A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector

We present a method to extend the operating wavelength of the interband transition quantum well photodetector from an extended short-wavelength infrared region to a middle-wavelength infrared region. In the modified In As Sb quantum well, Ga Sb is replaced with Al Sb/Al Ga Sb, the valence band of the barrier material is lowered, the first restricted energy level is higher than the valence band of the barrier material, the energy band structure forms type-II structure. The photocurrent spectrum manifest that the fabricated photodetector exhibits a response range from 1.9 μm to 3.2 μm with two peaks at 2.18 μm and 3.03 μm at 78 K.     

钙钒青铜/碳纳米管复合材料的 制备及电化学性能

采用水热法制备了具有二维层状结构的钙钒青铜(Ca_xV₂O₅·nH₂O, CVO)水系锌离子电池钒基正极材料, 并通过调控前驱体溶液中碳纳米管的含量, 得到3种钙钒青铜/碳纳米管复合材料(CVO@CNTs). 利用X射线衍射、 热重分析、 扫描电子显微镜和透射电子显微镜等对材料进行了表征. 结果表明, 所制备的CVO呈纳米带形貌, 长约十几微米, 宽约几百纳米, 选区电子衍射测试表明所得材料为单晶结构. 循环伏安测试结果表明, CVO和CVO@CNTs均具有多个氧化还原峰, 储锌机制包括赝电容行为和电池行为. 在放电倍率1C(1C=300 mA/g)测试条件下, CVO纳米带比容量稳定在210.1 mA·h/g; 与CNTs复合后, CVO@CNTs复合材料的电荷转移阻抗降低, 在相同测试条件下表现出更高的比容量和优异的倍率性能. 其中, CVO@CNTs-40表现出最高的比容量, 在1C倍率测试条件下的比容量可达274.3 mA·h/g, 即使在20C的测试条件下放电比容量仍可达85.2 mA·h/g, 且循环1000次后容量保持率能达到92%.     

无机刚性粒子增韧聚丙烯的影响因素

简要介绍了无机刚性粒子对聚丙烯(PP)的增韧机理,并着重介绍了利用无机刚性粒子增韧PP时,PP基体、无机刚性粒子的性质及用量、无机刚性粒子在PP基体中的分散情况、无机刚性粒子与PP基体间的界面相互作用等因素对增韧效果的影响。     

Preparation and characterization of room-temperature ferromagnetism GaMnN based on ion implantation

This paper reports the fabrication of GaMnN ferromagnetic semiconductor on GaN substrate by high-dose Mn ion implantation. Both the structural and optical properties for Mn+-implanted GaN material were studied by X-ray diffraction, Raman scattering and photolumi-nescence. The results reveal that the implanted manganese incorporates on Ga site and GaMnN ternary phase is formed in the substrate. The magnetic behavior has been characterized by superconducting quantum interference device. The material shows room-temperature ferromagnet-ism. The temperature-dependent magnetization indicates different mechanism for ferromagnetism in Mn+-implanted GaN.     

本刊加入《中国学术期刊(光盘版)》和“中国期刊网”的声明

为适应我国信息化建设需要,扩大作者学术交流渠道,本刊加入《中国学术期 刊(光盘版)》和“中国期刊网”。作者著作权使用费与本刊稿酬一次性给付。如作者不同意 将文章编入该数据库,请在来稿时声明,本刊将作适当处理。 本刊加入万方数据(ChinaInfo)系统科技期刊群的声明 　　为了实现科技期刊编辑、出版发行工作的电子化,推进科技信息交流的网络化进程,我刊现 已入网“万方数据(ChinaInfo)系统科技期刊群”。所以,向本刊投稿并录用的稿件文章, 将一律由编辑部统一纳入万方数据(ChinaInfo)系统,进行因特网提供信息服务。凡有不同 意者,请在来稿时声明,本刊将作适当处理。本刊所付稿酬包含刊物内容上网服务报酬,不 再另付。 《光谱实验室》编辑部     

