p种子层对单室制备微晶硅电池性能的影响

采用单室等离子体化学气相沉积技术沉积pin微晶硅电池时,硼污染降低了本征材料的晶化率并影响了p/i界面特性.针对该问题文中采用p种子层技术,即在沉积p层后采取高的H₂/SiH₄比率及适当的功率又沉积一个薄的p层,初步研究了p种子层对微晶硅i层纵向均匀性及电池性能的影响.实验结果表明：采用此方法能改善p/i界面特性,提高本征材料纵向结构的均匀性并降低硼对本征层的污染,有效地提高单结微晶硅电池的性能.最后,通过优化沉积条件,制备得到光电转换效率为881%（1 cm 关键词： 单室 甚高频等离子体增强化学气相沉积 微晶硅太阳电池 p种子层     

Q-Switched Large-Mode-Area Yb-Doped Fibre Laser Using GaAs as Saturable Absorber

A passive Q-switched large-mode-area Yb-doped fibre laser is demonstrated using a GaAs wafer as the saturable absorber. A high Yb doping concentration double-clad fibre with a core diameter of 30μm and a numerical aperture of 0.07 is used to increase the laser gain volume, permitting greater energy storage and higher output power than conventional fibres. The maximum average output power is 7.2W at 1080nm wavelength, with the shortest pulse duration of 580ns and the highest peak power of 161W when the laser is pumped with a 25W diode laser operating at 976nm. The repetition rate increases with the pump power linearly and the highest repetition rate of 77kHz is obtained in the experiment.     

响应面优化蒽酮-硫酸法测定水溶性沙棘叶多糖含量

采用水提醇沉法从沙棘叶中提取水溶性沙棘叶多糖(WPFH),通过响应面优化蒽酮-硫酸显色,用分光光度法测定沙棘叶水溶性多糖的总糖含量。通过单因素和响应面法确定了最佳蒽酮-硫酸显色条件:显色温度为100℃,蒽酮试剂的用量为3.54mL,显色时间为10.95min。测定波长620nm,葡萄糖质量浓度在6.67—160μg/mL范围内与吸光度呈良好的线性关系,r=0.9993。该方法简单可行,平均回收率为100.36%,RSD为2.75%。精制WPFH换算因子f为1.266。     

4种香豆素类化合物的结构和荧光光谱

采用量子化学中密度泛函理论(DFT)的B3LYP方法在6-311G基组下对4种香豆紊类化合物进行了构型优化,经振动分析,未出现虚频率。在此基础上用单激发态组态相互作用(CIS)方法在相同水平下分别计算了4种化合物气相的荧光光谱,所得计算值与实验值基本吻合。     

BEPCII丝靶束流截面测量系统

To monitor the beam profile at the end of the linac non-destructively, a wire scanner as a new diagnostic instrument was designed, manufactured and installed in 2007. Since then, several measurements have been carried out using this device. This paper describes the whole system of the wire scanner and the testing results.     

Al2O3薄膜/纳米Ag颗粒复合结构的光吸收谱及增强Raman散射光谱研究

Al₂O₃介质薄膜与纳米Ag颗粒构成的复合结构,被应用于表面增强Raman散射探测实验中,其中Al₂O₃介质薄膜对纳米Ag颗粒的吸收谱及增强Raman散射光谱的影响被特别关注.该复合结构的光学特性表征出纳米Ag颗粒的偶极振荡特性.从光吸收谱中可以看到,其共振吸收谱随Al₂O₃介质薄膜厚度增加而在整个谱域上发生红移,表明纳米Ag颗粒的周围介电常数随Al₂O₃介质薄膜厚度的增加而增大.采用罗丹明6G作为探针原子,6个Raman特征峰的平均增益值作为表征表面增强Raman散射衬底增益程度的量度.实验结果表明,Al₂O₃介质薄膜层的引入提高了纳米Ag颗粒的衬底介电常数,并引起了散射共振的增强,从而使表面增强Raman散射强度提高. 关键词： 纳米Ag薄膜 共振吸收 表面增强Raman散射 介电常数     

