Dynamic Localization Condition of Two Electrons in a Strong dc-ac Biased Quantum Dot Molecule

We present a perturbation investigation of dynamic localization condition of two electrons in a strong dc-ac biased quantum dot molecule.By reducing the system to an Hubbard-type effective two-site model and by applying Floquet theory,we find that the dynamical localization phenomenon occurs under certain values of the large strength of the dc and ac field.This demonstrates the possibility of using appropriate dc-ac fields to manipulate dynamical localized states in mesoscopic devices,which is an essential component of practical schemesfor quantum information processing.Our conclusion is instructive to the field of quantum function devices.     

Intrinsic Hall effect and separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells

We have proposed a method to separate Rashba and Dresselhaus spin splittings in semiconductor quantum wells by using the intrinsic Hall effect. It is shown that the interference between Rashba and Dresselhaus terms can deflect the electrons in opposite transverse directions with a change of sign in the macroscopic Hall current, thus providing an alternative way to determine the different contributions to the spin--orbit coupling.     

电声子相互作用对半导体超晶格动力学局域化的影响

本文用单带模型分别研究了直流外场和交流外场作用下，电声子相互作用对半导体超晶格的动力学局域化性质的影响。结果表明：电声子相互作用会破坏电子的动力学局域化。对同一声子频率，电声子相互作用的强度越大，电子越快被散射；当声子频率等于直流场的布洛赫频率或交流场频率时，初始局域在某一格点的电子被迅速地散射到其他格点上去，亦即光声子共振场会严重破坏电子的动力学局域化性质。     

原子氢在Be(100)薄膜上吸附的第一性原理计算

对原子氢在Be(1010)薄膜表面的吸附性质做了第一性原理计算研究.根据原子面间距的不同,可把Be(1010)表面分为两种.计算结果表明,原子氢在这两种表面上的吸附性质显著不同.为阐明和分析这些不同,系统计算和分析了Be(1010)薄膜的表面电子结构、电子功函数、平均静电势和局域电荷密度.这些物理量都自洽地表明,吸附过程中原子氢和表面铍原子间的电荷转移过程对于两种表面是完全不同的.对于L型表面来说,电荷由吸附原子氢向表面Be原子层转移,而对于S型表面而言,电荷转移过程恰恰相反.     

Effects of bias on dynamics of an AC-driven two-electron quantum-dot molecule

The effects of bias on the dynamical localization of two interacting electrons in a pair of coupled quantum dots driven by external AC fields have been numerically investigated. With an effective two-site model and Floquet formalism,the time-dependent Schroedinger equation is numerically solved and the Pmin, the minimum of the population evolution of the initial state within a certain time period, is used to quantify the degree of the dynamical localization. Results indicate that the bias can change the energy of the initial state and break the dynamical symmetry of the system with a pure AC field. And the amplitude of the AC field with dynamical localization phenomenon changes with bias. All the numerical results are explained by the perturbation theory and two-level approximation.     

费米子与固定双子的束缚态能级

本文讨论了荷电费米子与固定狄拉克双荷子相互作用系统的束缚态,给出了最低角动量j=|q|-1/2≥0和总角动量j≥|q|+1/2的全部能级的表达式,结果表明,系统能级对所有角量子数j≥|q|-1/2≥0都是简并的,这意味着引入额外磁矩项和相互作用项修正后的哈密顿量的对称性有了明显的提高。     

Quantum control of two interacting electrons in a coupled quantum dot

Quantum-state engineering, i.e. active manipulation over the coherent dynamics of suitable quantum-mechanical systems, has become a fascinating prospect of modern physics. Here we discuss the dynamics of two interacting electrons in a coupled quantum dot driven by an external electric field. The results show that the two quantum dots can be used to prepare a maximally entangled Bell state by changing the strength and duration of an oscillatory electric field. Different from the suggestion made by Loss \textit et al (1998 Phys. Rev. A 57 120, the present entanglement involves the spatial degree of freedom for the two electrons. We also find that the coherent tunnelling suppression discussed by Grossmann \textit et al (1991 Phys. Rev. Lett. 67 516 persists in the two-particle case: i.e. two electrons initially localized in one dot can remain dynamically localized, although the strong Coulomb repulsion prevents them from behaving so. Surprisingly, the interaction enhances the degree of localization to a large extent compared with that in the non-interacting case. This phenomenon is referred to as the Coulomb-enhanced dynamical localization.     

Dynamic dc voltage band in vertical transport of superlattices

By the numerical method, we show a transition process from static to dynamic electric-field domain formation in semiconductor superlattices. During this transition, there can be noticed a sawtooth-like zone in which static and dynamic electric-field domain zones appear alternatively with increasing voltage. Therefore, a dynamic dc voltage band emerges from each sawtooth-like branch of the current－voltage characteristic. These results are qualitatively in agreement with experiment.     

Effects of a donor on the bond property of quantum-dot molecules

Within the framework of effective mass approximation, we have calculated the electronic structure of the two laterally coupled quantum dots with a donor by the finite element method. The calculated results show that the bond states of quantum-dot molecules are quite sensitive to the donor positions. By varying the donor position, the transition from covalent to ionic bond state is realized for some electronic states. Some extreme cases are also discussed for comparison.