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11.
InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm
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In this paper, we have demonstrated a high performance waveguide photodiode integrated diluted waveguide serving as a fibre-to-waveguide coupler to achieve high coupling efficiency. High responsivity (> 1 A/W), high saturation power (> 45 mA) in the static state and extremely low dark current density (0.04 pA/μm2) with 3 dB bandwidth at 13.4 GHz have been achieved. 相似文献
12.
Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature
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Well-aligned and closely-packed silicon nanopillar (SNP) arrays are fabricated by using a simple method with magnetron sputtering of Si on a porous anodic alumina (PAA) template at room temperature. The SNPs are formed by selective growth on the top of the PAA pore walls. The growth mechanism analysis indicates that the structure of the SNPs can be modulated by the pore spacing of the PAA and the sputtering process and is independent of the wall width of the PAA. Moreover, nanocrystals are identified by using transmission electron microscopy in the as-deposited SNP samples, which are related to the heat isolation structure of the SNPs. The Raman focus depth profile reveals a high crystallization ratio on the surface. 相似文献
13.
Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature
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Tensile-strained Ge/SiGe multiple quantum wells(MQWs) were grown on a Ge-on-Si virtual substrate using ultrahigh vacuum chemical vapor deposition on an n+-Si(001) substrate. Direct-bandgap electroluminescence from the MQWs light emitting diode was observed at room temperature. The quantum confinement effect of the direct-bandgap transitions is in good agreement with the theoretical calculated results. The redshift mechanism of emission wavelength related to the thermal effect is discussed. 相似文献
14.
在Si (001)衬底上, 以高质量的弛豫Ge薄膜作为缓冲层, 先后生长Sn组分x分别为2.5%, 5.2%和7.8%的完全应变的三层Ge1-xSnx合金薄膜. 在Si (001)衬底上直接生长了x分别为0.005, 0.016, 0.044, 0.070和0.155的五个弛豫Ge1-xSnx样品. 通过卢瑟福背散射谱、高分辨X射线衍射和X射线倒易空间图等方法测量了Ge1-xSnx合金的组分 与晶格常数. 实验得到的晶格常数相对Vegard定律具有较大的正偏离, 弯曲系数b=0.211 Å. 相似文献
15.
Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon
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Strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells were grown on an Si0.1Ge0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n +-Si(001) substrate.Photoluminescence measurements were performed at room temperature,and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed,which is in good agreement with the calculated results.The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum. 相似文献
16.
Ge1-xSnx是一种新型IV族合金材料, 在光子学和微电子学器件研制中具有重要应用前景. 本文使用低温分子束外延(MBE)法, 在Ge(001)衬底上生长高质量的Ge1-xSnx合金, 组分x分别为1.5%, 2.4%, 2.8%, 5.3%和14%, 采用高分辨X射线衍射(HR-XRD)、卢瑟福背散射谱(RBS) 和透射电子显微镜(TEM)等方法表征Ge1-xSnx合金的材料质量. 对于低Sn组分(x≤ 5.3%)的样品, Ge1-xSnx合金的晶体质量非常好, RBS的沟道/随机产额比(χmin)只有5.0%, HR-XRD曲线中Ge1-xSnx衍射峰的半高全宽(FWHM)仅100' 左右. 对于x=14%的样品, Ge1-xSnx合金的晶体质量相对差一些, FWHM=264.6'.
关键词:
锗锡合金
锗
分子束外延 相似文献
17.
Waveguide-integrated Ge/Si heterostructure avalanche photodetectors(APDs) were designed and fabricated using a CMOS-compatible process on 8-inch SOI substrate. The structure of the APD was designed as separate-absorption-chargemultiplication(SACM) using germanium and silicon as absorption region and multiplication region, respectively. The breakdown voltage(V_b) of such a device is 19 V at reverse bias and dark current appears to be 0.71 μA at 90% of the V_b. The device with a 10-μm length and 7-μm width of Ge layer shows a maximum 3-dB bandwidth of 17.8 GHz at the wavelength of 1550 nm. For the device with a 30-μm-length Ge region, gain-bandwidth product achieves 325 GHz. 相似文献
18.
Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material
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The intermediate band (IB) solar cell is a promising third-generation solar cell that could possibly achieve very high efficiency above the Shockley-Queisser limit. One of the promising ways to synthesize IB material is to introduce heavily doped deep level impurities in conventional semiconductors. High-doped Ti with a concentration of 1020 cm-3-1021 cm-3 in the p-type top Si layer of silicon-on-insulator (SOI) substrate is obtained by ion implantation and rapid thermal annealing (RTA). Secondary ion mass spectrometry measurements confirm that the Ti concentration exceeds the theoretical Mott limit, the main requirement for the formation of an impurity intermediate band. Increased absorption is observed in the infrared (IR) region by Fourier transform infrared spectroscopy (FTIR) technology. By using a lateral p-i-n structure, an obvious infrared response in a range of 1100 nm-2000 nm is achieved in a heavily Ti-doped SOI substrate, suggesting that the improvement on IR photoresponse is a result of increased absorption in the IR. The experimental results indicate that heavily Ti-implanted Si can be used as a potential kind of intermediate-band photovoltaic material to utilize the infrared photons of the solar spectrum. 相似文献
19.
Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition
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The Si epitaxial films are grown on Si (100) substrates using pure Si2H6 as a gas source using ultrahigh vacuum chemical vapour deposition technology. The values of growth temperature Tg are 650 ℃, 700 ℃, 730 ℃, 750 ℃, and 800 ℃. Growth mode changes from island mode to step-flow mode with Tg increasing from 650 ℃ to 700 ℃. Rippled surface morphologies are observed at Tg = 700 ℃, 730 ℃, and 800 ℃, but disappear when Tg = 750 ℃. A model is presented to explain the formation and the disappearance of the ripples by considering the stability of the step-flow growth. 相似文献
20.
High quality Ge was epitaxially grown on Si using ultrahigh
vacuum/chemical vapor deposition (UHV/CVD). This paper demonstrates
efficient germanium-on-silicon p-i-n photodetectors with 0.8~μm
Ge, with responsivities as high as 0.38 and 0.21~A/W at 1.31 and
1.55~μ m, respectively. The dark current density is
0.37~mA/cm2 and 29.4~mA/cm2 at 0~V and a reverse bias of
0.5~V. The detector with a diameter of 30~μ m, a
3~dB-bandwidth of 4.72~GHz at an incident wavelength of 1550~nm and
zero external bias has been measured. At a reverse bias of 3~V, the
bandwidth is 6.28~GHz. 相似文献