交叉分子束方法研究H+CH4和H+CD4反应:CH3/CD3的振动激发态产物通道

We study the H+CH₄/CD₄→H₂/HD+CH₃/CD₃ reactions using the time sliced velocity map ion imaging technique. Ion images of the CH₃/CD₃ products were measured by the (2+1) resonance enhanced multi-photon ionization (REMPI) detection method. Besides the CH₃/CD₃ products in the ground state, ion images of the vibrationally excited CH₃/CD₃ products were also observed at two collision energies of 0.72 and 1.06 eV. It is shown that the angular distribution of the products CH₃/CD₃ in vibrationally excited states gradually vary from backward scattering to sideways scattering as the collision energy increases. Compared to the CH₃/CD₃ products in the ground state, the CH₃/CD₃ products in vibrationally excited states tend to be more sideways scattered, indicating that larger impact parameters play a more important role in the vibrationally excited product channels.     

激光钝化对熔石英修复后损伤性能影响的实验研究

采用10.6 μupm 的 CO₂激光, 对单次激光脉冲辐照修复熔石英存在的烧蚀采用大光斑钝化去除. 经过辐照修复的区域置于前表面测试初始损伤阈值, 结果表明调制造成的损伤得到了一定程度的抑制; 辐照区域置于后表面修复后 熔石英的初始损伤阈值超过了基底的初始损伤阈值. 实验观察到了应力分布外扩, 同时明显减弱. 对损伤增长的测试说明, 经过激光熔融辐照后的损伤点, 当应力释放以后, 损伤扩展初期表现出指数增长趋势, 后期随着辐照次数的增加, 损伤增长不再明显, 并且趋于恒定值.     

钚气溶胶环境中惰性气体氪迁移过程研究

放射性气体的安全性问题是涉及反应堆运行中必需研究的重要问题.因此在钚气溶胶环境中,对钚材料裂变产生的放射性气体裂变产物,需要研究其在钚气溶胶环境中的迁移过程.对放射性惰性气体Kr87,Kr88的实验测量数据进行了具体分析.依据它们具有钚材料直接裂变和作为固体裂变产物子体两种来源这一物理特性,在不同的制样时间对Kr87/Kr88比值变化规律进行分析.确立了这两种来源的在钚气溶胶环境中的物理图像和迁移过程的物理模型,并与实验数据进行比较以验证模型的正确性. 关键词： 钚气溶胶 气体裂变产物 放射性Kr87/Kr88 迁移过程     

大气对流边界层光传输的实验室模拟

利用湍流池模拟大气对流边界层的光传输,同时测量了到达角起伏和光路上的温度脉动。结果表明,在混合层的上部,对数温度谱偏陡,和大气中的观测结果一致,到达角起伏谱也偏陡,但到达角起伏谱曲线反映了湍流在小尺度范围内具有各向同性的特征,此时利用温度脉动方法得到的折射率结构常数小。当边界层顶部逆温层消失,发展为完全对流状态时,温度谱幂率等于“－5／3”,到达角起伏谱害虫率等于“－8／3”,两种方法测量得到的折射率结构常数一致。     

熔石英后表面坑点型划痕对光场调制的近场模拟

建立了坑点型划痕的旋转抛物面模型, 用三维时域有限差分方法研究了熔石英后表面坑点型划痕随深度、 宽度、 间距以及酸蚀量变化对波长λ =355 nm入射激光的调制.研究表明, 这类划痕调制最强区位于相邻两坑点的连接区, 且越靠近表面调制越强.当其宽深比为2.0---3.5、 坑点间距约为坑点宽度的1/2时, 可获得最大光场调制, 最大光强增强因子(LIEF)为11.53; 当坑点间距大于坑点宽度时, 其调制大为减弱, 相当于单坑的场调制.对宽为60δ (δ =λ/12), 深和间距均为30δ的坑点型划痕进行刻蚀模拟, 刻蚀过程中最大LIEF为11.0, 当间距小于300 nm时, 相邻坑点由于衍射形成场贯通.     

