First-principles study of Ga7As7 ionic cluster and influence of multi-charge on its structure

This paper investigates the structures and stabilities of neutral Ga7As7 cluster and its ions in detail by using first-principles density functional theory. Many low energy structures of Ga7As7 cluster are found. It confirms that the ground state structure of neutral Ga7As7 cluster is a pentagonal prism with four face atoms like a basket structure, as reported by previous works. The ground state structures of positive Ga7As7 cluster ions are different from that of the neutral cluster. These investigations suggest that Ga atoms occupy the capping positions more easily than As atoms. Mulliken population analyses also show that Ga atoms can lose or obtain charge more easily than As atoms. It finds that the neutral Ga7As7 cluster can become more stable by gaining one or two additional electrons but further more electrons would cause the decrease of binding energy. The ionisation energy increases with the increase of the number of the removed electrons. These calculated results indicate that the net magnetic moment of the neutral Ga7As7 cluster is zero because all electrons are paired together in their respective molecular orbits. But for the ionic Ga7As7 cluster with odd number of electrons, the net magnetic moment is 1.0 μB due to an unpaired electron.     

A New Conserved Quantity Corresponding to Mei Symmetry of Tzenoff Equations for Nonholonomic Systems

A new conserved quantity is investigated by utilizing the definition and discriminant equation of Mei symmetry of Tzénoff equations for nonholonomic systems. In addition, the expression of this conserved quantity, and the determining condition induced new conserved quantity are also presented.     

可接入射频半实物的试验数据转换系统设计与实现

试验环节是产品研制生命周期中的重要环节,但是一直以来都缺乏有效的管理手段,在整个测试阶段都存在大量的人为的、重复性的工作,导致试验效率低下,为改善这一现状,提高试验效率,提出了一种基于PXIe数据采集系统,借助LabVIEW和DIAdem软件的测试系统解决方案：以LabVIEW控制数据高速同步采集,DIAdem调用LabVIEW模块执行算法分析,通过软件集成,实现对测试系统的全面管理,包括数据采集、数据检索、数据分析、报表生成及整个流程的自动化控制。本文以C919飞机电源测试系统为介绍对象,对该套测试系统解决方案进行阐述,实际测试情况表明,在数据吞吐率大于200M/S的情况下,相对传统测试方法,该测试方案在保证测试精度的基础上,极大的提高了试验效率,极大的提高了系统的可扩展性和可维护性。     

利用Keating模型计算Si(1-χ)Geχ及非晶硅的拉曼频移

利用Keating模型计算了Si(1-χ)Geχ合金中Si-Si,Ge-Ge和Si-Ge三种振动模态的拉曼频移,计算分别获得Ge浓度为0.1,0.5和0.9时,Si-Ge的振动拉曼频移分别为402.75,413.39和388.15 cm-1,这些结果与文献的实验结果符合,证明了Keating模型建立的关于原子振动模型是有效的,并可以利用拉伸压缩和相邻原子键之间弹性系数变化获得处于应变状态的拉曼光谱频率.利用Keating模型首次计算得到了非晶硅材料的单声子散射峰为477.029 cm-1,与文献实验结果480.0 cm-1相近,说明了非晶硅中原子的总体效果与晶体硅相比处于拉伸状态.     

Ultrasonic Vibration Suspends Large Pendant Drops

A stationary substrate can suspend only small pendant drops even with excellent wetting ability because of gravity. We report the suspension of large pendant water drops by a copper substrate that vibrates ultrasonically with a frequency of 22 kHz. The mass of the largest pendant drop suspended by the vibrating substrate reaches 1.1 g, which is 9 times that by the same stationary substrate. The pendant drop deforms drasticaJly and quickly at both the beginning and the end of the vibration procedure. As the vibration power increases, the contact area between the drop and substrate expands and the drop height shrinks accordingly. Theoretical analysis indicates that the Bernoulli pressure induced by ultrasonic vibration may contribute strongly to enhancing the suspensibility of pendant drops.     

