Simulating the resonance-mediated (1+2)-three-photon absorption enhancement in Pr3+ ions by a rectangle phase modulation

Enhancing the upconversion luminescence of rare earth ions is crucial for their applications in the laser sources, fiber optic communications, color displays, biolabeling, and biomedical sensors. In this paper, we theoretically study the resonance-mediated (1+2)-three-photon absorption in Pr³⁺ ions by a rectangle phase modulation. The results show that the resonance-mediated (1+2)-three-photon absorption can be effectively enhanced by properly designing the depth and width of the rectangle phase modulation, which can be attributed to the constructive interference between on-resonant and near-resonant three-photon excitation pathways. Further, the enhancement efficiency of resonance-mediated (1+2)-three-photon absorption can be affected by the pulse width (or spectral bandwidth) of femtosecond laser field, final state transition frequency, and absorption bandwidths. This research can provide a clear physical picture for understanding and controlling the multi-photon absorption in rare-earth ions, and also can provide theoretical guidance for improving the up-conversion luminescence.     

具有N型缓冲层REBULF Super Junction LDMOS

针对功率集成电路对低损耗LDMOS (lateral double-diffused MOSFET)类器件的要求,在N型缓冲层super junction LDMOS (buffered SJ-LDMOS)结构基础上, 提出了一种具有N型缓冲层的REBULF (reduced BULk field) super junction LDMOS结构. 这种结构不但消除了N沟道SJ-LDMOS由于P型衬底带来的衬底辅助耗尽效应问题, 使super junction的N区和P区电荷完全补偿, 而且同时利用REBULF的部分N型缓冲层电场调制效应, 在表面电场分布中引入新的电场峰而使横向表面电场分布均匀, 提高了器件的击穿电压. 通过优化部分N型埋层的位置和参数, 利用仿真软件ISE分析表明, 新型REBULF SJ-LDMOS 的击穿电压较一般LDMOS提高了49%左右, 较文献提出的buffered SJ-LDMOS结构提高了30%左右. 关键词： lateral double-diffused MOSFET super junction 击穿电压 表面电场     

阶梯AlGaN外延新型Al_(0.25)Ga_(0.75)N/GaNHEMTs击穿特性分析

为了优化AlGaN/GaN HEMTs器件表面电场,提高击穿电压,本文首次提出了一种新型阶梯AlGaN/GaN HEMTs结构.新结构利用AlGaN/GaN异质结形成的2DEG浓度随外延AlGaN层厚度降低而减小的规律,通过减薄靠近栅边缘外延的AlGaN层,使沟道2DEG浓度分区,形成栅边缘低浓度2DEG区,低的2DEG使阶梯AlGaN交界出现新的电场峰,新电场峰的出现有效降低了栅边缘的高峰电场,优化了AlGaN/GaN HEMTs器件的表面电场分布,使器件击穿电压从传统结构的446 V,提高到新结构的640 V.为了获得与实际测试结果一致的击穿曲线,本文在GaN缓冲层中设定了一定浓度的受主型缺陷,通过仿真分析验证了国际上外延GaN缓冲层时掺入受主型离子的原因,并通过仿真分析获得了与实际测试结果一致的击穿曲线.     

新型缓冲层分区电场调制横向双扩散超结功率器件

为了突破传统横向双扩散金属-氧化物-半导体器件(lateral double-diffused MOSFET)击穿电压与比导通电阻的极限关系,本文在缓冲层横向双扩散超结功率器件(super junction LDMOS-SJ LDMOS)结构基础上,提出了具有缓冲层分区新型SJ-LDMOS结构.新结构利用电场调制效应将分区缓冲层产生的电场峰引入超结(super junction)表面而优化了SJ-LDMOS的表面电场分布,缓解了横向LDMOS器件由于受纵向电场影响使横向电场分布不均匀、横向单位耐压量低的问题.利用仿真分析软件ISE分析表明,优化条件下,当缓冲层分区为3时,提出的缓冲层分区SJ-LDMOS表面电场最优,击穿电压达到饱和时较一般LDMOS结构提高了50%左右,较缓冲层SJ-LDMOS结构提高了32%左右,横向单位耐压量达到18.48 V/μm.击穿电压为382 V的缓冲层分区SJ-LDMOS,比导通电阻为25.6 mΩ·cm2,突破了一般LDMOS击穿电压为254 V时比导通电阻为71.8 mΩ·cm2的极限关系.     