Two localized CO2 laser treatment methods for mitigation of UV damage growth in fused silica

Two methods：high-power,short-time,single-shot irradiation（Method A） and low-power,long-time,multi-shot irradiation（Method B） are investigated to mitigate the UV damage growth in fused silica by using a 10.6-μm CO2 laser.To verify the mitigation effect of the two methods,the laser induced damage thresholds（LIDTs） of the mitigated sites are tested with a 355-nm,6.4-ns Nd：YAG laser,and the light modulation of the mitigation sites are tested with a 351-nm continuous Nd：YLF laser.The mitigated damaged sites treated with the two methods have almost the same LIDTs,which can recover to the level of pristine material.Compared with Method A,Method B produces mitigated sites with low crater depth and weak light modulation.In addition,there is no raised rim or re-deposited debris formed around the crater edge for Method B.Theoretical calculation is utilized to evaluate the central temperature of the CO2 laser beam irradiated zone and the radius of the crater.It is indicated that the calculated results are consistent with the experimental results.     

横向划痕对光场调制的近场模拟

熔石英亚表面划痕对入射激光的近场调制是导致光学元件低阈值损伤的主要因素之一. 用三维时域有限差分方法研究了连续横向划痕的近场分布, 对比了尖锐截面与光滑截面场调制的差异, 着重探讨了光场调制与划痕宽深比R的关系. 研究表明: 酸蚀后的光滑截面有助于减弱近场调制, 这类划痕的R>10.0时调制较弱且相互接近, R<5.0时调制显著增强. 当R取1---3时, 亚表面的调制达最大值, 最大电场幅值为入射波幅值的4.3倍. 当R取1.0---3.5时, 缺陷附近有80%以上取样点的最大电场幅值超过入射波幅值的2倍. 随着深度的增大, 强场区具有明显的"趋肤效应": 位于划痕正下方的强场区首先往左右两侧移动, 然后移向抛物口界面以及水平界面, 同时衍生出的多条增强线诱导整个亚表面层的光场增强.     

NEUTRON-POWDER-DIFFRACTION STUDY OF THE STRUCTURE AND MAGNETIC PROPERTIES OF Nd2Fe14Si3

The crystal and magnetic structures of Nd₂Fe₁₄Si₃ at room temperature were refined by Rietveld analysis of neutron-powder-diffraction data. It was found that silicon atoms occupy preferentially both 18h and 18f of Th₂Zn₁₇-type structure with occupancies 0.36 and 0.14, respectively, The Fe-Fe bond-lengths computed with the refined crystallographic parameters have optimum values, as compared with those of Nd₂Fe₁₇ compounds, which can explain well why the Curie temperature rises strongly when the unit cell volume reduces with the substitution of silicon for iron in Nd₂Fe₁₇.     

从极优基未必能迅达最优基：兼与文献[1]作者商榷

本对献[1]提出的“求解线性规划的快速换基迭代法”从多阶段决策的观点阐述并举证了从极优基未必能快速到达最优基的论断。旨在说明用此方法求解一般线性规划问题时不一定能实现快速换基迭代的概念。     

Structure Characterization of HSQ Films for Low Dielectrics Using D5 as Sacrificial Porous Materials

Low-density materials, commercially available hydrogensilsesquioxane （HSQ） offer a low dielectric constant. HSQ films can be obtained by spin on deposition （SOD）. In this work, low-dielectric-constant HSQ films are prepared by using D5 （decamethylcyclopentasiloxane） as sacrificiaJ porous materials. The dielectric constant of silica films significantly changes from 3.0 to 2.4. We report the structural aspects of the films in relation to their composition after annealed at 300℃, 400℃, and 500℃ for 1.5h in nitrogen ambient and annealed at 400℃ for 1.5h in vacuum. Si-OH appears after annealed at 400℃ for 1.5h in vacuum. The results indicate that the proper condition is in nitrogen ambient. Intensity of the Sill peak increases with the increasing temperature. Fourier transform infrared spectroscopy is used to identify the network structure and cage structure of Si-O-Si bonds and other possible bonds. Dielectric constant k is significantly lowered by annealing at 350℃ for 1.5h in nitrogen ambient. The I-V and C-V measurements are used to determine the dielectric constant, the electric resistivity and the breakdown electric field.