇 |
2014年 | 21篇 |
2013年 | 15篇 |
2012年 | 15篇 |
2011年 | 11篇 |
2010年 | 16篇 |
2009年 | 21篇 |
2008年 | 21篇 |
2007年 | 12篇 |
2006年 | 16篇 |
2005年 | 15篇 |
2004年 | 17篇 |
2003年 | 3篇 |
2002年 | 2篇 |
2001年 | 2篇 |
1997年 | 1篇 |
排序方式: 共有249条查询结果,搜索用时 46 毫秒
41.
Influence of local environment on the intensity of the localized surface plasmon polariton of Ag nanoparticles
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
A combined Ag nanoparticle with an insulating or conductive
layer structure has been designed for molecular detection using
surface enhanced Raman scattering microscopy. Optical absorption
studies revealed localized surface plasmon resonance, which shows
regular red shift with increasing environmental dielectric
constant. With the combined structure of surface enhanced Raman
scattering substrates and rhodamine 6G as a test molecule, the
results in this paper show that the absorption has a linear
relationship with the local electromagnetic field for insulating
substrates, and the electrical property of the substrate has a
non-negligible effect on the intensity of the local electromagnetic
field and hence the Raman enhancement. 相似文献
42.
本文研究了薄膜厚度对MOCVD技术制备未掺杂ZnO薄膜的微观结构和电学特性影响.XRD和SEM的研究结果表明,随着薄膜厚度的增加,ZnO薄膜(110)峰趋于择优取向,且晶粒逐渐长大,薄膜从球状和细长棒状演变为具有类金字塔绒面结构特征的ZnO薄膜;Hall测量表明,较厚的ZnO薄膜有助于提高薄膜电学特性,可归于晶粒长大和晶体质量提高.40min沉积时间(膜厚为1250nm)制备出的ZnO薄膜具有明显绒面结构,其晶粒尺寸为300~500nm,电阻率为7.9×10-3Ω·cm,迁移率为26.8cm2/Vs. 相似文献
43.
采用甚高频等离子化学气相沉积技术(VHF-PECVD)制备了系列p-i-n型微晶硅太阳电池,研究了电池有源层硅烷浓度的变化对电池性能的影响.结果发现:随着硅烷浓度的提高电池的短路电流密度先提高然后降低,转换效率与之有相同的变化趋势,而开路电压随硅烷浓度的提高而增加,这些变化来源于有源层材料结构的改变.电池的填充因子几乎不受硅烷浓度的影响,但受前电极的影响很大.不同系列电池转化效率的最高点虽然处于非晶到微晶的过渡区,但对应电池的晶化率不同.另外,研究结果也给出非晶/微晶过渡区随着辉光功率的提高和沉积气压的降低向高硅烷浓度方向转移. 相似文献
44.
Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
This paper studies boron contamination at the interface between the
p and i layers of μ c-Si:H solar cells deposited in a
single-chamber PECVD system. The boron depth profile in the i layer
was measured by Secondary Ion Mass Spectroscopy. It is found that
the mixed-phase μ c-Si:H materials with 40% crystalline
volume fraction is easy to be affected by the residual boron in the
reactor. The experimental results showed that a 500-nm thick μ
c-Si:H covering layer or a 30-seconds of hydrogen plasma treatment
can effectively reduce the boron contamination at the p/i interface.
However, from viewpoint of cost reduction, the hydrogen plasma
treatment is desirable for solar cell manufacture because the
substrate is not moved during the hydrogen plasma treatment. 相似文献
45.
46.
47.
48.
采用量子化学半经验方法RHF/AM1对4种六元杂环化合物进行水溶液中的构型优化, 经振动分析, 未出现虚频率。在此基础上用RHF/CIS方法分别计算了它们的荧光光谱, 并与其气相计算的结果进行了对比, 在水溶液中的计算结果能更好地符合实验值。 相似文献
49.
Fabrication of high growth rate solar-cell-quality μc-Si:H thin films by VHF-PECVD 总被引:4,自引:0,他引:4
下载免费PDF全文
![点击此处可从《中国物理》网站下载免费的PDF全文](/ch/ext_images/free.gif)
Several series of Si:H films were fabricated by the very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at different substrate temperatures (T_s) and silane concentration (SC=[SiH_4]/[SiH_4+H_2]%). The results of Raman spectroscopy showed structural evolution of the Si:H films with the variation of T_s and SC. The results of x-ray diffraction (XRD) measurements indicated that T_s also influences the crystal orientation of the Si:H films. The modulation effect of T_s on crystalline volume fraction (X_c) is more evident for the high SC, which shows different trend compared to low SC. In addition, the growth rate of the films also showed a regular change with the variation of SC and T_s. Different samples in the series showed a similar increase in dark conductivity and a decrease in photosensitivity with increasing T_s and decreasing SC. Device-quality microcrystalline silicon materials were deposited at a high growth rate, characterized by relatively low dark conductivity and relatively high photosensitivity in a certain crystalline range. The microcrystalline silicon solar cell with a conversion efficiency of 4.55% has been prepared by VHF-PECVD. 相似文献
50.
Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iVoc of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%. 相似文献