ZnTe（ZnTe：Cu）多晶薄膜的XPS研究

用共蒸发法在室温下制备了ZnTe及ZnTe：Cu多晶薄膜，测量了电导率温度曲线，发现不掺杂的ZnTe薄膜的暗电导随温度的增加而线形增加，呈常规的半导体材料特征；掺Cu的ZnTe薄膜在温度较低时，lnσ随温度升高而缓慢增加，随后缓慢降低，达到一极小值，当温度继续升高时又陡然增加，呈现异常现象。用XPS研究了N2气氛下退火前后表面状态，发现不掺Cu的ZnTe薄膜呈现富Te现象。掺Cu后Te氧化明显，以ZnTe形式存在的Te明显减少；ZnTe：Cu薄膜中Zn的含量在退火前后变化明显，退火前，Zn主要以ZnTe形式存在，退火后Zn原子向表面扩散，使表面成分更加均匀，谱峰变宽；退火时，部分Cu原子进入晶格形成CuxTe相，引起载流子浓度变化，导致ZnTe：Cu多晶薄膜的电导温度关系异常。     

Charge state distribution analysis of Al and Pb ions from thelaser ion source at IMP

A prototype laser ion source that could demonstrate the possibility of producing intense pulsed high charge state ion beams has been established with a commercial Nd:YAG laser (E_max=3 J,1064 nm,8-10 ns) to produce laser plasma for the research of Laser Ion Source (LIS). At the laser ion source test bench,high purity (99.998%) aluminum and lead targets have been tested for laser plasma experiment. An Electrostatic Ion Analyzer (EIA) and Electron Multiply Tube (EMT) detector were used to analyze the charge state and energy distribution of the ions produced by the laser ion source. The maximum charge states of Al¹²⁺ and Pb⁷⁺ were achieved. The results will be presented and discussed in this paper.     

氢硼聚变三体级联衰变连续能谱的Monte-Carlo模拟与分析

¹¹B(p,α1)⁸Be^*(1)(2α)三体级联衰变中居间核8Be⁽¹⁾衰变成两个α粒子的连续能谱呈马鞍形分布.编写了模拟三体级联衰变连续能谱的Monte-Carlo程序,计算结果表明:沿居间核8Be⁽¹⁾运动方向α发射强度增强的各向异性分布,能较好地解释实验结果,揭示p+¹¹B核反应中⁸Be⁽¹⁾核α衰变各向异性发射.     

Charge ordering modulations in a Bi_0.4Ca_0.6MnO₃ film with a thickness of 110 nm

The low temperature sample stage in a transmission electron microscope is used to investigate the charge ordering behaviours in a Bi 0.4 Ca 0.6 MnO 3 film with a thickness of 110 nm at 103 K.Six different types of superlattice structures are observed using the selected-area electron diffraction(SAED) technique,while three of them match well with the modulation stripes in high-resolution transmission electron microscopy(HRTEM) images.It is found that the modulation periodicity and direction are completely different in the region close to the Bi 0.4 Ca 0.6 MnO 3 /SrTiO 3 interface from those in the region a little further from the Bi 0.4 Ca 0.6 MnO 3 /SrTiO 3 interface,and the possible reasons for this are discussed.Based on the experimental results,structural models are proposed for these localized modulated structures.     

Smale横截同宿定理的推广与Lozi映射的混沌现象

该文首先将平面上的λ入引理及Ｓｍａｌｅ横截同宿定理推广到映射力局部不可微的情形，进而讨论了Ｌｏｚｉ映射的混沌现象，得到了一组保证该映射产生混沌的充分条件，详见图５．     

飞行管理问题的实时算法

本文讨论了在一定区域空间内进行飞行管理避免飞机相撞的模型，提出了直接搜索法和非线性规划（SUMT）法两种解法，并将两种方法有机结合，得出的算法在486微机上计算时间小于10秒，误差不超过0.01度，完全符合问题的要求。本文接着给出四种不同情况分别用两种方法求解，进行比较检验，取得很好的吻合，充分说明了模型3的可靠性。本文还对模型的误差进行分析并对模型进行推广。     

无衍射特殊光束的产生与三维表征

无衍射光束(如贝塞尔光束、艾里光束)因具有无衍射、自愈合的特性, 在很多领域都有广泛的应用. 本文提出使用纯相位型空间光调制器对光场的复振幅进行调控, 从而可以产生多种复杂模式的无衍射光束, 如强度可独立调控的多个零阶贝塞尔光束, 两个高阶贝塞尔光束干涉生成的花瓣状无衍射光束, 具有多个主瓣的加速光束等特殊的无衍射光束. 通过在待测焦场附近放置一个平面反射镜, 使其沿光轴快速扫描光场, 并由数字相机同步拍摄反射回来的一系列二维光场强度分布信息, 可实现对无衍射光束三维光场强度分布的快速测量和表征. 本实验方法和技术可以快速产生各种复杂的特殊光场并获得其精确的三维可视化重建效果, 在光学显微、光学俘获、光学微加工等领域有潜在的应用价值.     

Edge assisted epitaxy of CsPbBr3 nanoplates on Bi2O2Se nanosheets for enhanced photoresponse

Bi$_{2}$O$_{2}$Se has been proved to be a promising candidate for electronic and optoelectronic devices due to their unique physical properties. However, it is still a great challenge to construct the heterostructures with direct epitaxy of hetero semiconductor materials on Bi$_{2}$O$_{2}$Se nanosheets. Here, a two-step chemical vapor deposition (CVD) route was used to directly grow the CsPbBr$_{3}$ nanoplate-Bi$_{2}$O$_{2}$Se nanosheet heterostructures. The CsPbBr$_{3}$ nanoplates were selectively grown on the Bi$_{2}$O$_{2}$Se nanosheet along the edges, where the dangling bonds provide the nucleation sites. The epitaxial relationships between CsPbBr$_{3}$ and Bi$_{2}$O$_{2}$Se were determined as ${[200]}_{\rm Bi_{2}O_{2}Se}||{[110]}_{\rm CsPbBr_{3}}$ and ${[110]}_{\rm Bi_{2}O_{2}Se}||{[200]}_{\rm CsPbBr_{3}}$ by transmission electron microscopy characterization. The photoluminescence (PL) results reveal that the formation of heterostructures results in the remarkable PL quenching due to the type-I band arrangement at CsPbBr$_{3}$/Bi$_{2}$O$_{2}$Se interface, which was confirmed by ultraviolet photoelectron spectroscopy (UPS) and Kelvin probe measurements, and makes the photogenerated carriers transfer from CsPbBr$_{3}$ to Bi$_{2}$O$_{2}$Se. Importantly, the photodetectors based on the heterostructures exhibit a 4-time increase in the responsivity compared to those based on the pristine Bi$_{2}$O$_{2}$Se sheets, and the fast rise and decay time in microsecond. These results indicate that the direct epitaxy of the CsPbBr$_{3}$ plates on the Bi$_{2}$O$_{2}$Se sheet may improve the optoelectronic performance of Bi$_{2}$O$_{2}$Se based devices.     

高能多粒子产生:实验综述

本文综述了欧洲核子研究中心P(?)对撞机上多粒子产生的性质、实验数据以及截面、多重数分布、赝快度分布、横动量分布、关联、粒子产额和衍射分解等。     

差动光程差倍增法测量微小位移

基于差动光程差倍增法将微小位移转化为多倍光程差,通过电桥光电转换电路,得到干涉条纹数的变化.采用差动干涉方法,提高了光程改变量与位移量的比例,使微小位移的测量精度提高到亚微米量级.