Astrophysical Reaction Rates of the ^8Li（p, τ）^9Beg.s. Direct Capture Reaction

Based on the angular distribution of the ^8Li（d, n）^9Beg.s, reaction at Ec.m. = 8.0 MeV and distorted wave Born approximation analysis, the single particle spectroscopic factor S1,3/2 for the ground state of ^9Be = ^8Li×p is derived to be 0.64 ± 0.21. In addition, we deduce the astrophysical S-factors and rates of the ^8Li（p, γ）^9Beg.s. direct capture reaction at energies of astrophysical interests.     

高能量γ射线刻度源装置

在核物理实验和γ剂量探测中,γ射线探测器,如 Ge(Li),HpGe,Nal(T1)和 BGO等都需要刻度能量线性和相对效率.在兆电子伏能区,在加速器上可以利用不同的核反应获得不同能量γ射线.但在没有加速器的地方则无法进行.我们利用一个～105中子/s的Am-Be中子源制成了高能量γ射线刻度源装置.实验装置见图1.这个装置简单、方便.对于没有加速器的地方尤为实用. 一个原子核俘获一个热中子后,由于中子结合能,复合核将处在较高的激发态,它在退激时放出特征的单色γ射线,其能量由激发态的能级决定.一般来说,俘获γ射线谱是多线结构的,但是在高能部分,…     

北京自由电子激光注入器输运线的设计与研制

注入器输运线由α磁铁、四极磁铁、真空盒和束测元件组成，对输运线中的物理问题诸如聚束、横向匹配、注入时间调整、准直误差等进行讨论。在介绍了各主要元件的性能之后，给出输运线设计参数和研制结果。     

Performance Improvement of Distributed and Discrete Raman Amplifiers with a Fibre Loop Mirror

We use a fibre loop mirror to reflect the residual pump power (RPP) into the fibre for solving the problems of the RPP in Raman amplifiers. The experimental results show that the novel hi-directional pumping scheme without adding extra pump lasers is effective, and higher gain and lower noise are obtained for both the distributed and the discrete Raman amplifiers.     

Picosecond Pulse Laser Microstructuring of silicon

We report the experimental results of picosecond pulse laser microstructurlng (pulse duration 35 ps, wavelength 1.06μm, repetition rate 10 Hz) of silicon using the direct focusing technique. Arrays of sharp coldcal spikes located below the initial surface have been formed by cumulative picosecond pulsed laser irradiation of silicon in SF6. Irradiation of silicon surface in air, N2, or vacuum creates ripple-like patterns, but does not create the sharp conical spikes.     

High-Power Er^3＋／Yb^3＋ Codoped Double-Cladding Fibre Amplifier with More Than 2 W Output Power

A high-power Er^3 /Yb^3 -codoped double-cladding all-fibre amplifier was successfully demonstrated and exper-imentally investigated. The amplifier could be operated with a maximum output power of 2.18 W and 2.11 Wat 1541nm and 1550nm wavelengths, respectively, when the maximum pump power was 6.07W. The powerconversion effciency was up to 35.6% and 34.4% at the two wavelengths, respectively. The output power and the gain were greater than 2.00 W and 20.OdB, respectively, in the wavelength range from 1539nm to 1565nmfor 20.OmW input signal power. The gain fluctuation and the noise figure around 1550nm wavelength were less than 0.3 dB and 6.0 dB, respectively.     

3D depth-coded photoacoustic microscopy with a large field of view for human skin imaging

Photoacoustic(PA) microscopy comes with high potential for human skin imaging, since it allows noninvasively high-resolution imaging of the natural hemoglobin at depths of several millimeters. Here, we developed a PA microscopy to achieve high-resolution, high-contrast, and large field of view imaging of skin. A three-dimensional(3D) depth-coding technology was used to encode the depth information in PA images, which is very intuitive for identifying the depth of blood vessels in a two-dimensional image, and the vascular structure can be analyzed at different depths. Imaging results demonstrate that the 3D depth-coded PA microscopy should be translated from the bench to the bedside.     

《半导体三极管的放大原理》教学探讨

本文通过对教材的分析，探讨了半导体三极管放大原理的教学过程和方法。     

基于狭缝扫描的表面等离子体共振成像

利用表面等离子体共振技术进行电介质样品成像研究.采用高数值孔径显微物镜作为耦合元件,632.8nm He-Ne激光会聚激发金膜产生表面等离子体共振,通过狭缝光阑限制光束入射角,对金膜上的氮化硅光栅进行成像.反射光由放置在样品像方共轭面上的CCD摄像机接收,获得样品的表面等离子体共振像.通过扫描移动狭缝,得到入射角从44°至54°的扫描样品图像,从图像中提取样品各点的表面等离子体共振曲线,由计算机重构出样品的表面等离子体共振角谱灰度图.     

Compositional and Structural Properties of TiO2-xNx Thin Films Deposited by Radio-Frequency Magnetron Sputtering

TiO2-xNx thin films are deposited onto Si（100） and quartz substrates by arf magnetron sputtering method using a titanium metal disc as a target in Ar, N2, and 02 atmospheres. The substrate temperature is kept at 300℃. The O2 and Ar gas flow rates are kept to be constants and the N gas flow rate is varied. TiO2-xNx films with different N contents are characterized by x-ray diffraction and x-ray photoelectron spectroscopy. The results indicate that the TiO2-xNx thin films can be obtained at 13% N and 15% N contents in the film, and the films with mixed TiO2 and TiN crystal can be obtained at 13% N and 15% N contents in the film. In terms of the results of x-ray photoelectron spectroscopy, N ls of β-N （396 eV） is the main component in the TiO2-xNx thin films. Because the energy level of β-N is positioned above the valence-band maximum of TiO2, an effective optical-energy gap decreases from 2.8 eV （for pure TiO2 film deposited by the same rf sputtering system） to 2.3 eV, which is verified by the optical-absorption spectra.