碳纳米管纤维及薄膜的热导率和热扩散率研究

宏观碳纳米管(Carbon nanotube,CNT)薄膜的成功制备是发展有机热电材料的一个重要方向。由于CNT薄膜厚度仅为200 nm且多孔、粗糙度大,对其热学特性表征极为困难。本文提出应用3ω技术测量由单壁(Single-walled,SW)CNT薄膜卷曲成的宏观纤维的热导率和热扩散率,讨论了卷曲层数对结果的影响及估算薄膜面向热导率和热扩散率的思路。所研究的两个SWCNT薄膜的面向热导率为3.4 W/(m·K)和2.0 W/(m·K),热扩散率为24 mm~2/s和21mm~2/s。结果表明SWCNT薄膜将为发展低成本有机热电材料领域做出贡献。     

Painlevé Analysis,Soliton Collision and B?cklund Transformation for the (3+1)-Dimensional Variable-Coefficient Kadomtsev–Petviashvili Equation in Fluids or Plasmas

In this paper, we investigate a(3+1)-dimensional generalized variable-coefficient Kadomtsev–Petviashvili equation, which can describe the nonlinear phenomena in fluids or plasmas. Painlev′e analysis is performed for us to study the integrability, and we find that the equation is not completely integrable. By virtue of the binary Bell polynomials,bilinear form and soliton solutions are obtained, and B¨acklund transformation in the binary-Bell-polynomial form and bilinear form are derived. Soliton collisions are graphically discussed: the solitons keep their original shapes unchanged after the collision except for the phase shifts. Variable coefficients are seen to affect the motion of solitons: when the variable coefficients are chosen as the constants, solitons keep their directions unchanged during the collision; with the variable coefficients as the functions of the temporal coordinate, the one soliton changes its direction.     

线性随机时滞微分方程裂步Milstein方法的收敛性(英文)

给出一个新的求解线性随机时滞微分方程的显式分裂步长Milstein格式.运用ItoTaylor展开式证明该格式相对于已有的求解随机时滞微分方程的分裂步长方法而言具有更好的收敛性.数值实验验证了理论分析的正确性.     

光学元件损伤在线检测中的图像处理

 利用在传统的边缘提取方法上加入灰度抑制,并在梯度计算中考虑每个像素与周围8个邻域的关系的图像处理方法,解决了在线检测中被检测元件以布儒斯特角放置、元件片数较多、CCD所采集的损伤图像噪声成分复杂等造成的像质较差的图像处理问题,并系统地进行了光学元件疵点分析和计算。分析计算结果表明:此图像处理方法得到的损伤疵点尺寸与实际尺寸相符,误差在检测的范围内;为大型光学系统中光学元件损伤的在线、自动化检测提供了一种有用的技术途径。     

面向消费者众筹的融资目标额决策研究

众筹是一种新型的商业模式,而融资目标额的制定是决定众筹项目成败的关键因素.考察一个面向消费者的众筹项目如何制定项目的融资目标额问题.将消费者参与众筹的效用区分为随机的、相互独立的商品效用和体验效用,并假设体验效用服从[0,H]上的均匀分布.首先假设H为确定参数,构建消费者众筹决策模型,从而得到项目众筹目标额与体验效用参数H之间的反应方程.进而将H视为随机变量,在融资目标期望值最大化原则下优化决策基准h,并给出基于给定成功概率的融资目标额.研究表明,基于悲观法则,通过H范围的下限确定融资目标额是可行的.