排序方式: 共有61条查询结果,搜索用时 15 毫秒
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LB技术制备FePt纳米粒子单层膜 总被引:5,自引:1,他引:4
FePt纳米粒子由于具有高的矫顽力而成为高密度垂直磁记录材料的研究热点之一,均匀有序排布的FePt纳米粒子薄膜将有利于提高磁记录介质的记录密度,因此,如何使FePt纳米颗粒均匀有序地排布是当前需要解决的关键问题之一,很多研究小组利用磁控溅射、自组装和电沉积等方法对FePt纳米颗粒的均匀分布进行了详细的研究, 相似文献
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通过反应溅射的方法,制备了N掺杂的Ge2Sb2Te5(N-GST)薄膜,用作相变存储器的存储介质.研究表明,掺杂的N以GeN的形式存在,不仅束缚了Ge2Sb2Te5 (GST)晶粒的长大也提高了GST的晶化温度和相变温度.利用N-GST薄膜的非晶态、晶态面心立方相和晶态六方相的电阻率差异,能够在同一存储单元中存储三个状态,实现相变存储器的多态存储功能.
关键词:
相变存储器
多态存储
N掺杂
2Sb2Te5')" href="#">Ge2Sb2Te5 相似文献
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A novel MEMS variable optical attenuator (VOA), which has completely different attenuation mechanism from those in literatures, is proposed and demonstrated in this paper. The basic operation principle is that the optical power coupled between two initially aligned single-mode fibers will be continuously attenuated while the end of one of the fibers is deflected from the initial position. A micromachined solenoid type inductor with a U-shaped permalloy magnetic core is used to attract the deflectable fiber that has a permalloy coat on its end. To fabricate the multi-layer three-dimensional inductive component, a new UV-LIGA process for thick photoresists is developed, combining advantages of both SU-8 and AZ-4000 series photoresists. The inductive component is approximately 1.7 mm×1.3 mm×50μm in size and has a low resistance value (- 2.1Ω). The whole size of the VOA before packaging is 30 mmx2 mmx0.6 mm. The first prototype shows less then 3-dB insertion loss at 0-dB attenuation and nearly 40-dB att 相似文献
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本文以金纳米棒作为信号感应载体,在pH9.4弱碱性条件下通过维生素C还原AgNO3从而在金纳米棒表面形成包裹层,进而改变金纳米棒的等离子体共振吸收位移,据此建立了一种快速、简单、灵敏的维生素C的等离子体共振吸收位移测定法.方法的线性范围为0.25~10.0μmol/L,检出限(3σ)为0.12mol/L.该方法成功用于维生素C片剂分析,加标回收率95.4%~106.0%.与药典方法进行对比,有满意的精密度和准确度. 相似文献
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在CuCl2和KI同时存在下,银纳米颗粒表面被氧化,生成Ag@AgI复合纳米颗粒,使得银纳米颗粒在410 nm处的等离子体共振光散射信号降低.该光散射信号变化很容易在普通白色发光二极管(LED)光照射下观察到,据此建立了一种简单的I-可视化分析方法.在pH 7.4 Tris-HCl缓冲溶液中,在1.0×10-4 mol/LCuCl2溶液存在下,I-检测的线性范围为2.0× 10-7~2.0× 10-5mol/L,相关系数为0.9959.常见阴离子对测定无干扰.将本方法用于环境水样和尿液中I-检测,加标回收率分别为95.0%~97.0%和98.7%~103.1%. 相似文献
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树脂吸附法处理对氨基苯酚生产废水的研究 总被引:18,自引:1,他引:18
本文选用CHA-111吸附树脂对对氨基苯酚生产过程中的含酚废水进行了处理和回收,研究了树脂种类、吸附流速和脱附剂的类型、浓度、流速、温度等对CHA-111树脂的吸附、脱附性能的影响,并回收对氨基苯酚取得了满意的效果。 相似文献
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Improvement of Electrical Properties of the Ge2Sb2Te5 Film by Doping Si for Phase-Change Random Access Memory 总被引:1,自引:0,他引:1
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Si-doped Ge2Sb2Te5 films have been prepared by dc magnetron co-sputtering with Ge2Sb2Te5 and Si targets. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phasetransition temperature from face-centred-cubic (fcc) phase to hexagonal (hex) phase. The resistivity of the Ge2Sb2Te5 film shows a significant increase with the Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460℃ annealing increases from 1 to 11 mΩ.cm and dynamic resistance increase from 64 to 99Ω compared to the undoped Ge2Sb2Te5 film. This is very helpful to writing current reduction of phase-change random access memory. 相似文献