具有存储功能的衍射图像光刻系统的研制

研制了一种在衍射光变图像器件上进行信息存储的新型数字化激光光刻系统。采用空间光调制器作图形自动输入,双远心投影成像系统在光刻记录面上缩微图形。通过光栅干涉光学头对记录面上的微图形进行干涉调制,使微图形上产生干涉条纹,条纹空间频率范围为500-1200lp／mm。在光刻胶干版上的存储实验表明,在衍射光变图像上的单角度存储信息密度大于3．7Mbit／cm^2。改变干涉条纹取向、条纹间隔和需要存储的图形,光刻系统可实现信息的旋转复用存储。上述光刻系统将会在防伪和衍射光变图像器件制造领域有良好应用。     

具有纵向辅助耗尽衬底层的新型横向双扩散金属氧化物半导体场效应晶体管

为了优化横向双扩散金属氧化物半导体场效应晶体管(lateral double-diffused MOSFET,LDMOS)的击穿特性及器件性能,在传统LDMOS结构的基础上,提出了一种具有纵向辅助耗尽衬底层(assisted depletesubstrate layer,ADSL)的新型LDMOS.新加入的ADSL层使得漏端下方的纵向耗尽区大幅向衬底扩展,从而利用电场调制效应在ADSL层底部引入新的电场峰,使纵向电场得到优化,同时横向表面电场也因为电场调制效应而得到了优化.通过ISE仿真表明,当传统LDMOS与ADSL LDMOS的漂移区长度都是70μm时,击穿电压由462 V增大到897 V,提高了94%左右,并且优值也从0.55 MW/cm~2提升到1.24 MW/cm~2,提升了125%.因此,新结构ADSL LDMOS的器件性能较传统LDMOS有了极大的提升.进一步对ADSL层进行分区掺杂优化,在新结构的基础上,击穿电压在双分区时上升到938 V,三分区时为947 V.     

具有部分本征GaN帽层新型AlGaN/GaN高电子迁移率晶体管特性分析

为了优化传统Al GaN/GaN高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件的表面电场,提高击穿电压,本文提出了一种具有部分本征GaN帽层的新型Al GaN/GaN HEMTs器件结构.新型结构通过在Al GaN势垒层顶部、栅电极到漏电极的漂移区之间引入部分本征GaN帽层,由于本征GaN帽层和Al GaN势垒层界面处的极化效应,降低了沟道二维电子气(two dimensional electron gas,2DEG)的浓度,形成了栅边缘低浓度2DEG区域,使得沟道2DEG浓度分区,由均匀分布变为阶梯分布.通过调制沟道2DEG的浓度分布,从而调制了Al GaN/GaN HEMTs器件的表面电场.利用电场调制效应,产生了新的电场峰,且有效降低了栅边缘的高峰电场,Al GaN/GaN HEMTs器件的表面电场分布更加均匀.利用ISE-TCAD软件仿真分析得出:通过设计一定厚度和长度的本征GaN帽层,Al GaN/GaN HEMTs器件的击穿电压从传统结构的427 V提高到新型结构的960 V.由于沟道2DEG浓度减小,沟道电阻增加,使得新型Al GaN/GaN HEMTs器件的最大输出电流减小了9.2%,截止频率几乎保持不变,而最大振荡频率提高了12%.     

面向航天型号软件缺陷预测的属性选择方法

针对当前航天型号软件模块故障预测中度量属性过多而影响分类模型效率、准确率和数据收集困难的问题,以NASA公布的MDP数据集为基础,设计了基于Logistic回归模型的属性选择算法;通过该算法在6个数据集上的应用选择了对航天型号软件质量影响较大的4个属性,并将其在12个软件中进行验证,说明了该算法的有效性,选择的4个度量属性可为当前航天型号软件的度量提供参考和依据。     

Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench

A lateral insulated gate bipolar transistor (LIGBT) based on silicon-on-insulator (SOI) structure is proposed and investigated. This device features a compound dielectric buried layer (CDBL) and an assistant-depletion trench (ADT). The CDBL is employed to introduce two high electric field peaks that optimize the electric field distributions and that, under the same breakdown voltage (BV) condition, allow the CDBL to acquire a drift region of shorter length and a smaller number of stored carriers. Reducing their numbers helps in fast-switching. Furthermore, the ADT contributes to the rapid extraction of the stored carriers from the drift region as well as the formation of an additional heat-flow channel. The simulation results show that the BV of the proposed LIGBT is increased by 113% compared with the conventional SOI LIGBT of the same length L_D. Contrastingly, the length of the drift region of the proposed device (11.2 μ) is about one third that of a traditional device (33 μ) with the same BV of 141 V. Therefore, the turn-off loss (E_OFF) of the CDBL SOI LIGBT is decreased by 88.7% compared with a conventional SOI LIGBT when the forward voltage drop (V_F) is 1.64 V. Moreover, the short-circuit failure time of the proposed device is 45% longer than that of the conventional SOI LIGBT. Therefor, the proposed CDBL SOI LIGBT exhibits a better V_F-E_OFF tradeoff and an improved short-circuit robustness.