花粉中微量元素Fe、Zn、Cu、Mn的蛋白质结合态研究

以油菜、玉米、茶及莲花粉为实验材料,应用原子吸收分光光度法测定了4种花粉中微量元素Fe,Zn,Cu,Mn的蛋白质结合态含量及形态分布。结果表明：花粉Fe元素蛋白质结合态含量分布最高,平均达41．44％,Mn元素次之,平均为20．83％,Zn,Cu元素的蛋白质结合态平均含量分别为18．19％和16．83％。     

U_(1-x)Pu_xO_2热膨胀性质分子动力学模拟研究

基于部分离子势函数的分子动力学方法,研究了U_(1-x)Pu_xO_2(x=0.07,0.15,0.25和0.5)在300—3000 K温度范围和0—1.5 GPa下的热力学性质,研究发现,在等压和不同温度下,随着钚(Pu)比率的增加,U_(1-x)Pu_xO_2的晶格常数线性减小,线性膨胀系数有所增大,等温压缩系数减小,通过拟合得到了零压下U_(1-x)Pu_xO_2晶格常数和线膨胀系数随Pu比率变化的经验表达式。     

TOUGHENING OF POLYCARBONATE WITH PBA-PMMA CORE-SHELL PARTICLES

The miscibility, mechanical properties, morphology and toughening mechanism of PC/PBA-PMMA blends were investigated. The dynamic mechanical results show that PC/PBA-PMMA blend has good miscibility and strong interfacial adhesion. The Izod impact strength of blend PC/PBA-PMMA with 4% (volume fraction) PBA-PMMA core-shell modifier is 16 times higher than that of pure PC. The core-shell volume fraction and thickness of the PMMA shell have effect on the toughness of PC/PBA-PMMA blends. As PMMA volume fraction increases, the toughness of PC/PBA-PMMA blend increases, and reaches a maximum value at 30% volume fraction of PMMA or so. The tensile properties of PC/PBA-PMMA blend with a minimum amount of PBA-PMMA modifier show that brittle-tough transition has no significant variance in comparison with that of pure PC. The scanning electron microscopic (SEM) observation indicates that the toughening mechanism of the blend with the pseudo-ductile matrix modified by small core-shell latex polymer particles is the synergetic effect of cavitation and shear yielding of the matrix.     

金纳米粒子自球形向棒状的转变和生长的光化学法研究

在含有HAuCl₄和十六烷基三甲基氯化铵(CTMAC)的DMF-H₂O-丙酮介质中, 以CTMAC形成的胶束为模板, 丙酮为光敏剂, 光化学还原法制备了不同长径比的棒状金纳米粒子. 通过改变DMF∶H₂O (V/V)的比例来改变溶液的极性, 增加胶束聚集数, 实现了自球形胶束向棒状的转变, 从而得到以金纳米棒占优势的金胶体溶液. 研究了HAuCl₄和CTMAC的浓度以及照射时间对金纳米棒生长的影响, 在最佳实验条件下, 获得了直径在20～22 nm, 长为0.5～3 μm的金纳米棒, 讨论了光化学反应和金纳米粒子在形成的棒状胶束中的自组装生长机理.     

使用SiNx原位淀积方法生长的GaN外延膜中的应力研究

采用低压MOCVD系统,在生长过程中使用SiNx原位淀积的方法产生纳米掩模,并在纳米掩模上进行选区生长和侧向外延制备了GaN外延薄膜.使用拉曼光谱和光荧光的手段对GaN外延膜中的残余应力进行了研究.研究发现,用SiNx原位淀积出纳米掩模后,GaN生长将由二维向三维转变,直到完全合并为止.利用拉曼光谱和光荧光谱分别研究了薄膜中的残余应力,两者符合得很好;这种方法生长出的GaN薄膜的应力分布较传统的侧向外延更加均匀;并且从中发现随着生长过程中SiNx原位淀积时间的增加,生长在其上的GaN外延膜中的残余应力减小.这是因为,随着SiNx原位淀积时间的增加,SiNx纳米掩模的覆盖度也增大.因此侧向外延区的比例增大,残余应力随之减小.