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为适应我国信息化建设需要,扩大作者学术交流渠道,本刊加入《中国学术期刊(光盘版)》和“中国期刊网”。作者著作权使用费与本刊稿酬一次性给付。如作者不同意将文章编入该数据库,请在来稿时声明,本刊将作适当处理。 为了实现科技期刊编辑、出版发行工作的电子化,推进科技信息交流的网络化进程,我刊现已入网“万方数据(ChinaInfo)系统科技期刊群”。所以,向本刊投稿并录用的稿件文章,将一律由编辑部统一纳入万方数据(ChinaInfo)系统,进行因特网提供信息服务。凡有不同意者,请在来稿时声明,本刊将作适当处理。本刊所付稿酬包含刊物内容上网服务报酬,不再另付。 《光谱实验室》编辑部 相似文献
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Using the molecular dynamics method, the stability of small He-vacancy clusters is studied under the condition of the high He and low vacancy densities. The result shows that there is a competition between He atoms detrapped and self-interstitial atoms (SIAs) emitted during the clustering of He atoms. When the He number is above a critical value of 9, the SIA emission is predominant. The SIA emission can result in deep capture of He atoms since the binding energy of He to a He-vacancy cluster is increased with the number of SIAs created. The cluster thus grows up. In addition, more SIAs are created when the temperature is elevated. The average volume of a He atom is increased. The cluster expansion takes place at high temperature. 相似文献
75.
InN and In0.46 Ca0.54N films are grown on sapphire with a CaN buffer by metalorganic chemical vapour deposition (MOCVD). Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveal that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 4 75 cm^2V^-1s^-1 and that oflno.46 Gao.54N is 163 cm^2 V^-1s^-1. Room-temperat ure photoluminescence measurement of the InN film shows a peak at 0.72eV, confirming that a high quality InN film is fabricated for applications to full spectrum solar cells. 相似文献
76.
SiO_2-TiO_2 sol-gel films are deposited on SiO_2/Si by dip-coating technique.The SiO_2-TiO_2 strips are fabricated by laser direct writing using an ytterbium fiber laser and followed by chemical etching.Surface structures,morphologies and roughness of the films and strips are characterized.The experimental results demonstrate that the SiO_2-TiO_2 sol-gel film is loose in structure and a shrinkage concave groove forms if the film is irradiated by laser beam.The surface roughness of both non-irradiated and laser irradiated areas increases with the chemical etching time.But the roughness of laser irradiated area increases more than that of non-irradiated area under the same etching time.After being etched for 28 s,the surface roughness value of the laser irradiated area increases from 0.3 nm to 3.1 nm. 相似文献
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We study the time evolution of electron wavepacket in the coupled two-dimensional(2D) lattices with mirror symmetry, utilizing the tight-binding Hamiltonian framework. We show analytically that the wavepacket of an electron initially located on one atomic layer in the coupled 2D square lattices exhibits a periodic oscillation in both the transverse and longitudinal directions. The frequency of this oscillation is determined by the strength of the interlayer hopping. Additionally, we provide nume... 相似文献
79.
A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector 下载免费PDF全文
We present a method to extend the operating wavelength of the interband transition quantum well photodetector from an extended short-wavelength infrared region to a middle-wavelength infrared region. In the modified In As Sb quantum well, Ga Sb is replaced with Al Sb/Al Ga Sb, the valence band of the barrier material is lowered, the first restricted energy level is higher than the valence band of the barrier material, the energy band structure forms type-II structure. The photocurrent spectrum manifest that the fabricated photodetector exhibits a response range from 1.9 μm to 3.2 μm with two peaks at 2.18 μm and 3.03 μm at 78 K. 相似文献
80.
采用水热法制备了具有二维层状结构的钙钒青铜(CaxV2O5·nH2O, CVO)水系锌离子电池钒基正极材料, 并通过调控前驱体溶液中碳纳米管的含量, 得到3种钙钒青铜/碳纳米管复合材料(CVO@CNTs). 利用X射线衍射、 热重分析、 扫描电子显微镜和透射电子显微镜等对材料进行了表征. 结果表明, 所制备的CVO呈纳米带形貌, 长约十几微米, 宽约几百纳米, 选区电子衍射测试表明所得材料为单晶结构. 循环伏安测试结果表明, CVO和CVO@CNTs均具有多个氧化还原峰, 储锌机制包括赝电容行为和电池行为. 在放电倍率1C(1C=300 mA/g)测试条件下, CVO纳米带比容量稳定在210.1 mA·h/g; 与CNTs复合后, CVO@CNTs复合材料的电荷转移阻抗降低, 在相同测试条件下表现出更高的比容量和优异的倍率性能. 其中, CVO@CNTs-40表现出最高的比容量, 在1C倍率测试条件下的比容量可达274.3 mA·h/g, 即使在20C的测试条件下放电比容量仍可达85.2 mA·h/g, 且循环1000次后容量保持率能达到92%. 相似文献