溶剂对磷光上转换纳米材料性能的影响

采用水热法,并在EDTA加入前后,分别以去离子水、乙醇为反应溶剂的体系中,合成了掺杂18;Yb3+、2;Er3+的NaYF4磷光上转换纳米材料.实验表明,当EDTA∶ Ln3+(Ln=Y,Yb,和Er)的比例为1.6∶ 1时,在以乙醇为反应溶剂的体系中所得的材料在无需高温处理的情况下,得到了六角晶相较纯、颗粒分散较好、粒度大小均匀的上转换发光材料.且材料在可见光区具有较高的发射强度,适于应用到太阳能电池上.     

W掺杂ZnO透明导电薄膜的理论及实验研究

本文从理论与实验两方面入手, 对高价态差金属W掺杂ZnO (WZO) 薄膜材料的特性进行分析讨论. 采用基于密度泛函理论的平面波赝势方法对WZO材料特性进行理论分析, 计算结果表明: W以替位形式掺入ZnO六角纤锌矿晶格结构中, 由于W-O键的键长较长引起晶格常数增加, 产生晶格畸变; 掺杂后费米能级进入导带, 其附近的导电电子主要由W 5d, O 2p及Zn 3d电子轨道提供, 材料表现出n型半导体的特性; 同时能带简并效应使其光学带隙展宽. 为进一步验证该理论分析结果的适用性, 本文采用脉冲直流磁控溅射技术进行了本征ZnO及WZO薄膜的实验研究, 结果表明: W掺入未改变ZnO的生长方式, 但引起薄膜的晶格常数增加, 电阻率由本征ZnO的1.35× 10^-2 Ω·cm减小到1.55× 10^-3 Ω·cm, 光学带隙由3.27 eV展宽到3.48 eV. 制备的WZO薄膜在400-1100 nm的平均透过率大于83%. 实验结果对理论计算结果进行了验证, 表明WZO薄膜作为透明导电薄膜的应用潜力.     

Evolution of infrared spectra and optical emission spectra in hydrogenated silicon thin films prepared by VHF-PECVD

A series of hydrogenated silicon thin films with varying silane concentrations have been deposited by using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The deposition process and the silicon thin films are studied by using optical emission spectroscopy (OES) and Fourier transfer infrared (FTIR) spectroscopy, respectively. The results show that when the silane concentration changes from 10% to 1%, the peak frequency of the Si—H stretching mode shifts from 2000 cm ^{- 1} to 2100 cm ^{- 1}, while the peak frequency of the Si—H wagging—rocking mode shifts from 650 cm ^{- 1} to 620 cm ^{- 1}. At the same time the SiH^*/H_α intensity ratio in the plasma decreases gradually. The evolution of the infrared spectra and the optical emission spectra demonstrates a morphological phase transition from amorphous silicon (a-Si:H) to microcrystalline silicon (μc-Si:H). The structural evolution and the μc-Si:H formation have been analyzed based on the variation of H_α and SiH^* intensities in the plasma. The role of oxygen impurity during the plasma process and in the silicon films is also discussed in this study.     

BEPCⅡ束流损失探测系统及其初步应用

束流寿命是衡量储存环性能的重要参数,它直接影响到储存环能否正常运行.采用束流损失探测系统通过探测束流损失的地点,可以为分析束损原因、优化机器参数和提高束流寿命提供依据.介绍了北京正负电子对撞机重大改造工程(BEPC Ⅱ)束流损失探测系统的基本情况:前端束流损失探测器输出的脉冲信号送到下位机进行处理,通过CAN总线将所有的下位机连接到位于本地站的前端PC机,此PC机再通过以太网与中控室的PC机或工作站进行数据通讯,最终实现对束流损失的实时监测、数据存储,并能对历史数据进行处理,达到实时显示全环束损分布的目的.文章最后还简要介绍了整个系统在BEPC Ⅱ调束过程中的初步应用.